Substrate processing apparatus, substrate processing system, and substrate processing method

ABSTRACT

An object of the present invention is to improve a substrate processing apparatus using the CARE method. The present invention provides a substrate processing apparatus for polishing a processing target region of a substrate by bringing the substrate and a catalyst into contact with each other in the presence of processing liquid. The substrate processing apparatus includes a substrate holding unit configured to hold the substrate, a catalyst holding unit configured to hold the catalyst, and a driving unit configured to move the substrate holding unit and the catalyst holding unit relative to each other with the processing target region of the substrate and the catalyst kept in contact with each other. The catalyst is smaller than the substrate.

TECHNICAL FIELD

The present invention relates to a technique for polishing a substrate.

BACKGROUND ART

There is known a chemical mechanical polishing (CMP, Chemical MechanicalPolishing) apparatus that polishes a surface of a substrate when asemiconductor device is manufactured. The CMP apparatus includes apolishing pad attached on a top surface of a polishing table, therebyforming a polishing surface. In this CMP apparatus, a polishing targetsurface of the substrate held by a top ring is pressed against thepolishing surface, and the polishing table and the top ring rotateswhile supplying slurry as polishing liquid to the polishing surface. Asa result, the polishing surface and the polishing target surface areslidably moved relative to each other, by which the polishing targetsurface is polished.

In recent years, the planarization technique including the CMP has beenfacing expansion of a variety of possible polishing target materials,and also has been subject to requirements that has been becomingincreasingly stricter with respect to a polishing capability thereof(for example, flatness, a damage incurred from the polishing, andfurther, productivity). Under such circumstances, new planarizationmethods also have been proposed, and one of them is catalyst referredetching (Catalyst Referred Etching: hereinafter referred to as CARE).According to the CARE method, reactive species are produced fromprocessing liquid that reacts with the polishing target surface onlyaround a catalyst material in the presence of the processing liquid.Then, bringing the catalyst material and the polishing target surfaceinto proximity to or contact with each other allows an etching reactionto selectively occur on the polishing subject surface on a surfacelocated in proximity to or in contact with the catalyst material. Forexample, for a rough polishing target surface, bringing protrusions andthe catalyst material into proximity to or contact with each otherallows the protrusions to be selectively etched, thereby succeeding inthe planarization of the polishing subject surface. Originally, thisCARE method has been proposed for the purpose of planarizingnext-generation substrate materials that used to be difficult to behighly efficiently planarized by the CMP due to their chemicalstability, such as Sic and GaN (for example, the following patentliteratures, PTL 1 to PTL 4). However, in recent years, the CARE methodhas been confirmed to be also usable to process a silicon dioxide filmand the like, and has opened a possibility of being able to be employedeven for a currently prevailing silicon substrate material (for example,the following patent literature, PTL 5).

CITATION LIST Patent Literature

PTL 1: Japanese Patent Application Public Disclosure No. 2008-121099

PTL 2: Japanese Patent Application Public Disclosure No. 2008-136983

PTL 3: Japanese Patent Application Public Disclosure No. 2008-166709

PTL 4: Japanese Patent Application Public Disclosure No. 2009-117782

PTL 5: International Publication No. WO/2013/084934

SUMMARY OF INVENTION Technical Problem

However, this CARE method is required to satisfy a similar processingcapability to the CMP (the chemical mechanical polishing), which hasbeen a representative method for this process until now, to be permittedto be employed for the planarization of a semiconductor material on thesilicon substrate. Especially, in terms of an etching rate and anetching amount, the CARE method is required to be able to maintainevenness on a wafer level and a chip level. Further, the same applies tothe planarization capability, and these requirements are getting furtherstricter as the process generation advances. Further, the normallypracticed process for planarizing the semiconductor material on thesilicon substrate often involves simultaneous removal and planarizationof a plurality of materials, and a substrate processing apparatus usingthe CARE method is required to support similar processing.

Solution to Problem

The present invention has been made to solve at least a part of theabove-described problems, and can be embodied according to the followingaspects.

A first aspect of the present invention provides a substrate processingapparatus for processing a processing target region (a semiconductormaterial) on a substrate by bringing the substrate and a catalyst intocontact with each other in the presence of processing liquid. Thissubstrate processing apparatus includes a substrate holding unitconfigured to hold the substrate, a catalyst holding unit configured tohold the catalyst, and a driving unit configured to move the substrateholding unit and the catalyst holding unit relative to each other withthe processing target region on the substrate and the catalyst kept incontact with each other. The catalyst holding unit includes an elasticmember for holding the catalyst. According to this aspect, when theprocessing target region on the substrate and the catalyst are broughtinto contact with each other, the elastic member is deformed, whichallows the catalyst to evenly contact the substrate in conformity withthe shape of the substrate (warpage and the like of the substrate),thereby allowing a uniform etching rate within the contact area.

According to a second aspect of the present invention, in the firstaspect, the elastic member includes a structure having a pressurechamber formed by an elastic film. A layer of the catalyst is formed onan outer surface of the elastic film. The pressure chamber is configuredto control a contact pressure between the processing target region ofthe substrate and the catalyst by control of a pressure of fluidsupplied into this pressure chamber. According to this aspect, thecatalyst can evenly contact the substrate, thereby allowing uniformetching rate within the contact area.

According to a third aspect of the present invention, in the firstaspect, the elastic member includes a spherical body held in such amanner that, when the substrate holding unit and the catalyst holdingunit are moved relative to each other, the spherical body is rotatableaccording to this relative movement. A layer of the catalyst is formedon an outer surface of the spherical body. According to this aspect,when the processing target region on the substrate and the catalyst arebrought into contact with each other, the elastic member is deformed,which allows the catalyst to evenly contact the substrate in conformitywith the shape of the substrate (the warpage and the like of thesubstrate), thereby allowing uniform etching rate within the contactarea.

According to a fourth aspect of the present invention, in the thirdaspect, the substrate processing apparatus further includes a pressureadjustment unit configured to adjust the contact pressure between theprocessing target region on the substrate and the catalyst by adjustinga force pressing the spherical body toward a substrate side where thesubstrate is located. According to this aspect, adjusting the pressurewith which the processing target region on the substrate and thecatalyst are in contact with each other allows the catalyst to evenlycontact the substrate in conformity with the shape of the substrate (thewarpage and the like of the substrate), thereby allowing uniformretching rate within the contact area.

According to a fifth aspect of the present invention, in the firstaspect, the elastic member includes a sponge having a cavity. Accordingto this aspect, the elastic member is deformed, which allows thecatalyst to evenly contact the substrate in conformity with the shape ofthe substrate (the warpage and the like of the substrate), therebyallowing uniform etching rate within the contact area. Further, thesponge is flexible, which contributes to prevention or a reduction ofdamage that otherwise might be inflicted to the semiconductor material,which is the processing target surface, due to friction.

According to a sixth aspect of the present invention, in the fifthaspect, the substrate processing apparatus includes a processing liquidsupply unit configured to supply the processing liquid into the sponge.A layer that is a layer of the catalyst and has a pore is formed on anouter surface of the sponge. According to this aspect, the processingliquid can be supplied from inside the sponge, where the processingliquid can easily flow, to the contact portion between the polishingtarget surface of the substrate and the catalyst. In other words, theprocessing liquid can be supplied directly to the contact portion onlyby a necessary amount, which can lead to a reduction in a use amount ofthe processing liquid.

According to a seventh aspect of the present invention, in any of thefirst to sixth aspects, a plurality of grooves is formed on the elasticmember, and the catalyst is embedded in each of the plurality ofgrooves. According to this aspect, the catalysts can be arranged in aspecific distribution on the contact surface between the elastic memberand the processing target region on the substrate, which allowsadjustment of etching amount at the portion in contact with thecatalysts.

According to an eighth aspect of the present invention, in any of thefirst to seventh aspects, a plurality of grooves for transferring theprocessing liquid is formed on the elastic member. According to thisaspect, these grooves facilitate introduction of the processing liquidonto the contact portion between the catalyst and the processing targetregion on the substrate, and substitution thereon, thereby allowing thesubstrate to be etched at a higher etching rate and with improvedstability.

According to a ninth aspect of the present invention, in any of thefirst to eighth aspects, the elastic member includes a plurality ofelastic members. Each of the plurality of elastic members individuallyholds the catalyst. According to this aspect, the catalyst can furthereasily follow the shape of the substrate. Further, when being combinedwith the second aspect, the ninth aspect allows an etching status to becontrolled for each region, thereby allowing the contact portion to beetched with more uniform etching rate.

According to a tenth aspect of the present invention, in any of thefirst to ninth aspects, the catalyst includes two or more kinds ofindividual catalysts, or is a mixture or a compound containing two kindsof catalysts. According to this aspect, if the processing target surfaceis constituted by a plurality of materials, suitable catalysts for eachmaterials are disposed in the form of the individual catalysts, themixture, or the compound, which allows these materials to be etched atthe same time with the aid of the individual catalysts.

According to an eleventh aspect of the present invention, in any of thefirst to tenth aspects, the catalyst holding unit includes a pluralityof catalyst holding units, and the catalyst holding units individuallyholds the catalyst. According to this aspect, the plurality of catalystholding units is used at the same time, which can improve a processingcapability per unit time.

According to a twelfth aspect of the present invention, in the eleventhaspect, at least two of catalyst holding units, among the plurality ofcatalyst holding units, hold different kinds of catalysts from eachother. According to this aspect, even if the processing target surfaceis constituted by the plurality of materials, the materials can beetched at the same time. And furthermore the simultaneous use of theplurality of catalyst holding units can improve the processingcapability per unit time.

According to a thirteenth aspect of the present invention, in any of thefirst to twelfth aspects, the substrate processing apparatus includes asubstrate temperature control unit configured to control a temperatureof the substrate. According to this aspect, the etching rate can bechanged by changing the temperature, and thus becomes adjustable.

According to a fourteenth aspect of the present invention, in any of thefirst to thirteenth aspects, the substrate holding unit includes asubstrate position adjustment unit configured to rotate the substrate byan arbitrary predetermined angle so that a notch, an orientation flat,or a laser marker of the substrate is located at a predeterminedposition. According to this aspect, the catalyst can be brought intocontact with a desired portion of the substrate.

According to a fifteenth aspect of the present invention, in any of thefirst to fourteenth aspects, the substrate processing apparatus furtherincludes a processing liquid temperature adjustment unit configured toadjust a temperature of the processing liquid to a predeterminedtemperature within a range of 10 degrees to 60 degrees, inclusive.According to this aspect, the etching rate can be changed by changingthe temperature, and thus becomes adjustable.

According to a sixteenth aspect of the present invention, in any of thefirst to fifteenth aspects, the substrate processing apparatus includesa processing liquid supply unit including a supply port for supplyingthe processing liquid onto the processing target region of thesubstrate. The processing liquid supply unit is configured in such amanner that the supply port is movable together with the catalystholding unit. According to this aspect, fresh processing liquid can bealways supplied to around the catalyst, resulting in a reduction invariation of the etching rate due to a change in concentration of theprocessing liquid. Further, the processing liquid can be efficientlysupplied onto the processing target region on the substrate, resultingin a reduction in the use amount of the processing liquid.

According to a seventeenth aspect of the present invention, in any ofthe first to sixteenth aspects, the catalyst holding unit is disposedabove the substrate holding unit. The substrate holding unit includes awall extending vertically upwardly throughout an entire circumferentialdirection outside a region for holding the substrate. According to thisaspect, the processing liquid can be held inside the wall portion, whichcan prevent or reduce an outward leak of the processing liquid. As aresult, the use amount of the processing liquid can be reduced.

According to an eighteenth aspect of the present invention, in any ofthe first to seventeenth aspects, the substrate processing apparatusincludes a processing liquid holding unit surrounding the catalystholding unit and open on a substrate side that faces the substrate. Theprocessing liquid holding unit is configured to hold the processingliquid in this processing liquid holding unit. The processing liquid issupplied into the processing liquid holding unit. According to thisaspect, most of the supplied processing liquid is held inside theprocessing liquid holding unit, which contributes to the reduction inthe use amount of the processing liquid.

According to a nineteenth aspect of the present invention, in any of thefirst to eighteenth aspects, the substrate processing apparatus includesa processing liquid suction unit in communication with the inside of theprocessing liquid holding unit. The processing liquid suction unit isconfigured to suck the processing liquid held in the processing liquidholding unit. According to this aspect, the processing liquid iscirculated, so that fresh processing liquid can be always supplied toaround the catalyst, resulting in a reduction in variation of theetching rate due to a change in concentration of the processing liquid.

According to a twentieth aspect of the present invention, in any of thefirst to nineteenth aspects, the substrate processing apparatus includesa conditioning unit configured to condition a surface of the catalyst.According to this aspect, an etching product adhered on the surface ofthe catalyst during the etching processing can be removed. As a result,the surface of the catalyst is recovered into an active status, whichallows a plurality of substrates to be processed stably.

According to a twenty-first aspect of the present invention, in thetwentieth aspect, the conditioning unit includes a scrub cleaning unitconfigured to scrub and clean the surface of the catalyst. According tothis aspect, the etching product adhered on the surface of the catalystduring the etching processing can be removed. As a result, the surfaceof the catalyst is recovered into the active status, which allows aplurality of substrates to be processed stably.

According to a twenty-second aspect of the present invention, in thetwentieth or twenty-first aspect, the conditioning unit includes achemical supply unit configured to supply a chemical for removing theetching product adhered on the surface of the catalyst. According tothis aspect, the etching product adhered on the surface of the catalystduring the etching processing can be removed. As a result, the surfaceof the catalyst is recovered into the active status, which allows aplurality of substrates to be processed stably.

According to a twenty-third aspect of the present invention, in any ofthe twentieth to twenty-second aspects, the conditioning unit includesan electrolytic regeneration unit configured to remove the etchingproduct on the surface of the catalyst with use of an electrolyticaction. The electrolytic regeneration unit includes an electrodeconfigured to be electrically connectable to the catalyst, and isconfigured to remove the etching product adhered on the surface of thecatalyst with use of the electrolytic action by applying a voltage tobetween the catalyst and the electrode. According to this aspect, theetching product adhered on the surface of the catalyst during theetching processing can be removed. As a result, the surface of thecatalyst is recovered into the active status, which allows a pluralityof substrates to be processed stably.

According to a twenty-fourth aspect of the present invention, in any ofthe twentieth to twenty-third aspects, the conditioning unit includes aplating regeneration unit configured to regenerate the catalyst byplating the catalyst with a regeneration catalyst prepared from the samekind of catalyst as the catalyst. The plating regeneration unit includesan electrode configured to be electrically connectable to the catalyst,and is configured to plate and regenerate the surface of the catalyst byapplying a voltage to between the catalyst and the electrode with thecatalyst immersed in liquid containing the regeneration catalyst.According to this aspect, a new catalyst layer can be formed on thecatalyst. As a result, the surface of the catalyst is recovered into theactive status, which allows a plurality of substrates to be processedstably.

According to a twenty-fifth aspect of the present invention, in any ofthe twentieth to twenty-fourth aspects, the substrate processingapparatus includes a monitoring unit configured to monitor a status ofprocessing for etching the processing target region of the substrate.According to this aspect, the processing status of the processing targetregion on the substrate can be monitored in real time.

According to a twenty-sixth aspect of the present invention, in thetwenty-fifth aspect, the substrate processing apparatus includes acontrol unit configured to control an operation of the substrateprocessing apparatus. The control unit is configured to control at leastone parameter in a processing condition of the substrate in processbased on the status of the processing for etching the substrate that isacquired by the monitoring unit. According to this aspect, theprocessing target region on the substrate can be processed so as toapproach a predetermined target value.

According to a twenty-seventh aspect of the present invention, in thetwenty-fifth aspect, the control unit is configured to determine an endpoint of the processing based on the status of the processing foretching the substrate that is acquired by the monitoring unit. Accordingto this aspect, the processing target region on the substrate can beprocessed so as to approach a predetermined target value.

According to a twenty-eighth aspect of the present invention, in thetwenty-fifth or twenty-seventh aspect, the monitoring unit includes atorque current monitoring unit configured to monitor the status of theprocessing for etching the substrate based on a torque current of thedriving unit when the catalyst holding unit and the substrate holdingunit are moved relative to each other. According to this aspect, afriction generated due to the contact between the processing targetregion of the substrate and the catalyst can be monitored via the torquecurrent. For example, the status of the processing for etching thesubstrate can be fed back to a determination about the processing endpoint and a processing condition by monitoring a variation in the torquecurrent due to, for example, a change in a roughness status of theprocessing target region or an exposure of another material on theprocessing target surface.

According to a twenty-ninth aspect of the present invention, in any ofthe twenty-fifth to twenty-seven aspects, the monitoring unit includesan optical monitoring unit configured to emit light toward theprocessing target region of the substrate to receive reflection lightreflected on a surface of the processing target region of the substrateor reflected after being transmitted through the substrate, and monitorthe status of the processing for etching the substrate based on thereceived light. According to this aspect, if the semiconductor materialof the processing target region is a light transmissive material, thestatus of the processing for etching the substrate can be fed back tothe determination about the processing end point and the processingcondition by monitoring a variation in intensity of reflected light dueto a change in a film thickness.

According to a thirtieth aspect of the present invention, in any of thetwenty-fifth to twenty-seventh aspects, the monitoring unit includes aneddy current monitoring unit configured to apply a high-frequencycurrent to a sensor coil disposed in proximity to the surface of thesubstrate to generate an eddy current on the substrate, and monitor thestatus of the processing for etching the substrate based on a change inthe eddy current or a synthetic impedance according to a thickness ofthe processing target region of the substrate. According to this aspect,if the semiconductor material of the processing target region is aconductive material, the status of the processing for etching thesubstrate can be fed back to the determination about the processing endpoint and the processing condition by monitoring a variation in an eddycurrent value or synthetic impedance due to the change in the filmthickness.

According to a thirty-first aspect of the present invention, in any ofthe first to thirtieth aspects, the substrate processing apparatusincludes a potential adjustment unit including a reference electrode.The potential adjustment unit is configured to establish anelectrochemical connection between the catalyst and the referenceelectrode to each other via the processing liquid to control a potentialon the surface of the catalyst. According to this aspect, the substrateprocessing apparatus can prevent the surface of the catalyst during theetching processing from adhering of a material that would block anactivity of catalyst. As a result, the surface of the catalyst can bekept in the active status.

According to a thirty-second aspect of the present invention, in any ofthe first to thirty-first aspects, the catalyst holding unit includes aspherical body or a cylindrical body with the layer of the catalystformed on a spherical surface of the spherical body or a circumferentialsurface of the cylindrical body. The spherical body or the cylindricalbody is configured in such a manner that, when the substrate holdingunit and the catalyst holding unit are moved relative to each other, thespherical body or the cylindrical body is rotatable according to thisrelative movement. According to this aspect, the friction can be reducedbetween the surface of the processing target region on the substrate andthe catalyst when the substrate holding unit and the catalyst holdingunit are moved relative to each other, resulting in prevention or areduction of the damage on the surface of the processing target regionand wear of the catalyst due to the friction.

According to a thirty-third aspect of the present invention, in thethirty-second aspect, the spherical body or the cylindrical bodyincludes an elastic member therein. According to this aspect, theelastic member is deformed, which allows the catalyst to evenly contactthe substrate in conformity with the shape of the substrate (warpage andthe like of the substrate), thereby allowing the contact portion to beetched with more uniform etching rate.

A thirty-fourth aspect of the present invention provides a substrateprocessing system. This substrate processing system includes thesubstrate processing apparatus according to any one of the first tothirty-third aspects, a substrate cleaning unit configured to clean thesubstrate, and a substrate transfer unit configured to transfer thesubstrate. According to this substrate processing system, the etchingproduct can be removed from the surface of the substrate after thesubstrate is processed, as a result of which the surface of thesubstrate can be cleaned.

According to a thirty-fifth aspect of the present invention, in thethirty-fourth aspect according to the fourteenth aspect, the substrateprocessing system includes a detection unit configured to detect atleast one of the notch, the orientation flat, and the laser marker ofthe substrate. According to this aspect, the effect of the fourteenthaspect can be preferably brought about.

According to a thirty-sixth aspect of the present invention, in thethirty-fourth or thirty-fifth aspect, the substrate processing systemincludes a thickness measurement unit configured to measure a thicknessof the processing target region of the substrate after the substrate isprocessed by the substrate processing apparatus. According to thisaspect, the substrate processing system can detect a thicknessdistribution of the processing target region of the substrate after theprocessing, and therefore can improve a quality of the processingperformed on the substrate by changing a parameter in a processingcondition based on a result of the measurement by the thicknessmeasurement unit when processing a next substrate.

According to a thirty-seventh aspect of the present invention, in thethirty-sixth aspect, the substrate processing system includes a firstparameter setting unit configured to set, based on the result of themeasurement by the thickness measurement unit, a control parameter foruse in substrate processing that will be performed by the substrateprocessing apparatus next time. According to this aspect, the substrateprocessing system can perform the processing after correcting anoriginal processing condition based on the result of the measurement bythe thickness measurement unit when processing a next substrate, andtherefore can improve the quality of the processing performed on thesubstrate.

According to a thirty-eighth aspect of the present invention, in thethirty-seventh aspect, the first parameter setting unit corrects thecontrol parameter based on a difference between a distribution of thethickness of the processing target region that is acquired based on theresult of the measurement by the thickness measurement unit, and apredetermined target distribution of the thickness. According to thisaspect, the substrate processing system can process the processingtarget region so as to achieve a thickness distribution closer to atarget value when processing the next substrate, and therefore canimprove the quality of the processing performed on the substrate.

According to a thirty-ninth aspect of the present invention, in any ofthe thirty-sixth to thirty-eighth aspects, the substrate processingsystem includes a reprocessing control unit configured to reprocess thesubstrate after the substrate is processed by the substrate processingapparatus if the result of the measurement by the thickness measurementunit does not satisfy a predetermined target value. According to thisaspect, the substrate processing system can process the processingtarget region so as to achieve a thickness distribution closer to atarget value when processing the next substrate, and therefore canimprove the quality of the processing performed on the substrate.

According to a fortieth aspect of the present invention, in any of thetwentieth to thirtieth aspects, the substrate processing system includesa second parameter change unit configured to change the controlparameter to be used by the substrate processing apparatus in the nextsubstrate processing based on the status of the processing for etchingthe substrate that is monitored by the monitoring unit. According tothis aspect, a similar effect to the thirty-sixth aspect can be broughtabout.

According to a forty-first aspect of the present invention, in thefortieth aspect, the second parameter change unit changes the controlparameter based on the result of the monitoring by the monitoring unit.According to this aspect, a similar effect to the thirty-eighth aspectcan be brought about.

According to a forty-second aspect of the present invention, in any ofthe thirty-fourth to forty-first aspects, the substrate processingsystem includes a Chemical Mechanical Polishing apparatus configured topolish the substrate before or after the substrate is processed by thesubstrate processing apparatus. According to this aspect, more flexiblypolishing processing can be performed by using the substrate processingsystem as prior processing or subsequent processing to the polishing bythe Chemical Mechanical Polishing apparatus.

A forty-third aspect of the present invention provides a substrateprocessing apparatus for processing a processing target region of asubstrate by bringing the substrate and a catalyst into contact witheach other in the presence of processing liquid. The substrateprocessing apparatus includes a catalyst holding unit configured to holdthe catalyst, and a conditioning unit configured to condition a surfaceof the catalyst. The substrate processing apparatus according to thisaspect can condition the surface of the catalyst, for example, duringexchanging the catalyst or replacing the substrate to be processed.

According to a forty-fourth aspect of the present invention, in theforty-third aspect, the conditioning unit includes a scrub cleaning unitconfigured to scrub and clean the surface of the catalyst. According tothis aspect, the substrate processing apparatus can clean and conditionthe surface of the catalyst by applying a physical force to the surfaceof the catalyst, and can effectively remove a residue and the likeadhered on the surface of the catalyst during deposition of the catalystand the processing of the substrate.

According to a forty-fifth aspect of the present invention, in theforty-third or forty-fourth aspect, the conditioning unit includes achemical supply unit configured to supply a chemical for removing anetching product adhered on the surface of the catalyst. According tothis aspect, the etching product adhered on the surface of the catalystand an altered layer on the surface of the catalyst can be removed withuse of a chemical action.

According to a forty-sixth aspect of the present invention, in any oneof the forty-third to forty-fifth aspects, the conditioning unitincludes an electrolytic regeneration unit configured to remove theetching product on the surface of the catalyst with use of anelectrolytic action. The electrolytic regeneration unit includes aregeneration electrode configured to be electrically connectable to thecatalyst, and is configured to remove the etching product adhered on thesurface of the catalyst with use of the electrolytic action by applyinga voltage to between the catalyst and the regeneration electrode.According to this aspect, the etching product adhered on the surface ofthe catalyst and the altered layer on the surface of the catalyst can beremoved with use of an electrolytic action.

According to a forty-seventh aspect of the present invention, in any ofthe forty-third to forty-sixth aspects, the conditioning unit includes aplating regeneration unit configured to regenerate the catalyst byplating the catalyst with a regeneration catalyst prepared from the samekind of catalyst as the catalyst. The plating regeneration unit includesa regeneration electrode configured to be electrically connectable tothe catalyst, and is configured to regenerate the catalyst by platingthe catalyst with the regeneration catalyst by applying a voltage tobetween the catalyst and the regeneration electrode with the catalystimmersed in liquid containing the regeneration catalyst. According tothis aspect, a new surface of the catalyst can be created.

According to a forty-eighth aspect of the present invention, in theforty-third aspect, the conditioning unit includes a conditioning stagedisposed so as to face the surface of the catalyst.

According to a forty-ninth aspect of the present invention, in theforty-eighth aspect, the substrate processing apparatus includes acatalyst cleaning nozzle configured to supply water and/or a chemicalfor cleaning the surface of the catalyst to the surface of the catalyst.According to this aspect, the etching product and the like adhered onthe surface of the catalyst can be easily removed.

According to a fiftieth aspect of the present invention, in theforty-ninth aspect, the catalyst cleaning nozzle is disposed outside theconditioning stage. According to this aspect, the catalyst cleaningnozzle can be prepared as a different member from the other structure,which improves maintainability.

According to a fifty-first aspect of the present invention, in theforty-eighth aspect, the catalyst cleaning nozzle is disposed inside theconditioning stage. The conditioning stage includes a passage forpassing the water and/or the chemical into the conditioning stage. Thepassage is in fluid communication with the catalyst cleaning nozzle.According to this aspect, the water and/or chemical can be evenlysprayed from below the catalyst. Further, a space where an externalnozzle is disposed can be reduced.

According to a fifty-second aspect of the present invention, in any ofthe forty-eighth to fifty-first aspects, the conditioning unit includesa scrub member disposed on the conditioning stage for cleaning thesurface of the catalyst.

According to a fifty-third aspect of the present invention, in any ofthe forty-eighth to fifty-second aspects, the substrate processingapparatus includes an electrode configured to be electricallyconnectable to the catalyst, a regeneration electrode disposed on theconditioning stage, and a power source configured to apply a voltage tobetween the electrode and the regeneration electrode. According to thisaspect, the catalyst can be conditioned with use of the electrolyticaction.

According to a fifty-fourth aspect of the present invention, in thefifty-third aspect, the substrate processing apparatus is configured toelectrolytically etch the surface of the catalyst by applying thevoltage in such a manner that the electrode on the catalyst side becomesa positive side and the regeneration electrode becomes a negative sidein conditioning. According to this aspect, the surface of the catalystcan be conditioned by electrolytic etching. As a result, a foreignobject and the like which cannot be removed by other action can beremoved.

According to a fifty-fifth aspect of the present invention, in thefifty-fourth aspect, the substrate processing apparatus is configured toreduce an oxide on the surface of the catalyst by applying the voltagein such a manner that the electrode on the catalyst side becomes thenegative side and the regeneration electrode becomes the positive sidein conditioning. According to this aspect, the surface of the oxidizedcatalyst can be recovered into the active status by a reduction action.

According to a fifty-sixth aspect of the present invention, in thefifty-third aspect, the substrate processing apparatus includes an ionexchanger provided on the regeneration electrode. The substrateprocessing apparatus is configured to apply the voltage with thecatalyst and the ion exchanger located in proximity to or in contactwith each other. The ion exchanger has a catalytic function forenhancing ionization of the water under an electric field, and H+ ionsand OH− ions generated therefrom act on the surface of the catalyst, bywhich a similar effect to the fifty-fourth or fifty-fifth aspect can bebrought about. Further, liquid used in this case may be water or adilute chemical, which can reduce a use amount of the chemical inconditioning.

According to a fifty-seventh aspect of the present invention, in any ofthe forty-eighth to fifty-sixth aspects, the conditioning stage includesa liquid reservoir portion configured to be able to keep liquid on theconditioning stage. According to this aspect, the surface of thecatalyst can keep the liquid during the conditioning, so that thesurface of the catalyst can be effectively conditioned. Further, the useamount of the liquid can be reduced.

According to a fifty-eighth aspect of the present invention, in thefifty-seventh aspect, the substrate processing apparatus includes anultrasonic wave generator configured to emit an ultrasonic wave to theliquid kept in the liquid reservoir portion. According to this aspect,the use of the ultrasonic wave can effectively remove a foreign objectand the like adhered on the catalyst.

According to a fifty-ninth aspect of the present invention, in any ofthe forty-eighth to fifty-eighth aspects, the conditioning stage isrotatably configured.

According to a sixtieth aspect of the present invention, in any of theforty-eighth to fifty-ninth aspects, the substrate processing apparatusincludes a catalyst measurement sensor for measuring a status of thesurface of the catalyst. The conditioning status is monitored by thecatalyst sensor, which can prevent or reduce an excess or insufficientconditioning of the catalyst.

According to a sixty-first aspect of the present invention, in thesixtieth aspect, the catalyst measurement sensor includes at least oneof (i) a resistance sensor configured to measure electric resistance ofthe catalyst, (ii) a thickness sensor configured to measure thethickness of the catalyst, and (iii) an optical sensor.

According to a sixty-second aspect of the present invention, in any ofthe forty-third to sixty-first aspects, the catalyst includes metal, andthe substrate processing apparatus includes an electrode electricallyconnectable to the metal of the catalyst. The electrode includes metalhaving larger ionization tendency than the metal of the catalyst.According to this aspect, the reduction action can be caused on thesurface of the catalyst with use of a cell reaction. As a result, thesurface of the catalyst can be prevented from being oxidized andhydroxylated or kept less oxidized and hydroxylated, and therefore canbe kept in the active status.

According to a sixty-third aspect of the present invention, in any ofthe forty-third to sixty-first aspects, the substrate processingapparatus includes a gas supply nozzle for supplying gas to the surfaceof the catalyst. According to this aspect, the surface of the catalystcan be prevented from being oxidized and hydroxylated or kept lessoxidized and hydroxylated, which otherwise would be caused due to areaction between the catalyst and the water, by being dried, andtherefore can be kept in the active status when the etching processingof the substrate is not performed for a long time, for example, duringan interval period in lot processing of the wafer W.

A sixty-fourth aspect of the present invention provides a substrateprocessing apparatus for processing a processing target region of asubstrate by bringing the substrate and a catalyst into contact witheach other in the presence of processing liquid. The substrateprocessing apparatus includes a substrate holding unit configured tohold the substrate, a catalyst holding unit configured to hold thecatalyst, and a control unit configured to control an operation of thesubstrate processing apparatus. The control unit performs control so asto move the catalyst holding unit in an in-plane direction of theprocessing target region of the substrate with the processing targetregion of the substrate and the catalyst kept in contact with eachother, and performs control so as to change a speed at which thecatalyst holding unit is moved according to a position of the catalystholding unit on the processing target region of the substrate. Accordingto this aspect, the substrate processing apparatus can move the catalystholding unit with a variable speed according to a position of thesubstrate and can control a time for which the catalyst and thesubstrate are in contact with each other, i.e., an etching time withinthe substrate, and thus can control the uniformity of etching ratewithin the substrate.

A sixty-fifth aspect of the present invention provides a substrateprocessing apparatus for processing a processing target region of asubstrate by bringing the substrate and a catalyst into contact witheach other in the presence of processing liquid. The substrateprocessing apparatus includes a substrate holding stage including asubstrate holding surface for holding the substrate, and a catalystholding unit configured to hold the catalyst. The substrate holdingsurface of the substrate holding stage is larger in area than a surfaceof the catalyst on the catalyst holding unit. The substrate holdingstage includes an extension portion located externally with respect toan outer periphery of the substrate when the substrate to be processedis set on the substrate holding stage. According to this aspect, thesubstrate processing apparatus can prevent the catalyst holding unitfrom tilting even when the catalyst holding unit overhangs beyond thesubstrate, and therefore can keep the catalyst and the substrate in aconstant contact status (for example, a distribution of a contactpressure). Therefore, the substrate processing apparatus can improve theuniformity of etching rate within the substrate.

According to a sixty-sixth aspect of the present invention, in thesixty-fifth aspect, the substrate processing apparatus includes aconditioning unit at the extension portion of the substrate holdingstage. The conditioning unit is configured to condition the surface ofthe catalyst. This configuration allows the catalyst to be conditionedduring not only the interval period of the substrate processing but alsothe period of the substrate processing, thereby allowing the surface ofthe catalyst to be kept in the active status during the processing.

A sixty-seventh aspect of the present invention provides a substrateprocessing apparatus for processing a processing target region of asubstrate by bringing the substrate and a catalyst into contact witheach other in the presence of processing liquid. The substrateprocessing apparatus includes a substrate holding stage including asubstrate holding surface for holding the substrate, and a catalystholding unit configured to hold the catalyst. The substrate holdingsurface of the substrate holding stage is larger in area than a surfaceof the catalyst on the catalyst holding unit. The catalyst holding unitfurther includes a tilt sensor for detecting a tilt of the surface ofthe catalyst with respect to the substrate holding surface of thesubstrate holding stage, and a tilt correction mechanism for correctingthe tilt of the surface of the catalyst with respect to the substrateholding surface of the substrate holding stage. According to thisaspect, the substrate processing apparatus can detect the tilt of thecatalyst holding surface, and prevent or reduce concentration of a loaddue to the tilt of the catalyst holding surface by correcting the tiltaccording to a result of the detection, and thus can keep the catalystand the substrate in the constant contact status (for example, thedistribution of the contact pressure). Therefore, the substrateprocessing apparatus can improve the uniformity of etching rate withinthe substrate.

A sixty-eighth aspect of the present invention provides a substrateprocessing apparatus for processing a processing target region of asubstrate by bringing the substrate and a catalyst into contact witheach other in the presence of processing liquid. The substrateprocessing apparatus includes a substrate holding unit configured tohold the substrate, a catalyst holding unit configured to hold thecatalyst, and a processing liquid supply unit including a supply portfor supplying the processing liquid passed through an inside of thecatalyst holding unit onto the processing target region of thesubstrate. According to this aspect, the processing liquid can besupplied to the surface where the catalyst and the substrate are incontact with each other, which allows the processing liquid to beeffectively supplied to the surface where the catalyst and the substrateare in contact with each other, improving the uniformity of etching ratewithin the substrate.

According to a sixty-ninth aspect of the present invention, in thesixty-eighth aspect, the catalyst holding unit includes a buffer portionconfigured to temporarily hold the processing liquid in the catalystholding unit, and a processing liquid supply portion including aplurality of supply ports for supplying the processing liquid passedthrough the inside the catalyst holding portion onto the processingtarget region of the substrate. The plurality of supply ports is influid communication with the buffer portion. According to this aspect,the processing liquid can be evenly supplied to the surface where thecatalyst and the substrate are in contact with each other, which canimprove the uniformity of etching rate within the substrate.

A seventieth aspect of the present invention provides a substrateprocessing apparatus for processing a processing target region of asubstrate by bringing the substrate and a catalyst into contact witheach other in the presence of processing liquid. The substrateprocessing apparatus includes a substrate holding unit configured tohold the substrate, and a catalyst holding unit configured to hold thecatalyst. The catalyst holding unit includes a plurality of groovesconfigured to allow the processing liquid to flow between the catalystholding unit and the substrate with the catalyst holding unit and thesubstrate kept in contact with each other. According to this aspect, theprocessing liquid can be effectively supplied to the surface where thecatalyst and the substrate are in contact with each other, which canimprove the uniformity of etching rate within the substrate.

According to a seventy-first aspect of the present invention, in theseventieth aspect, the plurality of grooves each has such a trapezoidalshape in cross-section that a width of the groove is wider at an openingof the groove than a bottom of the groove. According to this aspect, thegrooves can be maintained without being closed when the catalyst and thesubstrate are in contact with each other, thereby keeping the supply ofthe processing liquid to between the catalyst and the substrate, whichcan improve the uniformity of etching rate within the substrate.

According to a seventy-second aspect of the present invention, in theseventieth or the seventy-first aspect, the plurality of groovesincludes at least one of (i) a pattern including a plurality ofconcentric circles, (ii) a pattern including a plurality of radiallines, (iii) a pattern including pluralities of parallel lines extendingin intersecting different directions, and (iv) a spiral pattern.

A seventy-third aspect of the present invention provides a substrateprocessing apparatus for processing a processing target region of asubstrate by bringing the substrate and a catalyst into contact witheach other in the presence of processing liquid. The substrateprocessing apparatus includes a substrate holding unit configured tohold the substrate, and a catalyst holding unit configured to hold thecatalyst. The catalyst holding unit includes a counter electrodeconfigured to be electrically connectable to the catalyst via theprocessing liquid. According to this aspect, the active status of thesurface of the catalyst can be changed by application of a voltageoptimum for the substrate processing to the catalyst, which can improvethe etching rate within the substrate.

According to a seventy-fourth aspect of the present invention, in theseventy-third aspect, the catalyst holding unit includes a catalystholding member for holding the catalyst. The counter electrode isdisposed outside the catalyst holding member.

According to a seventy-fifth aspect of the present invention, in theseventy-third aspect, the counter electrode is disposed in such a mannerthat a plurality of counter electrodes is exposed to an inside of thecatalyst holding member. According to this aspect, an uniform potentialcan be applied in the plane of the catalyst, resulting in achievement ofevenness of the distribution of the active status of the surface of thecatalyst, thereby improving the uniformity of etching rate on thesurface where the catalyst and the substrate are in contact with eachother.

According to a seventy-sixth aspect of the present invention, in any ofthe seventy-third to seventy-fifth aspects, the catalyst holding unitincludes a processing liquid holding portion surrounding the catalystand open on a surface thereof facing the substrate holding portion, andis configured in such a manner that the processing liquid is kept in theprocessing liquid holding portion with the catalyst brought into contactwith the substrate.

According to a seventy-seventh aspect of the present invention, in theseventy-sixth aspect, the substrate processing apparatus includes aprocessing liquid supply unit including a supply port for supplying theprocessing liquid passed through the catalyst holding portion onto theprocessing target region of the substrate.

According to a seventy-eighth aspect of the present invention, in any ofthe seventy-third to seventy-seventh aspects, the substrate processingapparatus includes a voltage control device configured to apply avoltage to between the catalyst and the counter electrode. The voltagecontrol device is configured to control the voltage in such a mannerthat a potential on the catalyst side decreases below a potential of thecounter electrode so as to intermittently become a reduction side whilethe substrate is processed. According to this aspect, the reductionaction can be caused on the catalyst while the substrate is processed,by which the catalyst can be prevented from being oxidized andhydroxylated or kept less oxidized and hydroxylated, and the surface ofthe catalyst can be kept in the active status.

According to a seventy-ninth aspect of the present invention, in any oneof the seventy-third to seventy-eighth aspects, the catalyst iselectrically divided into a plurality of regions, and is configured toallow a different voltage to be applied for each of the plurality ofregions. According to this aspect, the active status of the surface ofthe catalyst can be changed by the application of the voltage varyingfor each region of the catalyst, which leads to an ability to change theetching rate of substrate for each region, thereby improvingcontrollability of the etching of the substrate.

According to an eightieth aspect of the present invention, in theseventy-ninth aspect, the catalyst holding unit is rotatably configured.The substrate processing apparatus includes a rotational position sensorconfigured to detect a rotational position of the catalyst holding unit,and a position sensor configured to detect a position of the catalystholding unit relative to the substrate holding unit.

According to an eighty-first aspect of the present invention, in theeightieth aspect, the substrate processing apparatus includes a voltagecontrol device configured to apply a voltage to between each of theregions of the catalyst and the counter electrode. The voltage controldevice receives the rotational position of the catalyst holding unitthat is detected by the rotational position sensor and the position ofthe catalyst holding unit relative to the substrate holding unit that isdetected by the position sensor, and control the voltage to each of theregions of the catalyst according to the rotational position of thecatalyst holding unit and the position of the catalyst holing unitrelative to the substrate holding unit.

An eighty-second aspect of the present invention provides a substrateprocessing apparatus for processing a processing target region of asubstrate by bringing the substrate and a catalyst into contact witheach other in the presence of processing liquid. The substrateprocessing apparatus includes a substrate holding unit configured tohold the substrate, a catalyst holding unit configured to hold thecatalyst and including a plurality of catalyst holding members forholding the catalyst, and a pressure control mechanism configured tocontrol the each of catalyst holding members independently and control acontact pressure between the substrate and the catalyst when thesubstrate and the catalyst are in contact with each other.

According to an eighty-third aspect of the present invention, in theeighty-second aspect, the pressure control mechanism controls thecontact pressure between the substrate and the catalyst by controlling apressure or a flow amount of fluid supplied into the plurality ofcatalyst holding members.

According to an eighty-fourth aspect of the present invention, in theeighty-second aspect, the pressure control mechanism includespiezoelectric elements attached to the plurality of catalyst holdingmembers, and controls the contact pressure between the catalyst and thesubstrate by controlling each of the piezoelectric elementsindependently.

According to an eighty-fifth aspect of the present invention, in any oneof the eighty-second to eighty-fourth aspects, the catalyst holding unitis rotatably configured. The substrate processing apparatus includes arotational position sensor configured to detect a rotational position ofthe catalyst holding unit, and a position sensor configured to detect aposition of the catalyst holding unit relative to the substrate holdingunit.

According to an eighty-sixth aspect of the present invention, in theeighty-fifth aspect, the pressure control mechanism receives a signalindicating the rotational position of the catalyst holding unit that isdetected by the rotational position sensor and a signal indicating theposition of the catalyst holding unit relative to the substrate holdingunit that is detected by the position sensor, and controls contactpressures between the substrate and the catalyst at the plurality ofcatalyst holding members independently according to the rotationalposition of the catalyst holding unit and the position of the catalystholing unit relative to the substrate holding unit.

According to an eighty-seventh aspect of the present invention, in anyone of the eighty-second to eighty-sixth aspects, each of the pluralityof catalyst holding members includes a pressure sensor configured todetect the contact pressure between the substrate and the catalyst.

According to an eighty-eighth aspect of the present invention, in theeighty-seventh aspect, the pressure control mechanism receives a signalindicating the pressure detected by each of the pressure sensors, andcontrols the contact pressures between the substrate and the catalyst atthe plurality of catalyst holding members independently so that thesubstrate and the catalyst are in contact with each other with apressure that achieves a predetermined contact pressure distribution.

An eighty-ninth aspect of the present invention provides a substrateprocessing apparatus for processing a processing target region of asubstrate by bringing the substrate and a catalyst into contact witheach other in the presence of processing liquid. The substrateprocessing apparatus includes a catalyst holding unit configured to holdthe catalyst and including a plurality of catalyst holding members forholding the catalyst, and a processing liquid supply unit including aplurality of processing liquid supply passages and a plurality ofprocessing liquid supply ports for supplying the processing liquidpassed through an inside of the catalyst holding unit onto theprocessing target region of the substrate. Each of the plurality ofprocessing liquid supply passages is configured to allow a flow amountof the processing liquid to be adjusted independently.

According to a ninetieth aspect of the present invention, in theeighty-ninth aspect, each of the plurality of processing liquid supplypassages is provided with a flowmeter for measuring the flow amount ofthe processing liquid and a valve for adjusting the flow amount of theprocessing liquid.

According to a ninety-first aspect of the present invention, in theeighty-ninth or ninetieth aspect, the substrate processing apparatusincludes a pressure control mechanism configured to control theplurality of catalyst holding members independently to control a contactpressure between the substrate and the catalyst independently for eachof the plurality of catalyst holding members when the substrate and thecatalyst are in contact with each other.

According to a ninety-second aspect of the present invention, in theninety-first aspect, the pressure control mechanism controls the contactpressure between the substrate and the catalyst by supplying fluid intoeach of the plurality of catalyst holding members.

According to a ninety-third aspect of the present invention, in theninety-first aspect, the pressure control mechanism includespiezoelectric elements attached to the plurality of catalyst holdingmembers, and controls a distribution of the contact pressure between thecatalyst and the substrate by controlling each of the piezoelectricelements independently.

A ninety-fourth aspect of the present invention provides a substrateprocessing apparatus for processing a processing target region of asubstrate by bringing the disk-shaped substrate and a catalyst intocontact with each other in the presence of processing liquid. Thesubstrate processing apparatus includes a substrate holding unitconfigured to hold the substrate, a catalyst holding unit configured tohold the catalyst, and a driving unit configured to move the substrateholding unit and the catalyst holding unit relative to each other withthe processing target region of the substrate and the catalyst kept incontact with each other. The substrate holding unit has a circularregion for holding the substrate. The catalyst holding unit includes acatalyst holding member for holding the catalyst. The catalyst holdingmember has a substantially fan-like shape or triangular shapeoverlapping the substrate from a central portion of the substrate to apart of an outer edge of the substrate with the disk-shaped substrateand the catalyst kept in contact with each other.

According to a ninety-fifth aspect of the present invention, in theninety-fourth aspect, the driving unit is configured to be able to movethe catalyst holding unit in a radial direction of the circler regionfor holding the substrate.

According to a ninety-sixth aspect of the present invention, in theninety-fourth or ninety-fifth aspect, the catalyst holding memberincludes a groove configured to allow the processing liquid to passthrough between the catalyst holding member and the substrate with thecatalyst holding member and the substrate kept in contact with eachother.

A ninety-seventh aspect of the present invention provides a substrateprocessing apparatus for processing a processing target region of asubstrate by bringing the substrate and a catalyst into contact witheach other in the presence of processing liquid. The substrateprocessing apparatus includes a substrate holding unit configured tohold the substrate, a catalyst holding unit configured to hold thecatalyst, and a driving unit configured to move the substrate holdingunit and the catalyst holding unit relative to each other with theprocessing target region of the substrate and the catalyst kept incontact with each other. The catalyst holding unit includes a catalystholding member for holding the catalyst. The catalyst holding memberincludes a plurality of spherical bodies or a plurality of cylindricalbodies with a layer of the catalyst formed on special surfaces of thespherical bodies or circumferential surfaces of the cylindrical bodies.The plurality of spherical bodies or the plurality of cylindrical bodiesis configured to be held in such a manner that, when the substrateholding unit and the catalyst holding unit are moved relative to eachother, the plurality of spherical bodies or the plurality of cylindricalbodies is rotatable according to this relative movement.

A ninety-eighth aspect of the present invention provides a substrateprocessing apparatus for processing a processing target region of asubstrate by bringing the substrate and a catalyst into contact witheach other in the presence of processing liquid. The substrateprocessing apparatus includes a substrate holding unit configured tohold the substrate, and a catalyst holding unit configured to hold thecatalyst. The catalyst holding unit is configured to be able to vibratein a direction perpendicular to a surface of the substrate.

According to a ninety-ninth aspect of the present invention, in theninety-eighth aspect, the catalyst holding unit includes a piezoelectricelement. The substrate processing apparatus includes a power sourceconfigured to apply an alternating-current to the piezoelectric element.

A hundredth aspect of the present invention provides a substrateprocessing apparatus for processing a processing target region of asubstrate by bringing the substrate and a catalyst into contact witheach other in the presence of processing liquid. The substrateprocessing apparatus includes a substrate holding unit configured tohold the substrate and including a plurality of substrate holding stageseach configured to hold a single substrate, and a plurality of catalystholding units each associated with corresponding one of the plurality ofsubstrate holding stages and configured to hold the catalyst.

According to a hundred and first aspect of the present invention, in thehundredth aspect, at least some of the plurality of catalyst holdingunits hold different kinds of catalysts.

A hundred and second aspect of the present invention provides asubstrate processing apparatus for processing a processing target regionof a substrate by bringing the substrate and a catalyst into contactwith each other in the presence of processing liquid. The substrateprocessing apparatus includes a substrate holding unit configured tohold the substrate, and a plurality of catalyst holding units configuredto hold the catalyst.

According to a hundred and third aspect of the present invention, in thehundred and second aspect, the substrate processing includes aconditioning unit configured to condition a surface of the catalyst.

According to a hundred and fourth aspect of the present invention, inthe hundred and second or hundred and third aspect, at least some of theplurality of catalyst holding units are operable under differentprocessing conditions.

According to a hundred and fifth aspect of the present invention, in anyone of the hundred and second to hundred and fourth aspects, at leastsome of the plurality of catalyst holding units have regions for holdingthe catalyst that are different from each other or one another in area.

According to a hundred and sixth aspect of the present invention, in anyone of the hundred and second to hundred and fifth aspects, at leastsome of the plurality of catalyst holding units hold different kinds ofcatalysts.

A hundred and seventh aspect of the present invention provides asubstrate processing apparatus for processing a processing target regionof a substrate by bringing the substrate and a catalyst into contactwith each other in the presence of processing liquid. The substrateprocessing apparatus includes a substrate holding unit configured tohold the substrate, a catalyst holding unit configured to hold thecatalyst for processing the substrate held on the substrate holdingunit, and a substrate cleaning unit configured to clean the substrateheld on the substrate holding unit.

A hundred and eighth aspect of the present invention provides asubstrate processing apparatus for processing a processing target regionof a substrate by bringing the substrate and a catalyst into contactwith each other in the presence of processing liquid. The substrateprocessing apparatus includes a substrate holding unit configured tohold the substrate, a catalyst holding unit configured to hold thecatalyst, and a processing liquid supply unit including a supply portfor supplying the processing liquid onto the processing target region ofthe substrate. A region of the substrate holding unit for holding thesubstrate tilts by a predetermined angle with respect to a horizontalplane. The supply port of the processing liquid supply unit is disposedon an upper side with respect to the catalyst holding unit in terms ofthe gravity with the substrate and the catalyst kept in contact witheach other.

According to a hundred and ninth aspect of the present invention, in thehundred and eighth aspect, the processing liquid supply unit isconfigured in such a manner that the supply port is movable togetherwith the supply port.

A hundred and tenth aspect of the present invention provides a substrateprocessing apparatus for processing a processing target region of asubstrate by bringing the substrate and a catalyst into contact witheach other in the presence of processing liquid. The substrateprocessing apparatus includes a catalyst holding unit configured to holdthe catalyst. The catalyst holding unit includes a catalyst temperaturecontrol mechanism for controlling a temperature of the catalyst.

According to a hundred and eleventh aspect of the present invention, inthe hundred and tenth fourth aspect, the catalyst temperature controlmechanism includes a Peltier element.

A hundred and twelfth aspect of the present invention provides asubstrate processing system. The substrate processing system includesthe substrate processing apparatus according to any one of the first tothirty-second aspects and the forty-third to the hundred and eleventhaspects, a substrate cleaning unit configured to clean the substrate, asubstrate drying unit for drying the cleaned substrate, and a substratetransfer unit configured to transfer the substrate.

According to a hundred and thirteenth aspect of the present invention,in the hundred and twelfth aspect, the substrate transfer unit isconfigured to be able to transfer the substrate in a wet status and thesubstrate in a dry status separately.

A hundred and fourteenth aspect of the present invention provides asubstrate processing system. The substrate processing system includesthe substrate processing apparatus according to any one of the first tothirty-second aspects and the forty-third to the hundred and eleventhaspects, and a deposition apparatus configured to perform depositionprocessing on the substrate.

According to a hundred and fifteenth aspect of the present invention, inthe hundred and fourteenth aspect, the deposition apparatus includes atleast one of a chemical vapor deposition (CVD) apparatus, a sputteringapparatus, a plating apparatus, and a coater apparatus.

A hundred and sixteenth aspect of the present invention provides asubstrate processing apparatus for processing a processing target regionof a substrate by bringing the substrate and a catalyst into contactwith each other in the presence of processing liquid. The substrateprocessing apparatus includes a catalyst holding unit configured to holdthe catalyst. The catalyst holding unit includes an elastic member, anda film attached to the elastic member to hold the catalyst.

According to a hundred and seventeenth aspect of the present invention,in the hundred and sixteenth aspect, the film is made from resin.

According to a hundred and eighteenth aspect of the present invention,in the hundred and sixteenth or hundred and seventeenth aspect, the filmincludes a groove configured in such a manner that the processing liquidcan flow in a plane of the substrate between the catalyst and thesubstrate with the catalyst and the substrate kept in contact with eachother.

According to a hundred and nineteenth aspect of the present invention,in the hundred and eighteenth aspect, a cross-sectional shape of thegroove is such a trapezoidal shape that a width of the groove is widerat an opening of the groove than at a bottom of the groove.

According to a hundred and twentieth aspect of the present invention, inany one of the hundred and sixteenth to hundred nineteenth aspects, thecatalyst holding unit includes a processing liquid supply unit providedwith a plurality of processing liquid supply passages and a plurality ofprocessing liquid supply ports for transmitting the processing liquid inthe catalyst holding unit to supply the processing liquid to theprocessing target region of the substrate.

A hundred and twenty-first aspect of the present invention provides asubstrate processing apparatus for processing a processing target regionof a substrate by bringing the substrate and a catalyst into contactwith each other in the presence of processing liquid. The substrateprocessing apparatus includes a catalyst holding unit configured to holdthe catalyst. The catalyst holding unit includes an elastic member and alayer of a harder material than the elastic member that is disposedbetween the elastic member and the catalyst.

A hundred and twenty-second aspect of the present invention provides asubstrate processing apparatus for processing a processing target regionof a substrate by bringing the substrate and a catalyst into contactwith each other in the presence of processing liquid. The substrateprocessing apparatus includes a catalyst holding unit configured to holdthe catalyst. The catalyst holding unit includes an inlet passage forsupplying the processing liquid to a surface of the catalyst, and anoutlet passage for collecting the processing liquid from the surface ofthe catalyst.

A hundred and twenty-third aspect of the present invention provides asubstrate processing apparatus for processing a processing target regionof a substrate by bringing the substrate and a catalyst into contactwith each other in the presence of processing liquid. The substrateprocessing apparatus includes a monitoring unit configured to monitor astatus of processing for etching the processing target region of thesubstrate.

According to a hundred and twenty-fourth aspect of the presentinvention, in the hundred and twenty-third aspect, the substrateprocessing apparatus includes a control unit configured to control anoperation of the substrate processing apparatus. The control unit isconfigured to control at least one parameter in a condition of theprocessing performed on the substrate in process based on the status ofthe processing for etching the substrate that is acquired by themonitoring unit.

According to a hundred and twenty-fifth aspect of the present invention,in the hundred and twenty-third aspect, the control unit is configuredto determine an end point of the processing based on the status of theprocessing for etching the substrate that is acquired by the monitoringunit.

According to a hundred and twenty-sixth aspect of the present invention,in the hundred and twenty-third or hundred and twenty-fifth aspect, thesubstrate processing apparatus includes a catalyst holding unitconfigured to hold the catalyst. The monitoring unit includes a torquecurrent monitoring unit configured to monitor the status of theprocessing for etching the substrate based on a torque current of thedriving unit when the catalyst holding unit and a substrate holding unitare moved relative to each other.

According to a hundred and twenty-seventh aspect of the presentinvention, in the hundred and twenty-third aspect, the substrateprocessing apparatus includes a substrate holding unit configured tohold the substrate, and a catalyst holding unit configured to hold thecatalyst. The monitoring unit includes a torque current monitoring unitconfigured to monitor the status of the processing for etching thesubstrate based on at least one of a torque current when the catalystholding unit is rotationally driven and a torque current when thesubstrate holding unit is rotationally driven.

According to a hundred and twenty-eighth aspect of the presentinvention, in the hundred and twenty-third aspect, the substrateprocessing apparatus includes a substrate holding unit configured tohold the substrate, and a catalyst holding unit configured to hold thecatalyst. The monitoring unit includes a vibration sensor provided tothe catalyst holding unit. The vibration sensor is configured to detecta vibration when the substrate holding unit and the catalyst holdingunit are moved relative to each other. The monitoring unit is configuredto monitor the status of the processing for etching the substrate bydetecting a change in the vibration detected by the vibration sensor.

A hundred and twenty-ninth aspect of the present invention provides asubstrate processing apparatus for processing a processing target regionof a substrate by bringing the substrate and a catalyst into contactwith each other in the presence of processing liquid. The substrateprocessing apparatus includes a catalyst holding unit configure to holdthe catalyst. The catalyst holding unit includes a disk holder portion,and a catalyzer disk portion coupled detachably from the disk holderportion. The catalyzer disk portion includes a catalyst holding unithaving a surface where the catalyst is held, a catalyst electrodeelectrically connected to the catalyst, and a counter electrode. Thedisk holder portion includes a catalyst electrode wiring electricallyconnected to the catalyst electrode, a counter electrode wiringelectrically connected to the counter electrode, and a contact probe forelectrically connecting the catalyst electrode to the catalyst electrodewiring and a contact probe for electrically connecting the counterelectrode to the couther electrode wiring when the disk holder portionand the catalyzer disk portion are coupled with each other. Thesubstrate processing apparatus includes power source for applying avoltage to between the catalyst electrode and the counter electrode.

A hundred and thirtieth aspect of the present invention provides asubstrate processing apparatus for processing a processing target regionof a substrate by bringing the substrate and a catalyst into contactwith each other in the presence of processing liquid. The substrateprocessing apparatus includes a catalyst holding unit configured to holdthe catalyst, and a swing arm configured to be able to move the catalystholding unit in a direction perpendicular to a surface of the substrate.The swing arm is attached to the catalyst holding unit. The swing armincludes a load cell configured to measure a contact pressure when thecatalyst of the catalyst holding unit is in contact with the substrate.

According to a hundred and thirty-first aspect of the present invention,in the hundred and thirtieth aspect, the substrate processing apparatusincludes a PID controller configured to control a pressure with whichthe catalyst and the substrate are in contact with each other based onthe contact pressure measured by the load cell.

According to a hundred and thirty-second aspect of the presentinvention, in the hundred and thirtieth aspect, the swing arm includes acover surrounding the entire swing arm, and is configured to be able tosupply air and/or nitrogen into the cover.

A hundred and thirty-third aspect of the present invention provides asubstrate processing apparatus for processing a processing target regionof a substrate by bringing the substrate and a catalyst into contactwith each other in the presence of processing liquid. The substrateprocessing apparatus includes a substrate holding unit configured tohold the substrate. The substrate holding unit includes a substrateholding stage and a vacuum suction plate for holding the substrate ontothe substrate holding stage with use of vacuum suction. The vacuumsuction plate includes a suction bore. The substrate holding unitincludes a vacuum line in fluid communication with the suction bore ofthe vacuum suction plate. The vacuum line is configured to be able tocarry out vacuum suction of the substrate onto the vacuum suction plateby vacuuming, and release the vacuum suction by supplying water and/orair or nitrogen to the vacuum line.

A hundred and thirty-fourth aspect of the present invention provides amethod for processing a processing target region of a substrate bybringing the substrate and a catalyst into contact with each other inthe presence of processing liquid. The method includes supplying theprocessing liquid to the processing target region of the substrate,bringing the catalyst into contact with the processing target region ofthe substrate, moving the substrate and the catalyst relative to eachother with the substrate and the catalyst kept in contact with eachother, cleaning the substrate with a chemical, cleaning the substratewith water, and conditioning a surface of the catalyst while cleaningthe substrate with the chemical or the water.

The present invention can also be realized by freely combining oromitting at least a part of the components of any of the above-describedaspects or components of embodiments that will be described below,besides the above-described aspects. Several specific examples thereofwill be described now. For example, an aspect of the present inventionmay be an arbitrary substrate processing apparatus including at leastone of a substrate holding unit configured to hold a substrate, acatalyst holding unit configured to hold a catalyst, and a driving unitconfigured to move the substrate holding unit and the catalyst holdingunit relative to each other with a processing target region of thesubstrate and the catalyst kept in contact with each other, and having apart of the features described in the present disclosure. Alternatively,an aspect of the present invention may be an arbitrary substrateprocessing apparatus including at least one of a substrate holding unitconfigured to hold a substrate, a catalyst holding unit configured tohold a catalyst, and a driving unit configured to move the substrateholding unit and the catalyst holding unit relative to each other with aprocessing target region of the substrate and the catalyst kept incontact with each other, in which the catalyst includes two or morekinds of individual catalysts, or is a mixture or a compound containingtwo kinds of catalysts. Alternatively, an aspect of the presentinvention may be an arbitrary substrate processing apparatus includingat least one of a substrate holding unit configured to hold a substrate,a catalyst holding unit configured to hold a catalyst, and a drivingunit configured to move the substrate holding unit and the catalystholding unit relative to each other with a processing target region ofthe substrate and the catalyst kept in contact with each other, in whichthe catalyst holding unit includes a spherical body or a cylindricalbody with a layer of the catalyst formed on a spherical surface of thespherical body or a circumferential surface of the cylindrical body, andthe spherical body or the cylindrical body is configured in such amanner that, when the substrate holding unit and the catalyst holdingunit are moved relative to each other, the spherical body or thecylindrical body is rotatable according to this relative movement. Itshould be noted that, in these aspects, the catalyst does notnecessarily have to be smaller than the substrate, which is one ofcharacteristic features of the first aspect.

Further, the specific features of the components in the above-describedaspects or the components in the embodiments that will be describedbelow can be treated separately from one another, and can be omitted asneeded. For example, the processing liquid temperature adjustment unitin the fifteenth aspect can be modified into a component configured toadjust the temperature of the processing liquid to a predeterminedtemperature without the range from ten degrees to sixth degrees,inclusive. Having described several modifications other than the firstto forty-second aspects, but they are merely one example. The presentinvention can also be realized by arbitrarily combining or omitting atleast a part of the components describe in the present disclosure andthe respective specific features of these components, as long as atleast a part of the above-described problems can be solved or at least apart of the above-described effects can be brought about.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic plan view schematically illustrating aconfiguration of a substrate processing apparatus as one embodiment ofthe present invention.

FIG. 2 is a schematic side view of the substrate processing apparatus.

FIG. 3 is a schematic cross-sectional view illustrating details of acatalyst holding unit.

FIG. 4 is a schematic cross-sectional view illustrating another exampleof the catalyst holding unit.

FIG. 5 is a schematic cross-sectional view illustrating another exampleof the catalyst holding unit.

FIG. 6 is a schematic cross-sectional view illustrating another exampleof the catalyst holding unit.

FIG. 7 is a schematic cross-sectional view illustrating another exampleof the catalyst holding unit.

FIG. 8 is a schematic side view of a substrate processing apparatus as asecond embodiment.

FIG. 9 is a schematic side view of a substrate processing apparatus as athird embodiment.

FIG. 10 is a schematic side view of a substrate processing apparatus asa fourth embodiment.

FIG. 11 is a schematic side view of a substrate processing apparatus asa modification of the fourth embodiment.

FIG. 12 is a schematic side view of a substrate processing apparatus asa fifth embodiment.

FIG. 13 is a schematic side view of a substrate processing apparatus asa sixth embodiment.

FIG. 14 is a schematic plan view of a substrate processing system as aneighth embodiment.

FIG. 15 is a schematic perspective view of a substrate processingapparatus as a ninth embodiment.

FIG. 16 is a schematic cross-sectional view of the substrate processingapparatus illustrated in FIG. 15.

FIG. 17A is a schematic side view illustrating a configuration of anembodiment of a conditioning unit.

FIG. 17B is a schematic side view illustrating the configuration of theembodiment of the conditioning unit.

FIG. 18 is a schematic side view of a substrate processing apparatus asone embodiment.

FIG. 19 is a schematic side view of a substrate processing apparatus asone embodiment.

FIG. 20 is a schematic side view of a substrate processing apparatus asone embodiment.

FIG. 21 is a schematic side view of a substrate processing apparatus asone embodiment.

FIG. 22 is a schematic top view of a substrate processing apparatus asone embodiment.

FIG. 23 is a graph indicating a relationship between a speed at which acatalyst swings and an etching rate of substrate.

FIG. 24 is a schematic side view of a substrate processing apparatus asone embodiment.

FIG. 25 is a schematic top view of a substrate processing apparatus asone embodiment.

FIG. 26 is a schematic top view of a substrate processing apparatus asone embodiment.

FIG. 27 is a schematic side view of a substrate processing apparatus asone embodiment.

FIG. 28 is a schematic side view of a catalyst holding unit as oneembodiment.

FIG. 29 is a schematic side view of a catalyst holding unit as oneembodiment.

FIG. 30 is a schematic side view of a catalyst holding unit as oneembodiment.

FIG. 31 is a schematic side view of a catalyst holding unit as oneembodiment.

FIG. 32 is a schematic side view of a catalyst holding unit as oneembodiment.

FIG. 33 is a schematic bottom view of the catalyst holding unitillustrated in FIG. 32.

FIG. 34 illustrates an example of a pattern of a potential applied tothe catalyst.

FIG. 35 illustrates an example of a pattern of a potential applied tothe catalyst.

FIG. 36 is a schematic plan view illustrating a pattern in which thecatalyst is arranged as one embodiment.

FIG. 37 is a schematic plan view illustrating an example of processingthe substrate with use of the catalyst holding unit illustrated in FIG.36.

FIG. 38 is a schematic plan view illustrating a pattern in which thecatalyst is arranged as one embodiment.

FIG. 39A is a schematic side view of a catalyst holding unit as oneembodiment.

FIG. 39B is a plan view of the catalyst holding unit illustrated in FIG.39A as viewed from the catalyst.

FIG. 39C is a schematic side view of a catalyst holding unit as oneembodiment.

FIG. 39D is a plan view of the catalyst holding unit illustrated in FIG.39C as viewed from the catalyst.

FIG. 40 is a schematic plan view of a catalyst holding unit as oneembodiment.

FIG. 41 is a schematic plan view of a catalyst holding unit as oneembodiment.

FIG. 42 is a graph indicating a potential applied to the catalyst andthe etching rate.

FIG. 43 is a graph indicating a potential applied to the catalyst andthe etching rate.

FIG. 44 is a graph indicating a potential applied to the catalyst andthe etching rate.

FIG. 45 is a schematic top view of a substrate processing apparatus asone embodiment.

FIG. 46 is a schematic side view illustrating components of a catalystholding unit as one embodiment.

FIG. 47A is a schematic side view illustrating components of a catalystholding unit as one embodiment.

FIG. 47B is a schematic bottom view illustrating the componentsillustrated in FIG. 47A.

FIG. 48 is a schematic side view illustrating components of a catalystholding unit as one embodiment.

FIG. 49 is a schematic side view of a substrate processing apparatus asone embodiment.

FIG. 50 is a schematic side view of a substrate processing apparatus asone embodiment.

FIG. 51 is a schematic top view of a substrate processing apparatus asone embodiment.

FIG. 52 schematically illustrates a configuration of a substrateprocessing apparatus as one embodiment.

FIG. 53 schematically illustrates a configuration of a substrateprocessing apparatus as one embodiment.

FIG. 54 is a schematic side view illustrating a catalyst holding unit asone embodiment.

FIG. 55 is a schematic side view illustrating a catalyst holding unit asone embodiment.

FIG. 56 is a schematic side view illustrating a catalyst holding unit asone embodiment.

FIG. 57 is a schematic bottom view illustrating a catalyst holding unitas one embodiment.

FIG. 58 is a schematic cross-sectional view illustrating one ofoutlet/inlets of the catalyst holding unit illustrated in FIG. 57.

FIG. 59 is a schematic side cross-sectional view illustrating a catalystholding unit mounted on a swing arm as one embodiment.

FIG. 60 schematically illustrates a configuration for controlling apressure with which the catalyst holding unit and the wafer W are incontact with each other with use of the swing arm as one embodiment.

FIG. 61 is a flowchart illustrating a flow of performing PID control onthe pressure with which the catalyst holding unit and the wafer are incontact with each other as one embodiment.

FIG. 62 is a schematic side cross-sectional view illustrating asubstrate holding unit as one embodiment.

FIG. 63 is a top view illustrating a vacuum suction plate as oneembodiment.

FIG. 64 is a plan view schematically illustrating a configuration of asubstrate processing apparatus as one embodiment.

FIG. 65 is a schematic side view illustrating a catalyst holding unit asone embodiment.

FIG. 66 is a schematic side cross-sectional view illustrating a catalystholding unit as one embodiment.

DESCRIPTION OF EMBODIMENTS

In the following description, embodiments of a substrate processingapparatus and a substrate processing system including the substrateprocessing apparatus according to the present invention will bedescribed with reference to the drawings. The drawings and the followingdescription cover only characteristic features of the embodiments aswill be described below, and refrain from elaborating other componentsherein. The present invention can be embodied with use of features ofother embodiments and known techniques in terms of the componentsundiscussed herein.

A. First Embodiment

FIG. 1 is a schematic plan view of a substrate processing apparatus 10of a substrate processing system as one embodiment of the presentinvention. FIG. 2 is a side view of the substrate processing apparatus10 illustrated in FIG. 1. The substrate processing apparatus 10 is anapparatus that performs etching processing on a semiconductor material(a processing target region) on a substrate with use of the CARE method.The substrate processing system includes the substrate processingapparatus 10, a substrate cleaning unit configured to clean thesubstrate, and a substrate transfer unit configured to transfer thesubstrate. Further, the substrate processing system may include asubstrate drying unit (not illustrated) if necessary. The substratetransfer unit is configured to be able to transfer a substrate in a wetstatus and a substrate in a dry status separately. Further, thesubstrate processing system may perform processing based on theconventional CMP method before or after the processing performed by thepresent substrate processing apparatus depending on the kind of thesubstrate material, and therefore may further include a CMP apparatus.Further, the substrate processing system may include a depositionapparatus, such as a chemical vapor deposition (CVD) apparatus, asputtering apparatus, a plating apparatus, and a coater apparatus. Inthe present embodiment, the substrate processing apparatus 10 isconfigured as a separate unit from the CMP apparatus. The substratecleaning unit, the substrate transfer unit, and the CMP apparatus areknown techniques, so that they are not illustrated and will not bedescribed in the following description.

The substrate processing apparatus 10 includes a substrate holding unit20, a catalyst holding unit 30, a processing liquid supply unit 40, aswing arm 50, a conditioning unit 60, and a control unit 90. Thesubstrate holding unit 20 is configured to hold a wafer W, which is onekind of substrate. In the present embodiment, the substrate holding unit20 holds the wafer W in such a manner that the wafer W is placed with apolishing target surface face up. Further, in the present embodiment,the substrate holding unit 20 includes a vacuum suction mechanismequipped with a vacuum suction plate that sucks a back surface of thewafer W (an opposite surface from the polishing target surface) withvacuum as a mechanism for holding the wafer W. The vacuum suction may becarried out by any method of a point suction method using a suctionplate including a plurality of suction holes connected to a suction lineon a suction surface thereof, and a surface suction method using asuction surface including grooves (for example, concentrically formedgrooves) to suck the wafer via connection holes formed in the groovesthat lead to a vacuum line. Further, a packing member may be attached onthe surface of the suction plate and the wafer W may be sucked via thispacking member so that the suction status can be stabilized. However,the mechanism for holding the wafer W can be any known mechanism, andfor example, may be a clamp mechanism that clamps the front surface andthe back surface of the wafer W on at least one portion along acircumferential edge of the wafer W or a roller chuck mechanism thatholds a side surface of the wafer W on at least one portion along thecircumferential edge of the wafer W. This substrate holding unit 20 isconfigured rotatably around an axis AL1 by a driving unit motor and anactuator (not illustrated). Further, in FIGS. 1 and 2, the substrateholding unit 20 includes a vertically upwardly extending wall 21throughout an entire circumferential direction outside a region of thesubstrate holding unit 20 for holding the wafer W. This provision allowsprocessing liquid to be held within a wafer surface, resulting in areduction in a consumed amount of the processing liquid. In FIGS. 1 and2, the wall 21 is fixed on an outer periphery of the substrate holdingunit 20, but may be configured as a separate member from the substrateholding unit. In this case, the wall 21 may be configured verticallymovability. The vertical movability allows the processing liquid to bekept by a variable amount, and, for example, allows cleaning liquid tobe efficiently discharged out of the wafer W by a downward movement ofthe wall 21 if a surface of the substrate is supposed to be cleanedafter the etching processing.

FIG. 62 is a schematic side cross-sectional view illustrating thesubstrate holding unit 20 as one embodiment. The illustrated substrateholding unit 20 includes a wafer holding stage 20-2 that holds the waferW. The substrate holding unit 20 according to the illustrated embodimentholds the wafer W in such a manner that the wafer W is placed with theprocessing target surface thereof face up. Further, in the presentembodiment, the substrate holding unit 20 includes the vacuum suctionmechanism provided with a vacuum suction plate 20-6 that sucks the backsurface of the wafer W with vacuum as the mechanism for holding thewafer W. The vacuum suction plate 20-6 can be attached to the waferholing stage 20-2 by means of, for example, a double-sided tape or ascrew. The wafer holding stage 20-2 is rotatable by a motor 20-18. Asone embodiment, the substrate holding unit 20 can be configured to beable to supply air or nitrogen to around the motor 20-18. The CAREprocessing may use a highly corrosive chemical, whereby a higherpressure in the substrate holding unit 20 than an outer atmosphericpressure contributes to preventing processing liquid PL from enteringthe substrate holding unit 20, thereby succeeding in protecting themotor and the like against corrosion. A plurality of suction holes20-10, which is connected to a vacuum line 20-8, is formed through thewafer holding stage 20-2 and the vacuum suction plate 20-6. In theillustrated embodiment, the suction holes 20-10 are located aroundcenters of the wafer holding stage 20-2 and the vacuum suction plate20-6. This positioning can reduce a size of a liquid reservoir portion20-22 inside the wafer holding stage 20-2. The vacuum line 20-8 can beconnected to a not-illustrated vacuum source via a rotary joint 20-20.Further, the vacuum line 20-8 can supply water and/or air (or nitrogen)by a switching valve, and releases the suction of the wafer W bysupplying the water and/or the air (or the nitrogen). The substrateholding unit 20 includes a plurality of vertically movable lift pins20-12 outside the wafer holding stage 20-2. A cylinder mechanism 20-14is coupled with the lift pines 20-12, and the lift pins are verticallymovable by the cylinder mechanism 20-14. When the lift pins 20-12 aremoved upward, the substrate holding unit 20 can lift the wafer W fromthe wafer holding stage 20-2 to transfer the wafer W to a transfermechanism. Further, when the wafer W is transferred from the transfermechanism, the substrate holding unit 20 also receives the wafer W withthe lift pins 20-1 located at upward moved positions. The substrateholding unit 20 includes a cup 20-18 surrounding around the waferholding stage 20-2. The cup 20-18 prevents liquid such as the processingliquid PL from being scattered around while the wafer W is processed.

FIG. 63 is a top view illustrating the vacuum suction plate 20-6 as oneembodiment. As illustrated in FIG. 63, the plurality of suction holes20-10 (four suction holes 20-10 in FIG. 63) is formed through the vacuumsuction plate 20-6. A groove pattern 20-16 including concentric groovesis radially and circumferentially formed on a surface of the vacuumsuction plate 20-6. A material of the vacuum suction plate 20-6 may be arubber material, or a resin material such as a PEEK material. However,the rubber material may have the possibility of difficulty of wafer Wrelease by sticking the wafer W to the rubber material or contaminationof the back surface of the wafer W. In consideration of thispossibility, for example, the surface of the rubber material may besubjected to a treatment such as surface roughening processing orprovision of a coating material. On the other hand, the resin materialmay cause insufficient vacuum suction or damage incurred on the backsurface of the wafer W depending on hardness and workability of thematerial. In consideration of this influence, the suction surface may beprovided with a protection film, a coating material, or the like.

The catalyst holding unit 30 according to the embodiment illustrated inFIGS. 1 and 2 is configured to hold a catalyst 31 at a lower endthereof. In the present embodiment, the catalyst 31 is smaller than thewafer W. More specifically, a projected area of the catalyst 31, whichis defined by projecting the catalyst 31 from the catalyst 31 toward thewafer W, is smaller than an area of the wafer W. Further, the catalystholding unit 30 is configured rotatably around an axis AL2 by a drivingunit, i.e., an actuator (not illustrated). Further, the catalyst holdingunit 30 include a motor and an air cylinder (not illustrated) forsliding the catalyst 31 of the catalyst holding unit 30 in contact withthe wafer W, at a swing arm 50 thereof, which will be described below.Next, the processing liquid supply unit 40 is configured to supply theprocessing liquid onto the surface of the wafer W. In FIGS. 1 and 2, thesubstrate processing apparatus 10 includes the single processing liquidsupply unit 40, but may include a plurality of processing liquid supplyunits 40. In this case, different kinds of processing liquid may besupplied from the processing liquid supply units, respectively. Further,if the present substrate processing apparatus 10 is supposed to cleanthe front surface of the wafer W after the etching processing, acleaning chemical or water may be supplied from the processing liquidsupply unit 40. Next, the swing arm 50 is configured swingably around arotational center 51 and is further configure vertically movably by adriving unit, i.e., an actuator (not illustrated). The catalyst holdingunit 30 is rotatably mounted at a distal end (an opposite end from therotational center 51) of the swing arm 50.

FIGS. 3(a) and (b) are schematic cross-sectional views illustratingdetails of the catalyst holding unit 30. As illustrated in FIG. 3(a),the catalyst holding unit 30 includes an elastic member 32 for holdingthe catalyst 31. The elastic member 32 is made of an elastic film, and apressure chamber 33 is formed inside the elastic member (elastic film)32. A layer of the catalyst 31 is formed on an outer surface of theelastic film 32. In the present embodiment, the catalyst 31 is depositedonto the outer surface of the elastic member 32. Further, examples of amethod for depositing the catalyst 31 include a physical vapordeposition method such as resistive heating vapor deposition and sputtervapor deposition, and a chemical vapor deposition method such as CVD.Further, the catalyst 31 may be deposited by another deposition method,such as electrolytic plating and non-electrolytic plating. Further,desirably, a thickness of the deposited catalyst is approximately 100 nmto several dozen .mu.m. The reason therefor is as follows. An extremelythin thickness of the deposited catalyst leads to the necessity ofreplacing the catalyst frequently due to deterioration of the catalystworn when the catalyst is in contact with the wafer W with a relativemotion generated therebetween. On the other hand, a great thickness ofthe deposited catalyst leads to rigidity of the catalyst itself that isenhanced enough to dominate the elasticity of the elastic member whenthe catalyst and the wafer W are in contact with each other, resultingin deterioration of adhesibility to the wafer W that can be establishedwith the aid of the elasticity owned by the elastic member. The presentdeposition may fail to achieve sufficient adhesibility to the catalyst31 depending on the kind of the elastic member 32. In this case, forexample, an adhesive layer, such as carbon, titan, chrome, and tantalum,may be formed on the elastic member 32 in advance and the catalyst 31may be formed after that to improve the adhesibility between the elasticmember 32 and the catalyst 31. Alternatively, the catalyst 31 preparedin the form of a plate may be fixed to the elastic member 32.Alternatively, the catalyst 31 may be formed by impregnation of theelastic member 32 with the catalyst 31, or may be formed from a mixtureof an elastic member material and a catalyst material. The pressurechamber 33 is configured to control a contact pressure between theprocessing target region of the wafer W and the catalyst 31 by controlof fluid (air in the present example, but may be nitrogen gas or thelike) supplied into the pressure chamber 33 by a fluid source (notillustrated). According to this configuration, when the processingtarget region of the wafer W and the catalyst 31 are brought intocontact with each other, the elastic member 32 is deformed, which allowsthe catalyst 31 to evenly contact the wafer W in conformity with theshape of the wafer W (warpage and the like of the wafer W), resulting insucceeding in etching a contact portion between the catalyst 31 and thewafer W at an uniform etching rate.

In the present embodiment, the pressure chamber 33 has a substantiallycuboid shape or cylindrical shape as illustrated in FIG. 3(a). However,the shape of the pressure chamber 33 may be any arbitrary shape. Forexample, the pressure chamber 33 may have a circular arc shape or asemi-circular shape as illustrated in FIG. 3(b). The use of a simpleshape for the pressure chamber 33 in this manner allows the catalyst 31and the wafer W to be kept in contact with each other in a further evenmanner.

FIG. 4 is a schematic cross-sectional view illustrating details of acatalyst holding unit 30 a as another embodiment. The catalyst holdingunit 30 a includes an elastic member 32 a. The elastic member 32 a isconfigured as a spherical member. A layer of a catalyst 31 a is formedon an outer surface of the elastic member 32 a. The elastic member 32 ais rotatably held by a support frame 34 a with a bottom of the elasticmember 32 a exposed. According to this configuration, when the catalystholding unit 30 a and the substrate holding unit 20 are moved relativeto each other, the elastic member 32 a rotates according to thisrelative movement. According to this configuration, when the processingtarget region of the wafer W and the catalyst 31 a are brought intocontact each other, the elastic member 32 a is deformed, which allowsthe catalyst 31 a to evenly contact the wafer W in conformity with theshape of the wafer W (the warpage and the like of the wafer W),resulting in succeeding in etching the contact portion between thecatalyst 31 and the wafer W at an uniform etching rate. Further, thisconfiguration can reduce friction between the processing target surfaceof the wafer W and the catalyst 31 a when the substrate holding unit 20and the catalyst holding unit 30 a are moved relative to each other.Therefore, the processing target surface can be prevented from beingdamaged or can be kept less damaged from the friction. Further, in thepresent embodiment, the catalyst holding unit 30 a includes a pressureadjustment portion 35 a. In the present embodiment, the pressureadjustment portion 35 a is made of an elastic film with a pressurechamber formed therein, similarly to the above-described elastic member32. The pressure adjustment portion 35 a is configured to adjust thecontact pressure between the processing target region of the wafer W andthe catalyst 31 a by an adjustment of a force pressing the elasticmember 32 a toward the wafer W side with the aid of fluid supplied froma fluid source (not illustrated). The pressure adjustment portion 35 amay be an elastic member prepared in another form, such as a platespring. The elastic member 32 a may be pressed toward the wafer W sidein a contactless manner, like an air bearing.

Exemplary candidates of the materials of the elastic members 32 and 32 aillustrated in FIGS. 3(a) and (b), and 4 include nitrile rubber,hydrogenated nitrile rubber, fluorine-contained rugger, silicon rubber,ethylene-propylene rubber, chloroprene rubber, acrylic rubber, butylrubber, urethane rubber, isoprene rubber, styrene-butadiene rubber,butadiene rubber, polyethylene rubber, epichlorohydrin rubber,polytetrafluoroethylene, polytrifluorochloroethylene, perfluoroalkyl,fluorinated ethylene propylene, polycarbonate, polyethylene, vinylchloride, polymethylmethacrylate (acrylic), polypropylene, polyetherether ketone, and polyimide.

FIG. 5 is a schematic cross-sectional view illustrating details of acatalyst holding unit 30 b as another embodiment. The catalyst holdingunit 30 b includes a sponge 32 b having pores. A layer of a catalyst 31b is formed on an outer surface of the sponge 32 b. A plurality of bores36 b is formed in the catalyst 31 b. Further, in this example, thesubstrate processing apparatus 10 also includes a processing liquidsupply unit 40 b in the catalyst holding unit 30 b. The processingliquid supply unit 40 b is configured to supply the processing liquid PLinto the sponge 32 b. In the present embodiment, the catalyst holdingunit 30 b is vertically moved, which adjusts a contact pressure betweenthe catalyst 31 b and the wafer W. According to this configuration, thesponge 32 b is deformed, which allows the catalyst 31 to evenly contactthe wafer W, resulting in succeeding in etching a contact portion at anuniform etching rate. In addition, the sponge 32 b is flexible, so thatthe semiconductor material, which is the processing target surface, canbe prevented from being damaged or can be kept less damaged from thefriction with the catalyst. Further, the processing liquid PL issupplied from inside the sponge 32 b to the contact portion between theprocessing target surface of the wafer W and the catalyst 31 b, whichallows the processing liquid PL to be supplied only by a required amountdirectly to the contact portion, resulting in succeeding in reducing aconsumed amount of the processing liquid PL. The supply via theabove-described processing liquid supply unit 40 may be employed inplace of the processing liquid supply unit 40 b. In this case, thecatalyst 31 b does not have to have the bores 36 b. Further, althoughnot illustrated, a CMP pad with the catalyst deposited on a surfacethereof may be used as one example of the elastic member 32. Examples ofthe CMP pad include an unwoven pad impregnated with foamed polyurethane,polyurethane, or the like. All of these materials have sufficientelasticity against the contact with the processing target surface of thewafer W, and therefore can be used as the elastic member 32.

FIG. 6 is a schematic cross-sectional view illustrating details of acatalyst holding unit 30 c as another embodiment. The catalyst holdingunit 30 c includes an elastic member 32 c. A plurality of grooves 37 cis formed on a bottom surface (a surface facing the wafer W) of theelastic member 32 c. Catalysts 31 c are embedded in the plurality ofgrooves 37 c, respectively. In the present embodiment, the catalysts 31c have concentrically arranged ring-like shapes. This configurationallows the catalysts to be arranged in a specific distribution on thecontact surface between the elastic member and the semiconductormaterial on the substrate, thereby allowing the adjustment of etchingamount within the contact portion with the catalysts.

FIG. 7 is a schematic cross-sectional view illustrating details of acatalyst holding unit 30 d as another embodiment. The catalyst holdingunit 30 d includes a plurality of elastic members 32 d. In other words,the catalyst holding unit 30 d is divided into a plurality of regions.Each of the elastic members 32 d is made of an elastic film similarly tothe embodiment illustrated in FIG. 3, and a pressure chamber 33 d isformed inside the elastic member (elastic film) 32 d. A layer of acatalyst 31 d is formed on an outer surface of the elastic film 32 d. Inthe present embodiment, the elastic members 32 d are arrangedconcentrically, and the elastic members 32 d each have a ring-like shapeexcept for the elastic member 32 d located at a center. A pressureapplied to each of the elastic members 32 d is adjusted by supply offluid. According to this configuration, the processing target region ofthe wafer W and the catalyst 32 d can be brought into contact with eachother with a pressure controlled for each of the elastic members 32 d,which allows the catalyst and the wafer W to be brought into contactwith each other in a manner controlled for each of the regions.

In the embodiments illustrated in FIGS. 3 to 7, a groove form may beprovided on the surface of the elastic member. This groove facilitatesintroduction of the processing liquid onto the contact portion betweenthe catalyst and the wafer W and substitution thereon, thereby allowingthe wafer W to be etched at a higher etching rate and with improvedstability of etching rate.

As one embodiment, the groove formed on the surface of the catalyst 31or the elastic member 32 is formed so as to extend in a direction in theplane of the catalyst 31, and is formed so as to allow the processingliquid PL to flow in the plane of the wafer W between the catalyst 31and the wafer W with the catalyst 31 and the wafer W in contact witheach other. As one embodiment of the groove form, the groove form hassuch a trapezoidal shape in cross-section that a width of the groove isgreater at an opening of the groove than at a bottom of the groove (forexample, refer to FIGS. 29 and 30). Therefore, when the catalyst 31 andthe wafer W are in contact with each other, the groove form can bemaintained without being squeezed, thereby maintaining the supply of theprocessing liquid PL to between the catalyst 31 and the wafer W.Further, as one embodiment, the groove is formed on the surface of theelastic member 32 so as to define a pattern including a plurality ofconcentric circles or a plurality of radial lines. As one embodiment,the groove is formed on the surface of the elastic member so as todefine a pattern including pluralities of parallel lines extending inintersecting different directions, or a helical pattern. Anotherarbitrary width and pattern than the above-described examples can beused as the width and the pattern of the groove.

FIG. 54 is a schematic side view illustrating the catalyst holding unit30 as one embodiment. As illustrated in FIG. 54, the catalyst holdingunit 30 includes a catalyst holding member 32 (for example, the elasticmember 32). A resin film 32-2 is attached to the catalyst holding member32. The catalyst 31 is held on a surface of the resin film 32-2 that islocated opposite from the catalyst holding member 32. The resin film32-2 can be detached from the catalyst holding member 32 together withthe catalyst 31. Therefore, the catalyst holding unit 30 according tothe embodiment illustrated in FIG. 54 allows the catalyst holding member32 to be repeatedly used by replacement of the film 32-2. If thecatalyst holding member 32 is made of, for example, an elastic member,the surface of the catalyst holding member 32 may be roughened.Attaching the film 32-2 to the catalyst holding member 32 like thepresent embodiment can eliminate the roughness of the surface of thecatalyst holding member 32, thereby making the surface of the catalyst31 more flat. Further, the elastic member 32 normally exhibitselasticity in all directions, so that the catalyst 31 may be torn whenthe elastic member 32 is extended or contracted in a direction in theplane of the catalyst 31 if the catalyst 31 is held on the surface ofthe elastic member 32. The resin film 32-2 is less extendable andcontractable in a direction in the plane of the film than the elasticmember 32, so that attaching the film 32-2 to the catalyst holdingmember 32 can prevent the catalyst holding member 32 from being extendedand contracted in the in-plane direction. As a result, this embodimentcan prevent the catalyst 31 held on the film 32-2 from being torn, whilemaintaining the elasticity of the elastic member 32 in a directionperpendicular to the plane of the film 32-2, thereby allowing thecatalyst 31 to evenly contact the wafer W in conformity with the shapeof the wafer W.

FIG. 55 is a schematic side view illustrating the catalyst holding unit30 as one embodiment. The catalyst 31 according to the embodimentillustrated in FIG. 55 is held on the resin film 32-2, similarly to theembodiment illustrated in FIG. 54. However, the resin film 32-2according to the embodiment illustrated in FIG. 55 includes a groovepattern formed thereon, unlike the embodiment illustrated in FIG. 54.The catalyst 31 is held on this groove pattern. This groove is formed soas to extend in a direction in the plane of the film 32-2 and thecatalyst 31, and is formed so as to allow the processing liquid PL toflow in the plane of the wafer W between the catalyst 31 and the wafer Wwith the catalyst 31 and the wafer W in contact with each other. Anarbitrary shape can be used as the groove form, but the groove can beformed into such a trapezoidal shape in cross-section that a width ofthe groove is wider at an opening of the groove than at a bottom of thegroove, similarly to the above-described embodiment (for example, referto FIGS. 29 and 30). Alternatively, a plurality of through-holes may beformed at positions corresponding to outlet/inlets 30-40 a illustratedin FIG. 57 instead of the groove pattern of the film 32-2.

FIG. 56 is a schematic side view illustrating the catalyst holding unit30 as one embodiment. In the embodiment illustrated in FIG. 56, thecatalyst 31 is held on the resin film 32-2, similarly to the embodimentillustrated in FIG. 55. In the embodiment illustrated in FIG. 56, theresin film 32-2 has a two-layered structure. No groove pattern is formedon a first layer resin film 32-2 a located on a surface facing thecatalyst holding member 32. An arbitrary groove pattern can be formed ona second layer resin film 32-2 b located on a surface facing thecatalyst 31. In this case, the groove pattern is formed through thesecond layer resin film 32-2 b. It may be difficult to accurately formthe groove on the film while keeping an even depth, but this embodimentallows the groove form to be formed with an even depth equal to athickness of the second layer resin film 32-2 b.

Each of the catalyst holding units 30 according to the embodimentsillustrated in FIGS. 54 to 56 can be configured to have any feature ofthe catalyst holding units disclosed herein. For example, the catalystholding unit 30 can be configured to supply the processing liquid PLfrom inside the catalyst holding unit 30 to the surface of the catalyst31, like the embodiments illustrated in FIGS. 29 and 30. In this case,in the embodiments illustrated in FIGS. 54 to 56, the catalyst holdingmember 32, the resin film 32-2, and the catalyst 31 are provided with aprocessing liquid supply passage 30-40 and a supply port 30-42 fordelivering the processing liquid PL.

Each of the catalyst holding units 30 illustrated in FIGS. 54 to 56 canbe formed by the following procedure. First, the groove pattern isformed on the resin film 32-2. The groove pattern does not have to beformed, if the groove pattern is unnecessary. Next, the catalystmaterial is deposited on the resin film 32-2 with (or without) thegroove pattern formed thereon. The method for depositing the catalystmaterial can be any method described in the present disclosure, or anyknown method. Next, the resin film 32-2 with the catalyst 31 depositedthereon is attached to the catalyst holding member 32 with use of anadhesive, a double-sided tape, or the like.

Each of the catalyst holding units 30 illustrated in FIGS. 54 to 56 isconfigured in such a manner that the replaceable resin film 32-2 isattached to the catalyst holding member 32. However, the measure takento eliminate extremely small protrusions and dents on the surface of thecatalyst holding member 32 to make the surface of the catalyst 31 flatdoes not necessarily have to rely on the resin film 32-2, and also doesnot necessarily have to rely on the replaceable film. For example, glassmay be applied or sprayed, or resin may be applied or sprayed onto thesurface of the catalyst holding member 32, such as the elastic member32. In this case, polyurethane, polyimide, or the like can be used asthe resin. Alternatively, a glass sheet or a metal sheet may be attachedonto the catalyst holding member 32. Besides them, any configuration canbe employed as long as the configuration can make the surface flatterthan the catalyst holding member 32. These configurations do notnecessarily have to be replaceable.

FIG. 57 is a plan view illustrating the catalyst holding unit 30 as oneembodiment, as viewed from the catalyst 31. As illustrated in FIG. 57,the plurality of inlet/outlets 30-40 a, which is used for the processingliquid PL to enter and exit, is formed on the surface of the catalyst 31of the catalyst holding unit 30. FIG. 58 is a cross-sectional viewillustrating one of the inlet/outlets 30-40 a illustrated in FIG. 57. Asillustrated in FIG. 58, the catalyst holding unit 30 includes thecatalyst holding member 32 on which the catalyst 31 is held. Athrough-hole 30-46, which is used for the processing liquid PL to passthrough the catalyst holding member 32, is formed on the catalystholding member 32. A support member 30-48 is disposed on an oppositeside of the catalyst holding member 32 from the catalyst 31. An inletpassage 30-51, which is used to supply the processing liquid PL onto thesurface of the catalyst 31, and an outlet passage 30-53, which is usedto collect the processing liquid PL, are formed in the support member30-48. Both the inlet passage 30-51 and the outlet passage 30-53 areopen to the through-hole 30-46. In the embodiment illustrated in FIGS.57 and 58, the outlet passage 30-53 is arranged so as to surround theinlet passage 30-51. In the embodiment illustrated in FIGS. 57 and 58, agroove pattern, like the groove patterns described in the otherembodiments, is not formed on the surface of the catalyst 31, but agroove pattern may be formed as another embodiment. In the embodimentillustrated in FIGS. 57 and 58, the processing liquid PL can be suppliedonto and collected from the surface of the catalyst 31 via theinlet/outlets 30-40 a, and thus can be substituted on the surface of thecatalyst 31 even with no groove pattern formed or with a groove patternincluding a small number of grooves. If the groove pattern is formed onthe surface of the catalyst 31, the catalyst 31 may be detached from acorner of the groove of the catalyst when the wafer W and the catalyst31 are slidably moved relative to each other while being in contact witheach other. The inlet/outlets 30-40 a of the processing liquid accordingto the embodiment illustrated in FIGS. 57 and 58 allows the catalyst 31to have less corners compared to the formation of the groove pattern,thereby succeeding in reducing the risk of the detachment of thecatalyst 31.

FIGS. 40 and 41 are plan views illustrating the shape of the catalystholding unit 30 as one embodiment. The method of swinging the catalystholding unit 30, which is smaller than the wafer W, on the wafer W asdescribed above may result in a reduction in the etching amount due to areduction in a time for which the catalyst 31 and the wafer W are incontact with each other on an edge side of the wafer W than on otherportions, leading to a difficulty in evenly controlling the etchingamount. In this case, swinging the catalyst 31 so as to move thecatalyst 31 beyond an outer periphery of the wafer W (causing thecatalyst 31 to overhang the wafer W) can increase the contact time forthe purpose of keeping the etching amount even on the edge side of thewafer W. Further, the catalyst holding unit 30 according to theembodiment illustrated in FIGS. 40 and 41 includes the triangle orfan-shaped catalyst holding member 32 (for example, the elastic member32) having two sides having dimensions approximately equal to orslightly longer than a radius of the wafer W to be processed. In thiscase, the wafer W is processed while the catalyst 31 and the wafer W arearranged into contact with each other in such a manner that a vertex ofthe triangle or the fan shape is located around a center of the wafer Wto be processed. This catalyst holding member 32 itself is configurednon-rotatably. Shaping the catalyst holding member 32 in this mannerallows the catalyst 31 to contact the wafer W at each radial position ofthe wafer W at an approximately constant rate of the contact to acircumference of the wafer, thereby keeping the constant time of thecatalyst 31 approximately constant in the radial direction with respectto the rotation of the wafer W even without the catalyst 31 itselfrotated. Therefore, the uniformity of the processing performed on thewafer W can be improved even without requiring a complicated operation.In the embodiment illustrated in FIGS. 40 and 41, the catalyst holdingunit 30 may be configured to include a mechanism for swinging thecatalyst holding unit 30 in the radial direction of the wafer W, likethe mechanism illustrated in the other embodiments (for example, theswinging arm 50). Swinging the catalyst holding unit 30 in the radialdirection of the wafer W can prevent the wafer W from constantlycontacting with the catalyst 31 only at the center of the wafer W.Further, in the embodiment illustrated in FIGS. 40 and 41, a groove,which is used for the processing liquid to pass through the catalyst 31or the catalyst holding member 32, may be formed on the surface of thecatalyst 31 or the catalyst holding member 32, like the groovesdescribed in the other embodiments. The groove in cooperation with theswinging movement of the catalyst holding unit 30 on the wafer W allowsthe processing liquid PL to be sufficiently introduced onto the catalystcontact surface.

FIG. 66 illustrates one embodiment of the catalyst holding unit 30 ofthe substrate processing apparatus according to the present disclosure.The catalyst holding unit 30 can be configured to be able to vibrate thecatalyst 31 held on the catalyst holding unit 30 perpendicularly to thesurface of the wafer W (not illustrated) by application of analternating-current voltage corresponding to a vibration frequency to apiezoelectric element 30-55 installed in the catalyst holding unit 30.Alternatively, the catalyst holding unit 30 may be configured to beentirely vibrated vertically with use of a ball screw 30-57. Regardingother configurations, the features of the embodiments described in thepresent disclosure or known features can be arbitrarily combinedtherefor. The catalyst 31 is vibrated to alternately repeatestablishment of the contact between the catalyst 31 and the surface ofthe wafer W and disconnection of the catalyst 31 from the surface of thewafer W, which reduces the friction due to the contact between thecatalyst 31 and the wafer W, thereby succeeding in reducing the risk ofthe detachment of the catalyst 31 from the catalyst holding member 32.Preferably, the vibration frequency is 10 Hz to 100 kHz. If thevibration frequency is lower than 10 Hz, the wafer W after theprocessing ends up being processed unevenly according to the vibrationfrequency. If the vibration frequency is higher than 100 kHz, cavitationoccurs in the processing liquid PL, and damages the surface of the waferW and the surface of the catalyst 31.

FIGS. 46, 47A, and 48 are schematic side cross-sectional viewsillustrating a configuration of the catalyst holding unit 30 as oneembodiment disclosed in the present disclosure. The catalyst holdingunit 30 according to the present embodiment includes a disk holderportion 30-70 illustrated in FIG. 46, and a catalyzer disk portion 30-72illustrated in FIG. 47A that is attachable to and replaceable from thedisk holder portion 30-70. FIG. 47B is a schematic plan viewillustrating the catalyzer disk portion 30-72 illustrated in FIG. 47A asviewed from the catalyst 31. FIG. 31 illustrates the catalyst holdingunit 30 with the disk holder portion 30-70 and the catalyzer diskportion 30-72 attached to each other. As illustrated in FIG. 46, thedisk holder portion 30-70 includes a head 30-74. A processing liquidsupply passage 30-40, a wiring for a catalyst electrode, and a wiringfor a counter electrode are laid through a center of the head 30-74.Further, a head 30-74 is attached to the swing arm 50 so that the head30-40 is rotatable via a gimbal mechanism 30-32 (for example, aspherical plain bearing). The gimbal mechanism 30-32 can be embodied byusing, for example, a similar mechanism to a disclosure of JapanesePatent Application Public Disclosure No. 2002-210650. As illustrated inFIGS. 47A and 47B, the catalyzer disk portion 30-72 includes thecatalyst holding member 32 (for example, the elastic member 32) and thecatalyst 31 held on the catalyst holding member 32. As illustrated inFIGS. 47A and 47B, the catalyst 31 is electrically connected to acatalyst electrode 30-49. Further, a counter electrode 30-50 is disposedoutside the catalyst holding member 32. The wiring for the catalystelectrode and the wiring for the counter electrode in the disk holderportion 30-70 are electrically connected to the catalyst electrode 30-49and the counter electrode 30-50, respectively, when the disk holderportion 30-70 is connected to the catalyzer disk portion 30-72. Avoltage can be applied from an external power source to between thecatalyst electrode 30-49 and the counter electrode 30-50. Further, thecatalyzer disk portion 30-72 includes a wall 30-52 formed outside thecatalyst holding member 32 and the catalyst 31 so as to surround thecatalyst holding member 32 and the catalyst 31 with a gap generatedtherefrom. A processing liquid holding portion, which holds theprocessing liquid PL, is defined by the wall 30-52 with the catalyst 31and the wafer W in contact with each other. When the disk holder portion30-70 and the catalyzer disk portion 30-72 are connected to each other,a contact probe 30-76, like a probe illustrated in FIG. 48, is used foran electric connection. When the disk holder portion 30-70 and thecatalyzer disk portion 30-72 are connected to each other, the processingliquid supply passage 30-40 extends through the catalyst holding member32 of the catalyze disk portion 30-72, and reaches to the supply port30-42 on the surface of the catalyst 31.

As one embodiment, the catalyst holding unit 30 disclosed in the presentdisclosure can be attached to the swing arm 50. FIG. 59 is a schematicside cross-sectional view illustrating the catalyst holding unit 30attached to the swing arm 50 as one embodiment. As illustrated in FIG.59, the swing arm 50 is entirely covered by a cover 50-2. The catalystholding unit 30 is coupled to a shaft 50-1 via the gimbal mechanism30-32. The shaft 50-1 is rotatably supported by a ball spline 50-4, aslip ring 50-6, and a rotary joint 50-8. A rotary connector may be usedin place of the spring ring 50-6, and the electric connection may berealized in a non-contact manner. The catalyst holding unit 30 can berotated by a rotational motor 50-10. The shaft 50-1 is axially driven byan elevating air cylinder 50-12. The air cylinder 50-12 can be embodiedby using an air bearing cylinder. The use of the air bearing cylindercan reduce sliding resistance, and can also reduce a hysteresis. The aircylinder 50-12 is coupled to the shaft 50-1 via a load cell 50-14, andcan measure a force applied from the air cylinder 50-12 to the shaft50-1 by the load cell 50-14. The swing arm 50 includes the processingliquid supply passage 30-40 so that the processing liquid and/or thewater can be supplied from the supply port 30-42 on the surface of thecatalyst 31 of the catalyst holding unit 30. Alternatively, the catalystholding unit 30 may be configured to supply the processing liquid and/orthe water from outside the catalyst holding unit 30. The swing arm 50can be configured to be connected to a supply source of air or nitrogento supply the air or the nitrogen into the cover 50-2. The CAREprocessing may use a highly corrosive chemical, whereby the pressure inthe cover 50-2 is increased to a higher pressure than the outeratmospheric pressure, which can prevent the processing liquid PL fromentering the cover 50-2.

FIG. 60 schematically illustrates a configuration for controlling apressure with which the catalyst holding unit 30 and the wafer W are incontact with each other by using the swing arm 50 as one embodiment. Asillustrated in FIG. 60, a first pipe line 50-16 a, which is used tosupply air, is connected to one side of surfaces of a piston of the aircylinder 50-12. An electropneumatic regulator 50-18 a, anelectromagnetic valve 50-20 a, and a pressure meter 50-22 a areconnected to the first pipe line 50-16 a. The electropneumatic regulator50-18 a is connected to a PID controller 50-15, and converts an electricsignal received from the PID controller 50-15 into a pneumatic pressure.The electromagnetic valve 50-20 a is a normally closed valve, andpermits the air to flow therethrough when being switched on. Thepressure meter 50-22 a can measure a pressure in the first pipe line50-16 a. A second pipe line 50-16 b, which is used to supply the air, isconnected to the other side of the surfaces of the piston of the aircylinder 50-12. A precision regulator 50-18 b, an electromagnetic valve50-20 b, and a pressure meter 50-22 b are connected to the second pipeline 50-16 b. The electromagnetic valve 50-20 b is a normally openedvalve, and permits the air to flow therethrough when being switched off.The pressure meter 50-22 b can measure a pressure in the second pipeline 50-16 b. The second pipe line 50-16 b is provided with a pneumaticpressure enough to cancel out m2 g+m1 g, which is a weight of the secondpipe line 50-16 b itself from the air cylinder 50-12 to the catalystholding unit 30. The weight m2 g is a weight above the load cell 50-14,and is included in the measurement by the load cell 50-14. The weight m1g is a weight below the load cell 50-14, and is not included in themeasurement by the load cell 50-14. As described above, the forceapplied from the air cylinder 50-12 to the shaft can be measured by theload cell 50-14.

As one embodiment, the pressure with which the catalyst holding unit 30and the wafer W are in contact with each other can be controlled by PIDcontrol. FIG. 61 is a flowchart illustrating a flow of the PID controlthat controls the pressure with which the catalyst holding unit 30 andthe wafer W are in contact with each other as one embodiment. Asillustrated in the flowchart of FIG. 61, a PID controller 50-15 receivesa load instruction SF from the control unit 90 of the substrateprocessing apparatus 10. On the other hand, the PID controller 50-15receives a measured force F from the load cell 50-14. The PID controller50-15 carries out a PID calculation for realizing the received loadinstruction SF within the PID controller. The PID controller 50-15provides a pressure instruction SP to the electropneumatic regulator50-18 a based on a result of the PID calculation. Upon receiving thepressure instruction SP, the electropneumatic 50-18 a activates aninternal actuator to thereby discharge air having a predeterminedpressure P. The electropneumatic regulator 50-18 a holds a pressuresensor therein, and is controlled by feedback control so that thepressure P of the air discharged from the electropneumatic regulator50-18 a matches the pressure instruction SP. This feedback control isperformed according to a relatively high-speed sampling time. The airdischarged from the electropneumatic regulator 50-18 a is supplied tothe air cylinder 50-12, thereby driving the air cylinder. The force Fgenerated by the air cylinder 50-12 is measured by the load cell 50-14.The PID controller 50-15 compares the measured value F received from theload cell 50-14 with the load instruction SF received from the controlunit 90, and repeats the PID calculation and the processing after thatuntil the measured value F matches the load instruction SF. Thisfeedback control is performed according to a lower-speed sampling timethan the above-described inner feedback control of electropneumaticregulator 50-18 a. The force pressing the catalyst holding unit 30against the wafer W is monitored and controlled by the feedback controlwith use of the load cell 50-14 and the PID controller 50-15 in thismanner, which allows the catalyst holding unit 30 to be constantlypressed with an optimum force. This control can be modified in such amanner that the load instruction varies in a stepwise manner (forexample, every 0.1 seconds) to reach the final load instruction SF so asto control a speed at which the air cylinder 50-12 is driven.

Any of the catalyst holding units 30 disclosed in the present disclosurecan include a catalyst temperature control mechanism for controlling atemperature of the catalyst 31. For example, a Peltier element can beused as the catalyst temperature control mechanism. FIG. 65 is aschematic side view illustrating the catalyst holding unit 30 as oneembodiment. In the embodiment illustrated in FIG. 65, the catalyst 31 isheld on the surface of elastic member 32. A support member 32-4 isdisposed on a surface of the elastic member 32 opposite from the surfacewhere the catalyst 31 is held. A Peltier element 32-6 is attached to thesupport member 32-4. Desirably, the support member 32-4 is made of ahighly thermally conductive material, and can be made of, for example,metal or ceramic. In the present embodiment, an etching rate can beincreased by warming the catalyst 31 with use of the Peltier element32-6. Conversely, step removability by the etching can be enhanced bycooling the catalyst 31 with use of the Peltier element 32-6 to increasethe hardness of the elastic member 32. Further, both the etching rateand the step removability can be improved by warming the catalyst 31 atthe time of a start of the etching and cooling the catalyst 31 after theetching advances to some degree.

Next, the conditioning unit 60 is configured to condition the surface ofthe catalyst 31 at a predetermined timing. This conditioning unit 60 isdisposed outside the wafer W held on the substrate holding unit 20. Thecatalyst 31 held on the catalyst holding unit 30 can be positioned abovethe conditioning unit 60 by the swing arm 50.

The control unit 90 controls an entire operation of the substrateprocessing apparatus 10. Further, the control unit 90 also controls aparameter regarding a condition of the etching processing to beperformed on the wafer W. Examples of such a parameter include acondition of a motion such as a rotation and an angular rotation of thesubstrate holding unit, the pressure with which the catalyst 31 and thewafer W are in contact with each other, a condition of the swingingmotion of the swing arm 50, a condition of the supply such as a flowamount and a temperature of the processing liquid to be supplied fromthe processing liquid supply unit 40, a condition of application of avoltage of a potential adjustment unit 580, which will be describedbelow, and a condition of conditioning the surface of the catalyst bythe conditioning unit 60.

A flow of the etching processing that is performed on the substrate bythe present substrate processing apparatus 10 will be described. First,the wafer W is held onto the substrate holding unit 20 by the substratetransfer unit with the aid of the vacuum suction. Next, the processingliquid is supplied from the processing liquid supply unit 40. Next,after the catalyst 31 on the catalyst holding unit 30 is placed at apredetermined position on the wafer W by the swing arm 50, the verticalmovement of the catalyst holding unit 30 brings the catalyst 31 intocontact with the processing target region of the wafer W, and alsoadjusts the pressure therebetween to a predetermined contact pressure.Further, at the same time as this contact operation or after thecontact, the relative movement between the substrate holding unit 20 andthe catalyst holding unit 30 is started. In the present embodiment, thisrelative movement is realized by the rotation of the substrate holdingunit 20, the rotation of the catalyst holding unit 30, and the swingingmotion by the swing arm 50. The relative movement between the substrateholding unit 20 and the catalyst holding unit 30 can be realized by atleast one of a rotational motion, a translation motion, a circular arcmotion, a reciprocating motion, a scroll motion, and an angularrotational motion (a motion of rotating only by a predetermined anglesmaller than 360 degrees) of at least one of the substrate holding unit20 and the catalyst holding unit 30.

By this operation, an etchant generated from an action of the catalyst31 acts on the surface of the wafer W at the portion where the wafer Wand the catalyst 31 are in contact with each other with the aid of acatalytic action of the catalyst 31, by which the surface of the wafer Wis etched and removed. The processing target region of the wafer W canbe made of an arbitrary single material or a plurality of arbitrarymaterials, and examples of the material(s) include an insulating filmrepresented by an SiO.sub.2 material and a Low-k material, wiring metalrepresented by Cu and W, barrier metal represented by Ta, Ti, TaN, TiN,Co, and the like, and a III-V series material represented by GaAs andthe like. Further, the material of the catalyst 31 can be, for example,precious metal, transition metal, a ceramic solid catalyst, a basicsolid catalyst, or an acid solid catalyst. Further, the processingliquid PL can be, for example, an oxygen solution, ozone water, acid, analkali solution, H.sub.2O.sub.2 water, and a hydrofluoric acid solution.The catalyst 31 and the processing liquid PL can be arbitrary setaccording to the material of the processing target region of the waferW. For example, if the material of the processing target region is Cu,an acid solid catalyst and ozone water may be used as the catalyst 31and the processing liquid PL, respectively. Further, if the material ofthe processing target region is SiO.sub.2, platinum or nickel, and acidmay be used as the catalyst 31 and the processing liquid PL,respectively. Further, if the material of the processing target regionis the III-V series metal (for example, GaAs), iron and H.sub.2O.sub.2water may be used as the catalyst 31 and the processing liquid PL,respectively.

Further, if a plurality of materials to be etched is mixed together inthe processing target region of the wafer W, a plurality of catalystsand/or a plurality of kinds of processing liquid may be used for theindividual materials. Specific examples of how to actually constructthis configuration regarding the catalyst side include (1) constructingthis configuration with use of a single catalyst holding unit with theplurality of catalysts mounted thereon, and (2) constructing thisconfiguration with use of a plurality of catalyst holding units with thedifferent catalysts mounted thereon, respectively. In the configuration(1), the plurality of catalysts may be a mixture or a compound includinga plurality of catalyst materials. Further, regarding the processingliquid side, if the configuration (1) is employed on the catalyst side,a mixture of elements suitable for etching materials to be etched by theindividual catalyst materials may be used as the processing liquid.Alternatively, if the configuration (2) is employed on the catalystside, processing liquid suitable for etching a material that should beetched may be supplied to around each of the catalyst holding units.However, the processing liquid may be deteriorated due to the mixturedepending on the kind of the processing liquid. In this case, thisdeterioration can be avoided with use of a processing liquid holdingunit 270, which will be described below in a fourth embodiment, so thatregions where the processing liquid exists are localized.

Further, in the present embodiment, because the catalyst 31 is smallerthan the wafer W, the catalyst holding unit 30 swings on the entiresurface of the wafer W when the entire surface of the wafer W should beprocessed by the etching processing. Then, the present CARE methodetches the wafer W only at the portion in contact with the catalyst,whereby the distribution of the etching amount in the plane of the waferW is largely affected by a distribution of the contact time between thewafer W and the catalyst 31 in the plane of the wafer. Regarding that,varying a speed at which the swing arm 50 swings in the plane of thewafer can even out the distribution of the contact time. Morespecifically, a range where the swing arm 50 swings in the plane of thewafer W is divided into a plurality of sectors, and the swing arm 50 isarranged to swing at a controlled speed in each section.

For example, if the catalyst holding unit 30 swings along such a trackthat the catalyst holding unit 30 passes through the center of the waferW with the wafer W rotating at a constant rotational speed asillustrated in FIG. 22, some single point in the catalyst contacts thewafer W for a time inversely proportional to the radius of the wafer W.Therefore, basically, the time for which the catalyst 31 and the wafer Ware in contact with each other can be kept constant by also adjustingthe distribution of the swing speed in such a manner that the swingspeed slows down so as to be inversely proportional to the radius of thewafer W. However, the catalyst 31 of the catalyst holding unit 30 has apredetermined size and a predetermined radius, and should overhangbeyond the end of the wafer W to etch the end of the wafer W. This meansthat the catalyst 31 and the wafer W contact with each other over avariable area. Therefore, it is desirable to adjust the time for whichthe wafer W is in contact with the catalyst 31 at each point in theplane of the wafer W by adjusting the speed at which the catalystholding unit 30 swings, so as to correct such a variation in the area.FIG. 23 illustrates a graph indicating etching rate of wafer W when thecatalyst holding unit 30 swings in the plane of the wafer W at aconstant speed, and when the swing range is divided into eleven sectionsand the swing speed is optimized for each section. As indicated by thegraph illustrated in FIG. 23, when the catalyst holding unit 30 swingsat a constant speed, the catalyst 31 and the wafer W contact with eachother at the center of the wafer W for a longer time, and the etchingrate increases at the center of the wafer W, as a result of which theetching rate exhibits a further uneven in-plane distribution. On theother hand, when the range where the catalyst holding unit 30 swings isdivided into the eleven sectors and the swing speed is adjusted for eachsection, the catalyst 31 and the wafer W can be in contact with eachother for a time that is further evened out. This leads to improvementof the distribution of the etching rate in the plane of the wafer W. Inthe example of the optimization illustrated in FIG. 23, the range wherethe catalyst holding unit 30 swings is divided into the eleven sections,but increasing the number of divided sectors (for example, thirtysectors) can realize a more fine adjustment of the swing speed and thusachieve an adjustment of the distribution of the time for which thecatalyst 31 and the wafer W are in contact with each other, therebycontributing to further improving the uniformity of etching rate withinthe wafer W.

The substrate processing apparatus that processes the wafer W whileswinging, on the wafer W, the catalyst holding unit 30 having a smallerradius than the wafer W to be processed may require the catalyst holdingunit 30 to overhang out of the wafer W. If the catalyst holding unit 30is caused so as to overhang from the wafer W, the catalyst holding unit30 may tilt with respect to the plane of the wafer W because of absenceof a structure for supporting the catalyst holding unit 30 outside thewafer W. FIG. 27 is a side view illustrating the catalyst holding unit30 tilting when overhanging beyond the wafer W. As illustrated in FIG.27, when the catalyst holding unit 30 overhangs beyond the wafer, thecontact pressure is concentrated on around the edge of the wafer W. Ifthe catalyst 31 is held on the elastic member 32, the elastic member 32is deformed according to the increase in the contact pressure, whichwidens the area over which the catalyst 31 and the wafer W are incontact with each other, resulting in an increase in the etching ratearound the edge of the wafer W. Therefore, if the surface of thecatalyst 31 and the processing target surface of the wafer W are not inparallel with each other, the catalyst 30 and the wafer W fail to mainthe even contact distribution therebetween, whereby the etching rate ofthe wafer W exhibits a further uneven in-plane distribution. Especially,if the catalyst holding unit 30 like the catalyst holding unit 30illustrated in FIG. 27 overhangs beyond the wafer W, the catalystholding unit 30 may largely tilt, and the mechanism that attempts tomaintain the contact with the wafer W with use of the elastic member 32like the above-described elastic member 32 may be unable to necessarilysufficiently maintain uniformity of the etching rate of the wafer W.Therefore, one embodiment of the substrate processing apparatusdisclosed in the present disclosure proposes the following solution tothis problem.

FIG. 24 is a schematic side view illustrating the substrate holding unit20 and the catalyst holding unit 30 as one embodiment of the substrateprocessing apparatus 10. In the embodiment illustrated in FIG. 24, thesubstrate holding unit 20 includes a wafer holding stage 20-2 having awafer holding surface for holding the wafer W. As illustrated in FIG.24, in the present embodiment, the wafer holding surface of the waferholding stage 20-2 is larger than the area of the surface of thecatalyst 31 of the catalyst holding unit 30. The wafer holding stage20-2 includes an extension portion 20-4, which will be located outsidethe outer periphery of the wafer W when the wafer W to be processed ismounted thereon. A radial dimension of this extension portion 20-4 maybe an arbitrary dimension, but is desirably approximately equal to orlarger than a radius of the surface of the catalyst holding unit 30 thatholds the catalyst 31.

FIG. 25 is a schematic top view illustrating the substrate holding unit20 and the catalyst holding unit 30 illustrated in FIG. 24. In theexample illustrated in FIG. 25, the extension portion 20-4 of the waferholding stage 20-2 can be configured integrally with the wafer holdingstage 20-2, and can also be provided around the entire outer peripheryof the wafer holding stage 20-2. In the present example, the extensionportion 20-4 of the wafer holding stage 20-2 is configured integrallywith the wafer holding stage 20-2, but may be configured in such amanner that they are individually independent structures.

FIG. 26 is a schematic top view illustrating the substrate holding unit20 and the catalyst holding unit 30 as another embodiment of thesubstrate processing apparatus 10. As illustrated in FIG. 26, theextension portion 20-4 of the wafer holding stage 20-2 is configured asa separate structure from the wafer holding stage 20-2, and is fixed tothe substrate processing apparatus 10 while the wafer holding stage 20-2is rotatably disposed. This configuration can reduce an area of theextension portion 20-4, thereby contributing to efficient utilization ofa space occupied by the entire substrate processing apparatus.

In embodiments including the extension portion 20-4 of the wafer holdingstage 20-2, like the embodiments illustrated in FIGS. 24 to 26, thecatalyst holding unit 30 is supported by the extension portion 20-4 evenwhen the catalyst holding unit 30 is caused to overhang beyond the waferW. Therefore, such embodiments allow the catalyst holding unit 30 tokeep constant the status in which the catalyst 31 is in contact with thewafer W (for example, the distribution of the contact pressure) evenwhen overhanging, resulting in a capability to maintain the uniformityof the etching rate of the wafer W.

The extension portion 20-4 of the wafer holding stage 20-2 can also beprovided with the conditioning unit 60 having any feature described inthe present disclosure. Configuring the extension portion 20-4 in thismanner contributes to efficient utilization of the space occupied by theentire apparatus.

FIG. 28 is a schematic side view illustrating the catalyst holding unit30 as one embodiment of the substrate processing apparatus 10. In theembodiment illustrated in FIG. 28, the catalyst holding unit 30 includesa tilt sensor 30-10 for detecting a tilt of the surface of the catalyst31. The tilt of the catalyst 31 with respect to the surface of the waferW held on the substrate holding stage 20-2 can be detected by the tiltsensor 30-10. For example, the tile that may occur, for example, whenthe catalyst holding unit 30 overhangs beyond the wafer W (refer to FIG.27), can be detected.

In the embodiment illustrated in FIG. 28, the catalyst holding unit 30includes a tilt correction mechanism for correcting the tilt of thesurface of the catalyst 31 of the catalyst holding unit 30. As aspecific configuration of the tilt correction mechanism, this mechanismcan use an air cylinder mechanism 30-18 disposed around the edge of thecatalyst holding member 32 (for example, the elastic member 32) forexample, as illustrated in FIG. 28. The air cylinder mechanism 30-18includes an air cylinder 30-20, a piston 30-22 having one end configuredto be pneumatically driven into the air cylinder 30-20, and a pressingmember 30-24 coupled with the other end of the piston 30-22. Thepressing member 32-24 includes a roller 30-26. The roller 30-26rotatably supports the opposite surface of the catalyst holding member32 from the surface thereof where the catalyst 31 is held. In theembodiment illustrated in FIG. 28, a plurality of air cylindermechanisms 30-18 (for example, two air cylinder mechanisms 30-18) isdisposed on radially opposite sides of the catalyst holding member 32.These air cylinder mechanisms may be configured rotatably in acircumferential direction of the catalyst holding member 32 whilemaintaining relative positions therebetween.

The catalyst holding unit 30 according to the embodiment illustrated inFIG. 28 includes another cylinder mechanism 30-30 for moving thecatalyst holding member 32 in the direction perpendicular to the surfaceof the wafer W to be processed. In the illustrated embodiment, the aircylinder mechanism 30-30 is coupled with the catalyst holding member 32via the gimbal mechanism 30-32. Further, the catalyst holding member 32is configured rotatably in the circumferential direction of the catalystholding member 32.

In the embodiment illustrated in FIG. 28, the tile of the catalystholding member 32 is detected by the tilt sensor 30-10, for example,when the catalyst holding unit 30 overhangs beyond the wafer W while thewafer W is processed. The tilt of the catalyst holding member 32 can becorrected by the tilt correction mechanism, such as the air cylindermechanism 30-18, according to the detected tilt. Therefore, thisembodiment allows the catalyst holding unit 30 to keep constant thestatus in which the catalyst 31 and the wafer W are in contact with eachother (for example, the distribution of the contact pressure), resultingin a capability to improve the uniformity of etching rate of the waferW.

According to the above-described substrate processing apparatus 10 usingthe CARE method, the wafer W is etched only at the portion in contactwith the catalyst 31, and is not etched at other portions out of contactwith the catalyst 31. Therefore, only protrusions of the wafer W havingthe rough surface are selectively chemically removed, so that theplanarization processing can be performed. Further, the wafer W ischemically polished, so that the processed surface of the wafer W isless likely damaged. Theoretically, the wafer W and the catalyst 31 donot necessarily have to contact each other, and may be merely located inproximity to each other. In this case, “located in proximity to eachother” can be defined to mean being located sufficiently close to eachother to allow the etchant generated from the catalytic reaction toreach the processing target region of the wafer W. A distance betweenthe wafer W and the catalyst 31 when they are separated from each othercan be, for example, 50 nm or shorter.

After the etching processing according to the present CARE method, thewafer W is cleaned by the substrate cleaning unit, but may be cleanedwithin the present substrate processing apparatus 10. For example, thewafer W is cleaned by being rotated while wafer cleaning liquid or wateris supplied from the processing liquid supply unit 40 thereto.

Further, because an etching product is adhered onto the surface of thecatalyst 31, an etching capability of the substrate processing apparatus10 should be gradually deteriorating. Therefore, the control unit 90retracts the catalyst holding unit 30 to the conditioning unit 60 tocondition the catalyst 31 at a predetermined timing. The predeterminedtiming can be set to a timing during an interval of the etchingprocessing (a time period during which the processed wafer W istransferred out, and an unprocessed wafer W is mounted on the substrateholding unit 20), each time a predetermined operation time has elapsed,or the like. In the present embodiment, the conditioning unit 60includes a scrub cleaning unit 61. The scrub cleaning unit 61 includes ascrub member, such as a sponge and a brush, and cleans the catalyst 31by scrubbing it under existence of cleaning liquid supplied form acleaning liquid supply unit 62. At this time, a contact between thecatalyst holding unit 30 and the scrub member of the scrub cleaning unit61 is established by a vertical movement of the catalyst holding unit 30side or the scrub member. Further, when conditioning the catalyst 31,the conditioning unit 60 causes a relative motion such as a rotation ofat least one of the catalyst holding unit 30 or the scrub member of thescrub cleaning unit 61. As a result, this embodiment can recover thesurface of the catalyst 31 with the etching product adhered thereon toan active status, and can also prevent or reduce the damage that theprocessing target region of the wafer W might be incurred due to theetching product.

The conditioning unit 60 can be embodied with use of not only theabove-described configuration but also various configurations. Forexample, basically, water may be used as the cleaning liquid in thepresent scrub cleaning unit 61, but it may be difficult to remove theetching product only by the scrub cleaning depending on a type of theetching product. In this case, a chemical capable of removing theetching product may be supplied as the cleaning liquid. For example, ifthe etching product is silicate salt (SiO.sub.2), hydrofluoric acid maybe used as the chemical. Alternatively, the conditioning unit 60 mayinclude an electrolytic regeneration unit configured to remove theetching product adhered on the surface of the catalyst 31 with the aidof an electrolytic action. More specifically, the electrolyticregeneration unit includes an electrode configured to be electricallyconnectable to the catalyst 31, and is configured to remove the etchingproduct adhered on the surface of the catalyst 31 by applying a voltageto between the catalyst and the electrode.

Alternatively, the conditioning unit 60 may include plating regenerationunit configured to regenerate the catalyst 31 by newly plating thecatalyst 31. This plating regeneration unit includes an electrodeconfigured to be electrically connectable to the catalyst 31, and isconfigured to plate and regenerate the surface of the catalyst 31 byapplying a voltage to between the catalyst 31 and the electrode with thecatalyst 31 immersed in liquid containing a catalyst for regeneration.

FIG. 17A is a schematic side view illustrating a configuration of anembodiment of the conditioning unit 60 usable for the substrateprocessing apparatus disclosed in the present disclosure. As illustratedin FIG. 17A, the conditioning unit 60 includes a conditioning stage 60-2disposed so as to face the surface of the catalyst 31 on the catalystholding unit 30. The conditioning stage 60-2 can be configured to berotatable, scrollable, or the like by a motor or the like.

Further, the conditioning unit 60 includes a catalyst cleaning nozzle60-4 configured to supply the water and/or the chemical for cleaning thesurface of the catalyst 31. The cleaning nozzle 60-4 is connected to anot-illustrated supply source of the water and/or the chemical, arequired pipe and valve, and the like, and can supply desired fluid tothe catalyst 31. The conditioning unit 60 may include a plurality ofcatalyst cleaning nozzles 60-4, and can be configured to supply thewater and different kinds of chemicals from these nozzles, respectively.Alternatively, the conditioning unit 60 may be configured to be able tosupply the water and the different kinds of chemicals from the catalystcleaning nozzle 60-4 with use of the single catalyst cleaning nozzle60-4 by operating a valve and the like. In the embodiment illustrated inFIG. 17A, the cleaning nozzle 60-4 is disposed outside the conditioningstage 60-2.

FIG. 17B is a schematic side view illustrating another embodiment of theconditioning unit 60. In the embodiment illustrated in FIG. 17B, thecleaning nozzle 60-4 is disposed inside the conditioning stage 60-2.More specifically, the cleaning nozzle 60-4 is disposed on the surfaceof the conditioning stage 60-2. In the present embodiment, theconditioning stage 60-2 includes a passage 60-6 for supplying the waterand/or the chemical to the cleaning nozzle 60-4.

Providing the cleaning nozzle 60-4 to the conditioning unit 60, like theembodiment illustrated in FIGS. 17A and 17B, allows the conditioningunit 60 to remove the etching product that is adhered onto the catalyst31 while the substrate is processed, with use of the water and/or thechemical. As described above, the catalyst holding unit 30 is rotatable,and the conditioning unit 60 can remove a residue, such as the etchingproduct adhered on the catalyst 31, by spraying the water and/or thechemical onto the catalyst 31 while the catalyst holding unit 30 isrotated. In the embodiment illustrated in FIG. 17B, the cleaning nozzle60-4 is disposed inside the conditioning stage 60-2, which facilitatesthe even supply of the water and/or the chemical to the entire catalyst31 compared to disposing the cleaning nozzle 60-4 outside theconditioning stage 60-2, like the embodiment illustrated in FIG. 17A. Onthe other hand, the embodiment illustrated in FIG. 17A eliminates thenecessity of providing the passage 60-6 inside the conditioning stage60-2, and thus can simplify a layout of the pipe for supplying the waterand/the chemical. The cleaning of the catalyst 31 according to any ofthe embodiments illustrated in FIGS. 17A and 17B may be used incombination with another conditioning process that will be describedbelow. For example, the conditioning unit 60 may be configured to cleanthe catalyst 31 before the other conditioning process, and the cleanedcatalyst 31 may be subject to further conditioning. Alternatively, theconditioning unit 60 may be configured to clean catalyst 31 according toany of the embodiments illustrated in FIGS. 17A and 17B after the otherconditioning process, and remove a residue and the like generated whilethe catalyst 31 is conditioned, and the like. It is apparent that theconditioning unit 60 may clean the catalyst 31 according to any of theembodiments illustrated in FIGS. 17A and 17B both before and after theother conditioning process.

The conditioning unit 60 illustrated in each of FIGS. 17A and 17B can beconfigured to scrub and clean the catalyst 31 by being provided with thescrub cleaning unit 61 like the above-described scrub cleaning unit 61.

FIG. 18 is a schematic side view illustrating another embodiment of thecatalyst holding unit 30 and the conditioning unit 60. In the presentembodiment, the catalyst holding unit 30 includes an electrodeconfigured to be electrically connectable to the catalyst. Further, theconditioning unit 60 includes a regeneration electrode 60-12 disposed onthe conditioning stage 60-2. Further, in the present embodiment, theconditioning unit 60 can supply the water and/or the chemical onto theconditioning stage 60-2 via the passage 60-6 formed through theconditioning stage 60-2. In addition or alternatively, the conditioningunit 60 may be configured to supply the water and/or the chemical ontothe conditioning stage 60-2 via a processing liquid supply passage 30-40extending through the catalyst holding unit 30, as will be describedbelow.

In the embodiment illustrated in FIG. 18, the voltage is applied in sucha manner that the electrode connected to the catalyst 31 becomes apositive side and the regeneration electrode 60-12 disposed on theconditioning stage 60-2 becomes a negative side, by way of example. As aresult, the surface of the catalyst 31 can be electrolytically etchedvia the water and/or the chemical. Electrolytically etching the surfaceof the catalyst 31 can remove the surface of the catalyst 31deteriorated due to the adhesion of the etching residue and generationof an altered layer from the etching processing performed on thesubstrate, so that the surface of the catalyst 31 can be recovered backto the active status.

Further, conversely, the voltage can also be applied in such a mannerthat the electrode connected to the catalyst 31 becomes the negativeside and the regeneration electrode 60-12 disposed on the conditioningstage 60-2 becomes as the positive side. As a result, a reduction actioncan be caused on the surface of the catalyst 31 via the water and/or thechemical. For example, if the surface of the catalyst 31 is oxidized bythe etching processing performed on the substrate, oxides on the surfaceof the catalyst can be reduced with the aid of the reduction action, sothat the surface of the catalyst 31 can be recovered to the activestatus.

FIG. 19 is a schematic side view illustrating another embodiment of thecatalyst holding unit 30 and the conditioning unit 60. In the presentembodiment, the conditioning unit 60 also uses the scrub cleaningtogether with the above-described application of the voltage. In theembodiment illustrated in FIG. 19, the conditioning unit 60 includes thescrub member 61 on the regeneration electrode 60-12 as illustrated inFIG. 19. The scrub member 61 can be made of, for example, a porousliquid-penetrative material. As a specific example of the material, thescrub member 61 can be made of polyvinyl alcohol (PVA). Further, asimilar member to the polishing pad for use in the CMP apparatus may beused as the scrub member 61. In the present embodiment, the conditioningunit 60 also uses a physical action from the scrub cleaning in additionto an electric action from the application of the voltage, and thus canmore effectively condition the catalyst 31 than conditioning thecatalyst 31 with use of only one of them.

Further, an ion exchanger may be used as a modification of theembodiment illustrated in FIG. 18. The ion exchanger has a catalyticfunction for enhancing ionization of the water under an electric field,and enhances the ionization of the water upon application of a voltagewhen the catalyst 31 and the ion exchanger are located in proximity toor in contact with each other, thereby generating H+ ions and OH− ions.These H+ ions and OH− ions act on the surface of the catalyst 31, bywhich the surface of the catalyst 31 can be conditioned with the aid ofelectrolytic etching or can be conditioned with the aid of a reductionaction. Further, liquid used in this case may be water or a dilutechemical, which can reduce a use amount of the chemical.

FIG. 20 is a schematic side view illustrating another embodiment of thecatalyst holding unit 30 and the conditioning unit 60. In the presentembodiment, the conditioning stage 60-2 includes a wall 60-8 extendingvertically upwardly throughout the circumferentially entire outerperiphery. This wall 60-8 forms a liquid reservoir portion thattemporarily holds the water and/or the chemical while the conditioningof the catalyst 31 is in progress. The wall 60-8 can be configuredvariably in height. This configuration allows the water and/or thechemical to be kept by a variable amount, and to be discharged bylowering the wall 60-8 after an end of the conditioning of the catalyst31. Regarding the other structures, this embodiment can include anyfeature described in the embodiments illustrated in FIGS. 17 to 19, or aknown feature. In the present embodiment, the water and/or the chemicalcan be kept in the liquid reservoir portion while the conditioning ofthe catalyst 31 is in progress. As a result, the catalyst 31 can beefficiently conditioned, and the catalyst 31 can be conditioned with useof a reduced amount of the water and/or the chemical. Further, in theembodiment illustrated in FIG. 20, the conditioning unit 60 can beconfigured to keep the water and/or the chemical in the liquid reservoirportion, and condition the catalyst by emitting an ultrasonic wave tothe liquid in the liquid reservoir portion while the catalyst 31 isimmersed in the liquid. The emitted ultrasonic wave is preferably anultrasonic wave in the unit of kHz. In the present embodiment, theconditioning unit 60 can efficiently remove the residue adhered on thecatalyst 31 by emitting the ultrasonic wave.

FIG. 21 schematically illustrates the conditioning unit 60 as oneembodiment. In the embodiment illustrated in FIG. 21, the conditioningunit 60 includes a catalyst measurement sensor 60-10 for measuring thestatus of the surface of the catalyst 31.

As one embodiment, the catalyst measurement sensor 60-10 can be aresistance sensor that measures electric resistance of the catalyst 31.If the catalyst 31 is metal, an electric resistance value varies due toa change in the film thickness of the catalyst 31, the adhesion of theetching residue on the surface of the catalyst 31, and the generation ofthe altered layer constituted by oxides. Use of this variation allowsthe catalyst measurement sensor 60-10 to measure the status of thesurface of the catalyst 31.

As one embodiment, the catalyst measurement sensor 60-10 can be athickness sensor that measures the thickness of the catalyst. Forexample, if the catalyst is metal, the thickness of the catalyst can bemeasured by measurement of an eddy current flowing on the surface of thecatalyst 31. More specifically, a high-frequency current is applied to asensor coil disposed in proximity to the surface of the catalyst 31 togenerate the eddy current on the catalyst 31, thereby producing aninduction magnetic field on the electrically-conductive metallic filmformed on the catalyst 31. The eddy current generated there and asynthetic impedance calculated therefrom vary according to the thicknessof the metallic film of the catalyst 31, the adhesion of the etchingresidue on the surface of the catalyst 31, and the altered layerconstituted by the oxides, so that the thickness sensor 60-10 canmeasure the status of the catalyst 31 in a non-contact manner by usingthis variation.

As one embodiment, the catalyst measurement sensor 60-10 is an opticalsensor. Use of the optical sensor allows the catalyst measurement sensor60-10 to measure the status of the surface of the catalyst 31 in anon-contact manner by measuring a reflection intensity according to thechange in the film thickness if the catalyst 31 is a light transmissivematerial.

Generally, the catalyst is conditioned for the purpose of keeping thesurface of the catalyst in an optimal status. The insufficientlyconditioned catalyst makes it impossible to acquire a desired capabilityof etching the substrate to be processed due to the deterioration of theactive status of the catalyst surface. On the other hand, theexcessively conditioned catalyst leads to a shortened lifetime of thecatalyst. The use of the catalyst measurement sensor 60-10 to measurethe status of the surface of the catalyst, like the above-describedsensor, allows the conditioning unit 60 to acquire an appropriatecatalytic status with a minimum conditioning amount. For example, theconditioning unit 60 can detect an end point of the conditioning whilemeasuring the status of the catalyst with use of the catalystmeasurement sensor 60-10 as needed in the process of the conditioning ofthe catalyst 31. More specifically, the adhesion of the etching residueon the catalyst 31 or the generation of the altered layer constituted bythe oxides, if any, leads to an increase in the electric resistance ofthe surface of the catalyst 31. On the other hand, the electricresistance reduces as the catalyst 31 is being conditioned and thesurface of the catalyst 31 is being cleaned. Therefore, the conditioningunit 60 can determine the end point of the conditioning by using thecatalyst measurement sensor 60 of the type that measures theabove-described electric resistance or the above-described impedancefrom the eddy current. Alternatively, the conditioning unit 60 canmeasure the status of the catalyst with use of the catalyst measurementsensor 60-10 before conditioning the catalyst 31, and predetermine aparameter of the conditioning, such as a setting of the conditioning(for example, a time to be taken for the conditioning, a setting aboutthe application of the voltage, and a scrub setting such as a pressurewith which the scrum member 61 should contact the catalyst 31 and thenumber of times that the scrub member 61 should rotate), based on themeasured value. Alternatively, the conditioning unit 60 can alsoestimate the status of the catalyst 31 from a processing rate while thesubstrate is processed with use of a monitoring unit 480, which will bedescribed below, without use of the catalyst measurement sensor 60-10 todetermine the parameter of the conditioning. Further, the catalystmeasurement sensor 60-10 a also allows the conditioning unit 60 toacquire a signal corresponding to the film thickness of the catalyst 31,and determine a timing when the catalyst 31 should be replaced bymonitoring a reduction in the catalyst 31 due to wear.

Having described the conditioning to correct the deterioration of thesurface of the catalyst 31, the deterioration of the catalyst 31 can beeliminated or reduced even by another method than the above-describedconditioning especially with respect to the generation of the alteredlayer, such as the oxidation of the surface of the catalyst 31. Forexample, in one embodiment, the substrate processing apparatus 10 usesplatinum, nickel, iron, or chrome as the catalyst 31, and the catalystholding unit 30 includes the counter electrode electrically connectableto this metallic catalyst via the processing liquid. Metal having largerionization tendency than the metal of the catalyst 31 can be used forthis counter electrode. In this case, an electromotive force isgenerated between the two kinds of metal in a direction in whichelectrons move from the metal with smaller ionization tendency to themetal with larger ionization tendency while the wafer W is processed. Asa result, the electrode with larger ionization tendency ispreferentially oxidized, which reduces or prevents oxidation and/orhydroxylation of the catalyst 31, which is the metal with smallerionization tendency.

Further, in one embodiment, the conditioning unit 60 includes a gassupply nozzle for supplying gas to the surface of the catalyst 31. Anozzle configured similarly to the catalyst cleaning nozzle 60-4illustrated in FIG. 17A can be used as a specific configuration of thegas supply nozzle. Alternatively, a gas source for supplying dry air ornitrogen gas may be connected to the catalyst cleaning nozzle 60-4 so asto allow the catalyst cleaning nozzle 60-4 to be used as the gas supplynozzle. Generally, a metal surface is oxidized and/or hydroxylated dueto existence of water. Therefore, the oxidation and/or the hydroxylationof the catalyst 31 can be removed or reduced by injecting the dry air orthe nitrogen gas onto the surface of the catalyst 31 with use of the gassupply nozzle to dry the surface of the catalyst 31 while the etchingprocessing of the wafer W is stopped for a long time (for example, aninterval time period in lot processing of the wafer W).

The conditioning unit 60 may be configured to remove or reduce theoxidation and/or the hydroxylation of the catalyst 31 by applying thevoltage in such a manner that the electrode on the catalyst side becomesthe negative side and the regeneration electrode becomes the positiveside as described with reference to FIGS. 18 and 19 to thereby cause thereduction action on the surface of the catalyst 31, so as to remove orreduce the oxidation and/or the hydroxylation of the catalyst 31 duringthe interval time period in which the etching processing of the wafer Wis stopped.

Further, the substrate processing apparatus 10 may be used incombination with the CMP apparatus. This combined use allows thesubstrate processing apparatus 10 to flexibly process the semiconductormaterial on the substrate, thereby improving the processing capabilityas a whole. The order of the processing performed by the substrateprocessing apparatus 10 and the processing performed by the CMPapparatus varies depending on the material to be processed, so that atransfer route by the substrate transfer unit can be selectedappropriately according to a situation. For example, the substrateprocessing apparatus 10 can process the wafer W after the CMP apparatusprocesses the wafer W first, or the CMP apparatus processes can processthe wafer W after the substrate processing apparatus 10 processes thewafer W first.

B. Second Embodiment

FIG. 8 schematically illustrates a configuration of a substrateprocessing apparatus 110 as a second embodiment. In FIG. 8, similarcomponents to the components illustrated in FIG. 2 are identified by thesame reference numerals indicated in FIG. 2, and will not be describedbelow. The same applies to the other drawings. In the substrateprocessing apparatus 110 according to the present embodiment, asubstrate temperature control unit 121 is mounted in the substrateholding unit 120. The substrate temperature control unit 121 is, forexample, a heater, and is configured to control the temperature of thewafer W. The temperature of the wafer W is adjusted to a desiredtemperature by the substrate temperature control unit 121. The CAREmethod is chemical etching, so that the etching rate thereof depends onthe temperature of the substrate. According to this configuration, thesubstrate processing apparatus 110 can change the etching rate accordingto the temperature of the substrate. As a result, the substrateprocessing apparatus 110 can adjust the etching rate and the uniformity.In the present embodiment, a plurality of heaters may be arrangedconcentrically, and a temperature of each of the heaters may beadjusted. Alternatively, a single heater may be spirally laid in thesubstrate temperature control unit 121.

As an alternative configuration, the substrate processing apparatus 110may include a processing liquid temperature adjustment unit that adjustsa temperature of the processing liquid PL to a predetermined temperatureinstead of or in addition to the substrate temperature control unit 121.Alternatively, the catalyst holding unit 30 may include a catalysttemperature control mechanism that adjusts a temperature of the catalyst31 instead of or in addition to them. This configuration also allows thesubstrate processing apparatus 110 to adjust the etching rate byadjusting the temperature of the processing liquid. The temperature ofthe processing liquid PL may be adjusted to, for example, apredetermined temperature within a range of 10 degrees or higher and 60degrees or lower.

Further, the etching capability can be stabilized by applying thistemperature dependency, and for example, placing the substrateprocessing apparatus 110 in a constant-temperature bath to therebycontrol the temperature of the entire substrate processing apparatus110.

C. Third Embodiment

FIG. 9 schematically illustrates a configuration of a substrateprocessing apparatus 210 as a third embodiment. The substrate processingapparatus 210 includes a processing liquid supply unit 240 in place ofthe processing liquid supply unit 40, which is a difference from thefirst embodiment. In the present example, FIG. 9 illustrates a substrateholding unit 220 as including a clamp mechanism that clamps the frontsurface and the back surface of the wafer W. The processing liquidsupply unit 240 is fixed to the swing arm 50 at a position in thevicinity of the catalyst holding unit 30, preferably, at an upstreamportion in terms of the rotation of the wafer W, i.e., a position wherethe processing liquid supplied from the processing liquid supply unit240 can be efficiently supplied to the catalyst holding unit 30 due tothe rotation of the wafer W. Therefore, a supply port 241 is configuredto be moved together with the catalyst holding unit 30 to supply theprocessing liquid PL onto the processing target region of the wafer W.This configuration allows the processing liquid supply unit 240 toalways supply the fresh processing liquid PL to around the catalyst 31,resulting in the stabilization of the etching capability. Further, theprocessing liquid can be supplied to around the portion where thecatalyst 31 and the wafer W are in contact with each other regardless ofhow the swing arm 50 of the catalyst holding unit 30 swings, whichcontributes to a reduction in the use amount of the processing liquid.

D. Fourth Embodiment

FIG. 10 schematically illustrates a configuration of a substrateprocessing apparatus 310 as a fourth embodiment. The substrateprocessing apparatus 310 includes a processing liquid holding unit 270,which is a difference from the third embodiment. The processing liquidholding unit 270 has a box-like shape opening on a bottom side facingthe wafer W, and surrounds the catalyst holding unit 30 around thecatalyst holding unit 30. The processing liquid supply unit 240penetrates through the processing liquid holding unit 270, as a resultof which the supply port 241 is located inside an inner space 271 andthe processing liquid PL is supplied into the inner space 271. Aclearance is secured between the processing liquid holding unit 270 andthe wafer W so as to prevent the processing liquid holding unit 270 fromdamaging the wafer W by sliding on the wafer W. This clearance isextremely narrow, and the processing liquid PL supplied into the innerspace 271 is mostly held in the inner space 271. This configurationallows the processing liquid PL to be held almost only around thecatalyst 31, thereby succeeding in significantly reducing the use amountof the processing liquid PL. In the present embodiment, the clearance isformed between the processing liquid holding unit 270 and the wafer W,but the processing liquid holding unit 270 and the wafer W can be incontact with each other without damaging the wafer W by providing anelastic member, such as a sponge, between a surface of the processingliquid holding unit 270 that faces the wafer W.

FIG. 11 illustrates a modification of the substrate processing apparatus310 illustrated in FIG. 10. In this example, the substrate processingapparatus 310 further includes a processing liquid suction unit 242. Theprocessing liquid suction unit 242 penetrates through the processingliquid holding unit 270, as a result of which a suction port 243 islocated inside the inner space 271. In other words, the processingliquid suction unit 242 is in communication with the inner space 271. Asuction device (not illustrated), such as a pump, is connected to theprocessing liquid suction unit 242. The processing liquid PL held in theinner space 271 is sucked and removed by this processing liquid suctionunit 242. This configuration allows the processing liquid supply unit240 to always supply the fresh processing liquid PL onto the catalyst31, as a result of which the etching capability can be stabilized.

FIG. 29 is a schematic side cross-sectional view illustrating oneembodiment of the catalyst holding unit 30 usable for the substrateprocessing apparatus disclosed in the present disclosure. In thesubstrate processing apparatus 210 according to this embodiments, a pipeof the processing liquid supply unit 240 extends through a rotationalaxis of the swing arm 50 and the catalyst holding unit 30, and thecatalyst holding unit 30, and the processing liquid PL is supplied fromthe surface of the catalyst 31 that contacts the wafer W. Further, inthis embodiment, the catalyst 31 and the catalyst holding member 32 (forexample, the elastic member 32) include the processing liquid supplypassage 30-40 for supplying the processing liquid PL supplied via thecatalyst holding unit 30 to between the wafer W and the catalyst 31, anda supply port 30-42 for supplying the processing liquid is formed on thesurface of the catalyst 31. As described above, the delivery of theprocessing liquid PL in the plane of the catalyst 31 affects thedistribution of the etching rate in the plane of the catalyst in contactwith the wafer W. In the configuration in which the wafer W and thecatalyst holding unit 30 rotate, the rotation may fail to allow theprocessing liquid PL to be sufficiently delivered to the surface wherethe catalyst 31 and the wafer W are in contact with each other dependingon the condition of the number of rotations, if the processing liquid PLis supplied from outside the catalyst holding unit 30. In this case, theprocessing liquid PL may be unable to be sufficiently evenly introducedto between the wafer W and the catalyst 31. In the embodimentillustrated in FIG. 29, the processing liquid PL is supplied from insidethe region where the wafer W and the catalyst 31 are in contact witheach other, which allows the processing liquid PL to be evenlyintroduced to the region where the wafer W and the catalyst 31 are incontact with each other. Therefore, the uniformity of the etching ratecan be improved on the region where the wafer W and the catalyst 31 arein contact with each other. Further, the processing liquid PL can besupplied from inside the region where the catalyst 31 and the wafer Ware in contact with each other regardless of how the swing arm 50 of thecatalyst holding unit 30 swings, which contributes to a reduction in theuse amount of the processing liquid PL.

FIG. 30 is a schematic side cross-sectional view illustrating oneembodiment of the catalyst holding unit 30 usable for the substrateprocessing apparatus disclosed in the present disclosure. In theembodiment illustrated in FIG. 30, the catalyst holding unit 30 isconfigured in such a manner that the processing liquid PL is suppliedfrom a groove of the catalyst 31 via the pipe of the processing liquidsupply unit 240, the rotational axis of the swing arm 50 and thecatalyst holding unit 30, and the catalyst holding unit 30, similarly tothe embodiment illustrated in FIG. 29. In the embodiment illustrated inFIG. 30, the catalyst holding unit 30 includes, in the catalyst holdingmember 32, a buffer portion 30-44 in fluid communication with the pipeof the processing liquid PL inside the swing arm 50. Further, thecatalyst 31 and the catalyst holding member 32 include a plurality ofprocessing liquid supply passages 30-40 for supplying the processingliquid PL from the buffer portion 30-44 to between the wafer W and thecatalyst 31 via the groove of the catalyst 31. Then, a plurality ofsupply ports 30-42, which is used to supply the processing liquid ontothe surface of the catalyst 31, is formed on a bottom the groove. In theembodiment illustrated in FIG. 30, the processing liquid PL transmittedthrough the swing arm 50 is temporarily held in the buffer portion30-44, and is supplied from the buffer portion 30-44 to around theregion (the groove) where the wafer W and the catalyst 31 are in contactwith each other via the plurality of supply ports 30-42. In theembodiment illustrated in FIG. 30, the processing liquid PL is suppliedfrom the plurality of supply ports 30-42 formed on the surface of thecatalyst 31, which facilitates more even supply of the processing liquidPL than the embodiment illustrated in FIG. 29. Further, the embodimentillustrated in FIG. 29 can also realize further even supply of theprocessing liquid PL by providing the surface of the catalyst 31 with anappropriate groove usable for the processing liquid PL to pass through.

FIG. 39A is a schematic side cross-sectional view illustrating oneembodiment of the catalyst holding unit 30 usable for the substrateprocessing apparatus disclosed in the present disclosure. FIG. 39B is aplan view of the catalyst holding unit 30 illustrated in FIG. 39A asviewed from the catalyst 31. In the embodiment illustrated in FIG. 39A,the catalyst holding unit 30 is configured in such a manner that theprocessing liquid PL is supplied from the surface of the catalyst 31that contacts the wafer W via the pipe of the processing liquid supplyunit 240, the rotational axis of the swing arm 50 and the catalystholding unit 30, and the catalyst holding unit 30, similarly to theembodiment illustrated in FIG. 29A. Further, in the embodimentillustrated in FIG. 39A, the catalyst holding unit 30 includes anelastic member 32 d that forms a plurality of concentrically arrangedpressure chambers 33 d, and is configured to be able to independentlycontrol a pressure in each of the pressure chambers 33 d, similarly tothe embodiment illustrated in FIG. 7. In the embodiment illustrated inFIG. 39A, the processing liquid PL is supplied from a plurality ofprocessing liquid supply passages 30-40 extending through between theplurality of pressure chambers 33 d and their respective supply ports30-42. In the embodiment illustrated in FIG. 39B, four supply ports30-42 of the processing liquid are formed on the surface of the catalyst31. Further, in the embodiment illustrated in FIG. 39B, grooves as aconcentric circle pattern are formed on the surface of the catalyst 31.These grooves are formed so as to allow the processing liquid PL to flowin the plane of the wafer W between the catalyst 31 and the wafer W withthe catalyst 31 and the wafer W in contact with each other. The supplyports 30-42 of the processing liquid PL are desirably arranged in thesegrooves to efficiently distribute the processing liquid. As anotherembodiment, the number and the layout of the supply ports 30-42, and thegroove pattern may be arbitrarily set. In the embodiment illustrated inFIGS. 39A and 39B, the substrate holding unit 30 is configured to beable to adjust a flow amount of the processing liquid PL for each radialposition independently. For example, as illustrated in FIG. 39A, aflowmeter 30-41, and a valve 30-43 for adjusting the flow amount of theprocessing liquid can be provided to each of the processing liquidsupply passage 30-40. In the illustrated embodiment, the substrateholding unit 30 can be configured to supply the processing liquid byequal flow amounts via the processing liquid supply passages 30-40located at same radial positions, and supply the processing liquid bydifferent flow amounts via the processing liquid supply passages 30-40located at different radial positions. Further, although notillustrated, the substrate holding unit 30 may include a branch valve inthe processing liquid supply passage 30-40 and be configured to be ableto supply a plurality of different kinds of processing liquid via thesingle processing liquid supply passage 30-40.

FIG. 39C is a schematic side cross-sectional view illustrating oneembodiment of the catalyst holding unit 30 usable for the substrateprocessing apparatus disclosed in the present disclosure. FIG. 39D is aplan view of the catalyst holding unit 30 illustrated in FIG. 39C asviewed from the catalyst 31. In the embodiment illustrated in FIG. 39C,the catalyst holding unit 30 is configured to be able to supply aplurality of different kinds of processing liquid onto the surface ofthe catalyst 31 simultaneously, unlike the embodiment illustrated inFIG. 39A. FIG. 39C illustrates the catalyst holding unit 30 as beingcapable of supplying two kinds of processing liquid. However, as anotherembodiment, the substrate holding unit 30 may include a larger number ofprocessing liquid supply passages 30-40 and a larger number of variousvalves 30-43, and be configured to be able to supply a larger number ofkinds of processing liquid.

In the embodiments illustrated in FIGS. 39A to 39D, the pressure withwhich the catalyst 31 and the wafer W are in contact with each other canbe adjusted for each of the regions located at different radialpositions, and the amount by which the processing liquid PL is suppliedcan be also adjusted for each of the regions located at different radialpositions. Therefore, these embodiments allow the substrate processingapparatus to control the in-plane distribution of the contact pressureon the region where the wafer W and the catalyst 31 are in contact witheach other during the etching processing, thereby further improving theuniformity of the etching rate. Further, the substrate processingapparatus can supply the different kinds of processing liquid onto thesurface of the catalyst 31 simultaneously, whereby the configurations ofthe present embodiments can be effectively used for the process of thewafer W processing by various CARE methods.

E. Fifth Embodiment

FIG. 12 schematically illustrates a configuration of a substrateprocessing apparatus 410 as a fifth embodiment. The substrate processingapparatus 410 includes a monitoring unit 480, and a control unit 490also includes a parameter change unit 491, which are differences fromthe above-described embodiments. The monitoring unit 480 monitors thestatus of the etching processing performed on the processing targetregion of the wafer W. The monitoring unit 480 is configured to behorizontally movable to a specific position on the wafer W by anactuator. The present monitoring unit 480 may be fixed to the specificposition, but may be moved in the plane of the wafer W during theetching processing. If the monitoring unit 480 is movable in the planeof the wafer W, the monitoring unit 480 may be configured to be movableaccording to the movement of the catalyst holding unit 30. Thisconfiguration allows the monitoring unit 480 to detect a distribution ofthe status of the etching processing in the plan of the wafer W. Themonitoring unit 480 is configured differently depending on the materialof the processing target region. Further, if the processing targetregion is made of a plurality of materials, a plurality of monitoringunits may be used in combination. For example, if the polishing targetis a metallic film formed on the wafer W, the monitoring unit 480 may beconfigured as an eddy current monitoring unit. More specifically, themonitoring unit 480 applies a high-frequency current to a sensor coildisposed in proximity to the surface of the wafer W to generate an eddycurrent on the wafer W, thereby producing an induction magnetic field onthe electrically-conductive metallic film formed on the wafer W. Theeddy current generated at this time and a synthetic impedance calculatedtherefrom vary according to the thickness of the metallic film, so thatthe monitoring unit 480 can monitor the status of the etching processingwith use of this variation.

The monitoring unit 480 can have not only the above-describedconfiguration but also various configurations. For example, if apolishing target is a light transmissive material, such as an oxidizedfilm, the monitoring unit 480 may emit light toward the processingtarget region of the wafer W and detect light reflected therefrom. Morespecifically, the monitoring unit 480 receives refection light reflectedon the surface of the processing target region of the wafer W orreflected after being transmitted through the processing target layer ofthe wafer W. An intensity of this reflection light varies depending onthe film thickness of the processing target layer, so that themonitoring unit 480 can monitor the status of the etching processingbased on this variation.

Alternatively, if a processing target layer is a compound semiconductor(for example, GaN or SiC), the monitoring unit 480 may use at least oneof a photocurrent method, a photoluminescence optical method, and aRaman optical method. According to the photocurrent method, themonitoring unit 480 measures a value of a current flowing through aconductive wire connecting the wafer W and a metallic wiring laid in thesubstrate holding unit 20 when the surface of the wafer W is irradiatedwith excitation light, thereby measuring the etching amount of thesurface of the wafer W. According to the photoluminescence opticalmethod, the monitoring unit 480 measures photoluminescence lightdischarged from the surface of the wafer W when this surface isirradiated with excitation light, thereby measuring the etching amountof the surface of the wafer W. According to the Raman optical method,the monitoring unit 480 irradiates the surface of the wafer W withvisible monochromatic light to measure Raman light contained in lightreflected from this surface, thereby measuring the etching amount of thesurface of the wafer W.

Alternatively, the monitoring unit 480 may monitor the status of theetching processing based on a torque current of the driving unit whenthe substrate holding unit 220 and the catalyst holding unit 30 aremoved relative to each other. This configuration allows the monitoringunit 480 to monitor a friction status generated due to the contactbetween the semiconductor material of the substrate and the catalyst viathe torque current, thereby monitoring the etching status based on avariation in the torque current due to, for example, a change in theroughness status of the semiconductor material or an exposure of anothermaterial on the processing target surface.

Further, as one exemplary embodiment, the monitoring unit 480 may beconfigured as a vibration sensor included in the catalyst holding unit3. The monitoring unit 480 detects a vibration when the substrateholding unit 220 and the catalyst holding unit 30 are moved relative toeach other with use of the vibration sensor. The friction status betweenthe wafer W and the catalyst 31 varies if the roughness status of thewafer W changes or another material is exposed while the wafer W isprocessed, and the vibration status varies due to this variation in thefriction status. The monitoring unit 480 can detect the status of theprocessing performed on the wafer W by detecting this variation in thevibration with use of the vibration sensor.

The status of the etching processing monitored in this manner isreflected in the processing performed on the next wafer W in thesubstrate processing apparatus 410 by the parameter change unit 491.More specifically, the parameter change unit 491 changes a controlparameter regarding the condition of the etching processing to beperformed on the next wafer based on the status of the etchingprocessing monitored by the monitoring unit 480. For example, theparameter change unit 491 changes the control parameter based on adifference between a distribution of the thickness of the processingtarget layer acquired based on the result of the monitoring by themonitoring unit 480 and a predetermined target distribution of thethickness in such a manner that this difference reduces. Thisconfiguration allows the substrate processing apparatus 410 to feed backthe result of the monitoring by the monitoring unit 480, therebysucceeding in improving an etching performance of the processingperformed on the next wafer.

The control unit 490 may feed back the result of the monitoring by themonitoring unit 480 for the processing performed on the wafer Wcurrently in process. For example, the control unit 490 may change aparameter among conditions of the processing by the substrate processingapparatus 410 in the middle of the processing, in such a manner that thedifference between the distribution of the thickness of the processingtarget region acquired based on the result of the monitoring by themonitoring unit 480 and the predetermined target distribution of thethickness falls within a predetermined range (ideally, zero). The resultof the monitoring acquired by the monitoring unit 480 can be not onlyfed back for the above-described conditions of the processing but alsoused to function as an end point detection unit for detecting the endpoint of the polishing processing.

Further, the substrate processing apparatus 410 may include a thicknessmeasurement unit that measures the thickness of the wafer W after theprocessing, instead of the above-described monitoring unit 480. Thethickness measurement unit may be disposed outside the substrate holdingunit 220. The processed wafer W is transferred to the thicknessmeasurement unit, and is measured there in terms of the distribution ofthe thickness of the processing target layer thereof. A result of themeasurement by this thickness measurement unit can also be fed back forthe conditions of the processing to be performed on the next wafer W,similarly to the monitoring unit 480. More specifically, the controlunit 490 calculates a value of a difference between the result of thismeasurement and a target film thickness, and changes the condition ofthe processing to be performed on the wafer W so as to eliminate thisdifference. Further, in this case, the control unit 490 may function asa reprocessing control unit. The reprocessing control unit causes thesubstrate processing apparatus 410 to reprocess the wafer W, if theresult of the measurement by the thickness measurement unit does notsatisfy a predetermined target value, i.e., if the difference betweenthe distribution of the thickness of the processing target layeracquired by this thickness measurement unit and the predetermined targetdistribution of the thickness is larger than a reference value. If thedistribution as the difference value that requires the reprocessing iskept even within the circumference of the wafer but is uneven in theradial direction, the substrate processing apparatus 410 can reprocessthe wafer W by, for example, radially adjusting the speed at which theswing arm 50 swings while the wafer W is rotated. However, if thedistribution as the difference value is largely uneven in thecircumferential direction of the wafer, this method cannot be employed.In this case, the substrate processing apparatus 410 can reprocess thewafer W by, for example, specifying a position of a portion in the planeof the wafer W that should be reprocessed based on a notch, an orientalflat, or a laser marker of the wafer, and moving the substrate holdingunit 20 and the catalyst holding unit 30 in such a manner that thecatalyst 31 can contact this position. More specifically, the substrateprocessing system may include a detection unit that detects at least oneof the notch, the oriental flat, and the laser maker of the substrate,and a substrate position adjustment unit configured to rotate thesubstrate only b an arbitrary predetermined angle so that the notch, theoriental flat, or the laser marker of the substrate is located at apredetermined position. The substrate processing apparatus 410 canreprocess the wafer W by setting the substrate by the substrate transferunit in such a manner that the above-described mark or the like detectedby the detection unit is located at the predetermined position of thesubstrate holding unit 20, and angularly rotating the substrate holdingunit 20 based on this predetermined position in such a manner that theportion required to be reprocessed is located on the track along whichthe swing arm 50 of the catalyst holding unit 30 swings. Thisconfiguration allows the substrate processing apparatus 410 to reprocessa desired portion required to be reprocessed, resulting in succeeding inacquiring a satisfactory quality of the etching processing. Further, thesubstrate processing apparatus 410 may include a thickness measurementunit that measures the thickness of the wafer W before the processing.The thickness measurement unit may be disposed outside the substrateholding unit 220. Further, if the substrate processing apparatus 410includes a CMP processing unit, the substrate processing apparatus 410may use a film thickness measurement unit built in the CMP processingunit. The substrate processing apparatus 410 can acquire the targetdistribution of the thickness regardless of a variation in an initialstatus among wafers, by feeding back the result of measuring thedistribution of the thickness of the processing target layer of thewafer before the processing for the condition of the processing to beperformed on the wafer W.

F. Sixth Embodiment

FIG. 13 schematically illustrates a configuration of a substrateprocessing apparatus 510 as a sixth embodiment. The substrate processingapparatus 510 includes a potential adjustment unit 580, which is adifference from the above-described embodiments. The potentialadjustment unit 580 includes a reference electrode 581 and a powersource 582. The catalyst 31 and the reference electrode 581 areconnected to each other via the power source 582. The referenceelectrode 581 extends to a region where the reference electrode 581 cancontact the processing liquid PL. Therefore, the catalyst 31 and thereference electrode 581 are electrochemically connected to each othervia the processing liquid PL. The power source 582 is controlled in sucha manner that a potential on the surface of the catalyst 31 decreaseswithin a predetermined range. This configuration allows the substrateprocessing apparatus 510 to prevent adhesion of a factor that wouldblock the activity of the surface of the catalyst 31 while the wafer Wis processed by the etching processing, thereby resulting in succeedingin maintaining the active status of the surface of the catalyst.Further, etching rate of the wafer W varies according to a voltageapplied to the catalyst depending on the material of the processingtarget region of the wafer W, the kind of the processing liquid PL, andthe kind of the catalyst, so that the substrate processing apparatus 510can efficiently process the wafer W. If the substrate processingapparatus 510 includes the processing liquid holding unit 270, thereference electrode 581 may be disposed in the processing liquid holdingunit 270 in such a manner that the reference electrode 581 is at leastpartially in contact with the processing liquid.

FIG. 31 is a cross-sectional view schematically illustrating aconfiguration of the catalyst holding unit 30 as one embodiment. In theembodiment illustrated in FIG. 31, the counter electrode 30-50 isdisposed outside the catalyst holding unit 32. A voltage can be appliedto between the catalyst 31 and the counter electrode 30-50 by anexternal power source. Therefore, the catalyst 31 and the counterelectrode 30-50 are electrically connected to each other via theprocessing liquid PL. Further, the catalyst holding unit 30 illustratedin FIG. 31 includes the wall 30-52 formed outside the elastic member 32and the catalyst 31 so as to surround them with a space generatedtherebetween. A processing liquid holding portion, which holds theprocessing liquid PL, is defined by the wall 30-52 with the catalyst 31and the wafer W in contact with each other. In the embodimentillustrated in FIG. 31, the processing liquid PL is supplied from thesupply port 30-42 on the surface of the catalyst 31 via the inside ofthe catalyst holding unit 30, so that the processing liquid PL can beeffectively held in the processing liquid holding unit. In theembodiment illustrated in FIG. 31, the counter electrode 30-50 isdisposed in the processing liquid holding unit, which facilitatesestablishment of an electric connection between the catalyst 31 and thecounter electrode 30-50 via the processing liquid PL.

FIG. 32 is a cross-sectional view schematically illustrating aconfiguration of the catalyst holding unit 30 as one embodiment. FIG. 33is a plan view of the catalyst holding unit 30 illustrated in FIG. 32 asviewed from the catalyst 31. In the embodiment illustrated in FIGS. 32and 33, counter electrodes 30-50 are embedded in the catalyst holdingmember 32, and are configured to be exposed from the catalyst holdingmember 32 according to a regular pattern. Exposing the counterelectrodes 30-50 from the surface of the catalyst 31 according to theregular pattern contributes to further evening out the distribution ofthe voltage of the catalyst 31, and as a result thereof, contributes tofurther evening out the etching rate in the plane of the wafer W that isin contact with the catalyst 31.

In the CARE method, the etching rate can be adjusted by the applicationof the voltage to between the catalyst 31 and the counter electrode.Therefore, it is desirable to apply an electrode that maximizes theetching rate of the wafer W, to between the catalyst 31 and the counterelectrode 30-50 regarding the voltage between the catalyst 31 and thecounter electrode 30-50, from the point of view of the rate at which thewafer W is processed. On the other hand, the surface of the catalyst 31may be oxidized and/or hydroxylated while the wafer W is processed,depending on the kind of the catalyst 31 and the kind of the processingliquid PL. In this case, the substrate processing apparatus can recoverthe active status of the surface of the catalyst by conditioning thesurface of the catalyst as described above during the interval timeperiod between the processing performed on the wafer W and theprocessing to be performed on the new wafer W. On the other hand, if thecatalyst 31 is such a catalyst that the active status of the surface ofthe catalyst is recoverable by the reduction action, the substrateprocessing apparatus can reduce the surface of the catalyst byintermittently applying a potential on the reduction side to thecatalyst 31 while the wafer W is processed. In other words, the surfaceof the catalyst can be conditioned to maintain the active status whilethe wafer W is processed. FIGS. 34 and 35 each illustrate a pattern ofthe potential applied to the catalyst 31. In each of FIGS. 34 and 35, ahorizontal axis represents the processing time, and a vertical axisrepresents the potential of the catalyst 31 with respect to the counterelectrode. As described above, applying a negative potential to thecatalyst side can cause the reduction action on the catalyst 31. In theexamples illustrated in FIGS. 34 and 35, the rate at which the wafer Wis etched is assumed to increase by application of a positive potentialor zero potential to the catalyst 31, and the substrate processingapparatus can cause the reduction action on the catalyst 31 to keep thecatalyst 31 in the active status by intermittently applying the negativepotential to the catalyst 31. Applying the negative potential to thecatalyst 31 leads to a temporary reduction in the etching rate, butapplying a potential having a rectangular wave, like the exampleillustrated in FIG. 34, realizes an adjustment of the etching rate andthe maintenance of the active status of the catalyst surface.

FIG. 36 is a plan view schematically illustrating a layout pattern ofthe catalyst 31 of the catalyst holding unit 30 as one embodiment. Asillustrated in FIG. 36, the catalyst 31 is divided into a plurality ofregions in each of the radial direction and the circumferentialdirection. In the embodiment illustrated in FIG. 36, the catalyst 31 isconfigured in such a manner that a voltage can be applied to betweeneach of the regions of the catalyst 31 and the counter electrode 30-50independently of one another. The processing method involving swingingthe circular catalyst 31 on the wafer W, like the present embodiment,may lead to a difficulty in controlling the etching amount on the edgeside of the wafer W so as to keep the etching amount even. One possiblemethod for etching the edge side of the wafer W while keeping theetching amount even with use of this processing method is to cause thecatalyst 31 to overhang from the wafer W. However, causing the catalyst31 to overhang from the wafer W leads to a reduction in the area overwhich the wafer W and the catalyst 31 are in contact with each other.Therefore, attempting to acquire a constant etching rate whilemaintaining the uniformity in the plane of the wafer W results in a lossof efficiency of the processing. Further, a sufficient effect may beunable to be achieved by the method that causes the catalyst 31 tooverhang from the wafer W, attempting to improve the uniformity of theetching rate of the wafer. Therefore, the catalyst 31 is divided intothe plurality of regions in each of the radial direction and thecircumferential direction, and the voltage is applied to each of theregions independently of each other, like the embodiment illustrated inFIG. 36. This configuration can improve the uniformity of the etchingrate of the wafer W. More specifically, the catalyst holding unit 30 isprovided with a rotational position sensor and a position sensor fordetecting the rotational position of the catalyst and the position ofthe swing arm 50. The substrate processing apparatus detects apositional relationship between each of the regions of the catalyst andthe wafer W with use of these sensors, and changes the voltage to beapplied to each of the regions of the catalyst 31 so as to be able toacquire a constant processing speed. As described above, applying thevoltage to the catalyst may cause a change in the etching rate (refer toFIGS. 42 to 44). Therefore, the substrate processing apparatus canchange the etching rate for each of the regions by changing thepotential to be applied to each of the regions of the catalyst 31. Forexample, FIG. 37 illustrates the catalyst holding unit 31 with thecatalyst 31 rotated while being in contact with the wafer W. Thesubstrate processing apparatus can control the voltage so as to applythe voltage in such a manner that a low potential is provided to theregion of the catalyst 31 located on an inner side of the wafer W whilea high potential is provided to the region of the catalyst 31 located onan outer side of the wafer W while the wafer W is processed. In thismanner, the substrate processing apparatus can improve uniformity of theprocessing performed on the wafer W without the catalyst 31 overhangingfrom the wafer W or with the catalyst 31 minimally overhanging from thewafer W, by dynamically controlling the potential to be applied to eachof the regions of the catalyst 31.

FIG. 38 illustrates one embodiment for realizing a constant etching ratewhile maintaining the uniformity of the processing performed on thewafer W. FIG. 38 is a plan view illustrating a pattern according towhich the catalyst of the catalyst holding unit 30 is divided, similarlyto FIG. 36. In the embodiment illustrated in FIG. 38, the catalyst 31includes the catalyst holding member 32 (for example, the elastic member32) divided into a plurality of pieces in each of the radial directionand the circumferential direction. The catalyst 31 is held on thesurface of the catalyst holding member 32. In the embodiment illustratedin FIG. 38, each of the pieces of the catalyst holding member 32 is madeof the elastic film 32 d such as the elastic film 32 d illustrated inFIG. 7, and the pressure chamber 33 d is formed inside them. Thepressure chamber 33 d is configured to be able to control the pressurewith which the processing target region of the wafer W and the catalyst31 are in contact with each other independently of one another, by thecontrol of the pressure of the fluid (for example, air or nitrogen gas)supplied from the fluid source into the pressure chamber 33D. In theembodiment illustrated in FIG. 38, the substrate processing apparatusincludes the rotational position sensor and the positional sensor fordetecting the rotational position of the catalyst and the position ofthe swing arm 50, similarly to the embodiment illustrated in FIG. 36.Further, in the embodiment illustrated in FIG. 38, the catalyst holdingmember 32 may be configured in such a manner that each of the regions ofthe catalyst holding member 32 includes a pressure sensor 30-45. Thesubstrate processing apparatus can measure the pressure with which eachof the regions of the catalyst 31 and the wafer W are in contact witheach other, with use of the pressure sensor 30-45. The substrateprocessing apparatus detects a positional relationship between each ofthe regions of the catalyst and the wafer W with use of these sensors,and adjusts the pressure to be applied to each of the regions of thecatalyst 31 so as to be able to acquire a constant etching rate. Forexample, the substrate processing apparatus can control the pressure soas to apply the pressure in such a manner that a low pressure isgenerated at the region of the catalyst 31 located on the inner side ofthe wafer W while a high pressure is generated at the region of thecatalyst 31 located on the outer side of the wafer W while the wafer Wis processed, similarly to the example illustrated in FIG. 37. In thismanner, the substrate processing apparatus can improve the uniformity ofthe processing performed on the wafer W without the catalyst 31overhanging from the wafer W or with the catalyst 31 minimallyoverhanging from the wafer W, by dynamically controlling the pressure tobe applied to each of the regions of the catalyst 31. As the mechanismfor applying the pressure to each of the regions of the catalyst 31, apiezoelectric element can be disposed on each of the regions of thecatalyst holding member 32, instead of the method that supplies thefluid to the above-described pressure chamber 33 d. In this case, thesubstrate processing apparatus can dynamically adjust the pressure withwhich the catalyst 31 and the wafer W are in contact with each other foreach of the regions by controlling a voltage to be supplied to thepiezoelectric element.

G. Seventh Embodiment

In the substrate processing apparatus 10 as a seventh embodiment, thecatalyst 31 includes two kinds or more of individual catalysts. As analternative embodiment, the catalyst 31 may be a mixture (for example,an alloy) or a compound (for example, an intermetallic compound)containing two kinds of catalysts. According to this configuration, thesubstrate processing apparatus 10 can etch the wafer W evenly or at adesired selection ratio, if the surface to be polished is made of two ormore different kinds of materials according to the region of the waferW. For example, if a Cu layer and an SiO.sub.2 layer are formed on afirst region and a second region of the wafer W, respectively, thecatalyst 31 may include a region containing an acid solid catalyst forCu and a region containing platinum for SiO.sub.2. In this case, ozonewater for Cu and acid for SiO.sub.2 may be used as the processing liquidPL. Alternatively, if a III-V series metallic (for example, GaAs) layerand an SiO.sub.2 layer are formed on the first region and the secondregion of the wafer W, respectively, the catalyst 31 may include aregion containing iron for the III-V series metal and a regioncontaining platinum or nickel for SiO.sub.2. In this case, ozone waterfor the III-V series metal and acid for SiO.sub.2 may be used as theprocessing liquid PL.

In this case, the substrate processing apparatus 10 may include aplurality of catalyst holding units 30. Each of the plurality ofcatalyst holding units 30 may hold a different kind of catalyst from oneanother. For example, a first catalyst holding unit 30 may hold thecatalyst 31 containing an acid solid catalyst, and a second catalystholding unit 30 may hold the catalyst containing platinum. In this case,the two catalyst holding units 30 can be configured to scan only on thelayer of the corresponding material on the wafer W. According to thisconfiguration, the substrates processing apparatus 10 can furtherefficiently process the wafer W by sequentially using the first catalystholding unit 30 and the second catalyst holding unit 30 and supplyingthe processing liquid PL according to the catalyst holding unit 30 inuse. As a result, the substrates processing apparatus 10 can improve theprocessing capability per unit time.

As an alternative embodiment, in the fourth embodiment, different kindsof processing liquid PL may be sequentially supplied. According to thisconfiguration, the substrate processing apparatus can etch the wafer Wevenly or at a desired selection ratio, if the processing target surfaceis made of two or more different kinds of materials according to theregion of the wafer W. For example, the catalyst holding unit 30 mayhold a catalyst containing platinum. Then, the substrate processingapparatus 10 may first supply a neutral solution or a solutioncontaining Ga ions as the processing liquid PL to etch the III-V seriesmetallic layer of the wafer W, and then supply acid as the processingliquid PL to etch the SiO.sub.2 layer of the wafer W.

As an another alternative embodiment, the substrate processing apparatus10 may include a plurality of catalyst holding units 30 holding the samekind of catalyst. In this case, the plurality of catalyst holding units30 may be used simultaneously. According to this configuration, thesubstrate processing apparatus 10 can improve the processing capabilityper unit time.

FIG. 49 is a schematic side view illustrating a configuration of thesubstrate processing apparatus as one embodiment. In the embodimentillustrated in FIG. 49, the substrate holding unit 20 and the catalystholding unit 30 are arranged in such a manner that the plane of thewafer W and the plane of the catalyst 31 extend in the verticaldirection. It is desirable that the processing liquid supply unit 40 isdisposed so as to be located above the catalyst holding unit 30 inconsideration of the gravity. For example, the catalyst holding unit 30and the processing liquid supply unit 240, like the units 30 and 240described with reference to FIGS. 9 and 10, are mounted on the sameswing arm 50, and the processing liquid supply unit 240 is disposed soas to be constantly located above the catalyst holding unit 30, whichallows the processing liquid PL to be efficiently introduced intobetween the catalyst 31 and the wafer W with the aid of the gravity inaddition to the rotation of the substrate holding unit 20. Further, evenif the etching residue is produced while the wafer W is processed by theetching processing, the etching residue is efficiently discharged withthe aid of the gravity without remaining between the catalyst 31 and thewafer W. As a modification thereof, the plane of the wafer W and theplane of the catalyst 31 do not necessarily have to extend vertically,and may be arranged so as to be inclined with respect to the horizontalplane that can still cause a natural flow of the processing liquid dueto the gravity, as illustrated in FIG. 50. Regarding the other features,the present embodiment can include an arbitrary feature of the otherembodiments disclosed in the present disclosure, or a known feature.

H. Eighth Embodiment

FIG. 14 schematically illustrates a configuration of a substrateprocessing system 601 as an eighth embodiment. The substrate processingsystem 601 is a CMP unit, and includes a swing arm 602, a CMP processingunit 603, a substrate processing unit 610, and a substrate feed unit609. The CMP processing unit 603 includes a substrate holding head 604(corresponding to the top ring of the conventional CMP apparatus)mounted on a distal end of the swing arm, a polishing table 605 with apolishing pad attached thereto, a dresser 606 configured swingably bythe swing arm 607, and a slurry supply nozzle 608. The substrate holdinghead 604 holds the wafer W placed on the substrate feed unit 609 by, forexample, the vacuum suction mechanism. At this time, the surface of thewafer W to be polished is placed face down, and is pressed against thepolishing table 605, by which the CMP processing is performed.

The waver W held by the substrate holding head 604 can be located at afirst position P1, where the wafer W is etched by the CARE method, and asecond position P2, where the wafer W is polished by the CMP apparatus,with use of a swinging motion of the swing arm 602. The wafer Wprocessed by the CMP processing at the second position P2 is placed onthe first position P1 while being kept held by the substrate holdinghead 604. At this time, the surface of the wafer W to be polishedremains face-down. In the present embodiment, the order of theprocessing procedures performed on the wafer W is set in such a mannerthat the wafer W is processed by CMP and CARE in this order, but is notlimited thereto depending on the material of the processing targetregion. The wafer W may be processed by CARE and CMP in this order, ormay be processed only by CARE or CMP.

The substrate processing unit 610 basically has a similar configurationto the above-described substrate processing apparatus 10, and performssimilar processing to the above-described substrate processing apparatus10. However, the surface of the wafer W to be polished is placed facedown, so that the catalyst holding unit 630 mounted on the distal end ofthe swing arm 650 is moved vertically upwardly to carry the catalystinto contact with the surface to be polished. According thereto, theprocessing liquid supply unit 640 supplies the processing liquid PL tothe bottom surface of the wafer W as the PL. In this case, theprocessing liquid supply unit 640 may be a spray device that sprays theprocessing liquid PL vertically upwardly. Alternatively, the processingliquid holding unit 270 illustrated in FIG. 11 may be mounted upsidedown, and the processing liquid PL may be supplied inside thisprocessing liquid holding unit 270.

In this manner, the substrate processing unit 610 may be realized as aunit integrated with the CMP processing unit 603. According to thisconfiguration, the processing performed by the substrate processingapparatus 610 and the processing performed by the CMP processing unit603 can share the operation of holding the wafer W, which contributes toa reduction in the processing time as a whole.

FIG. 64 is a plan view schematically illustrating a configuration of thesubstrate processing system as one embodiment. The illustrated substrateprocessing system includes a CARE module that performs the etchingprocessing on the substrate, a plurality of cleaning modules forcleaning the substrate, a deposition chamber, and a mechanism fortransferring the substrate, like the apparatuses described in thepresent disclosure. In this system configuration, the wafer W to beprocessed is loaded into a load port. The wafer loaded in the load portis subject to the deposition processing in the deposition chamber afterbeing transferred by the wafer transfer mechanism, such as a robot.Examples of the deposition apparatus usable here include the chemicalvapor deposition (CVD) apparatus, the sputtering apparatus, the platingapparatus, and the coater apparatus. The wafer W processed by thedeposition processing is transferred to a cleaning module 1 by the wafertransfer mechanism, such as the robot, and is cleaned therein. Afterthat, the wafer W is transferred to a planarization module, i.e., theCARE processing module like the apparatuses described in the presentdisclosure, and is subject to the planarization processing. After that,the wafer W is conveyed to a cleaning module 2 and a cleaning module 3,and is cleaned therein. The wafer W processed by the cleaning processingis transferred to a drying module, and is dried therein. The dried waferW is returned back to the load port. The present system allows the waferW to be processed by the deposition processing and the planarizationprocessing by a single system, thereby succeeding in efficientutilization of an area where the system is set up. Further, the transfermechanism is configured to be able to transfer the substrate in the wetstatus and the substrate in the dry status separately from each other.

FIG. 45 is a schematic plan view illustrating a configuration of thesubstrate processing apparatus as one embodiment. The configurationillustrated in FIG. 45 includes three substrate holding units 20, threecatalyst holding units 30, and three conditioning units 60. The threecatalyst holding units 30 are coupled to one another via the swing arm50. The swing arm 50 is swingable in the plane of the wafer W on thesubstrate holding unit 20, and is also movable to arbitrary ones of thesubstrate holding units 20 and the condition units 60 by rotating arounda rotational center of the swing arm 50. As other configurations of thesubstrate processing apparatus, the substrate processing apparatus canhave an arbitrary feature of the embodiments disclosed in the presentdisclosure, or a known feature. The three catalyst holding units 30 canhold the same kind of catalyst 31, and can also be configured to holdthe different kinds of catalysts 31. Further, the illustrated catalystholding units 30 are illustrated as having identical dimensions, but mayhave different dimensions as another embodiment. The catalyst holdingunits 30 having the different dimensions allow the substrate processingapparatus to more precisely process the wafer W, thereby succeeding inthe improvement of the in-plane evenness. The substrate processingapparatus according to the embodiment illustrated in FIG. 45 can processa plurality of wafers W simultaneously, thereby improving theproductivity. Further, the substrate processing apparatus according tothe embodiment illustrated in FIG. 45 can divide a process requiring along processing time into a plurality of stages, thereby efficientlyperforming different processing by each of the catalyst holding units30. Further, the substrate processing apparatus according to theembodiment illustrated in FIG. 45 can simultaneously perform a pluralityof processing procedures in a process requiring a plurality of catalystsby using the catalyst holding units 30 holding the different kinds ofcatalysts 31.

FIG. 51 is a schematic plan view illustrating a configuration of thesubstrate processing apparatus as one embodiment. The substrateprocessing apparatus according to the embodiment illustrated in FIG. 51includes two catalyst holding units 30, two conditioning units 60, and asingle substrate holding unit 20. The two catalyst holding units 30extend along the plane where the wafer W is mounted on the substrateholding unit 20 with a rotational center 51 serving as a supportingpoint thereof, and are swingable along the plane where the wafer W ismounted. In the illustrated embodiment, the catalyst holding members 32of the two catalyst holding units 30 have identical dimensions. As thenot-illustrated other configurations of the substrate processingapparatus according to the embodiment illustrated in FIG. 51, anddetailed configurations of the catalyst holding units 30, theconditioning units 60, and the substrate holding units 20, the substrateprocessing apparatus can include an arbitrary feature of the otherembodiments disclosed in the present disclosure, or a known feature. Thesubstrate processing apparatus illustrated in FIG. 51 includes the twocatalyst holding units 30. Therefore, when processing the wafer W withuse of one of the catalyst holding units 30, the present substrateprocessing apparatus can condition the other of the catalyst holdingunits 30. As a result, the present substrate processing apparatus canimprove the productivity of processing the wafer compared to thesubstrate processing apparatus including the single catalyst holdingunit 30. Further, the present substrate processing apparatus canincrease the area where the catalyst and the wafer W are in contact witheach other by processing the wafer W with use of the two catalystholding units 30, thereby improving the etching rate of the wafer W.Further, the present substrate processing apparatus improvescontrollability of processing the wafer by changing the pressure withwhich the wafer W is in contact with the catalyst 31, the speed at whichthe catalyst holding unit 30 swings, and the voltage to be applied tothe catalyst at each of the catalyst holding units 30. Further, thepresent substrate processing apparatus can also perform differentprocessing procedures simultaneously by causing the two catalyst holdingunits 30 to hold different kinds of catalyst 31.

As another embodiment, the number of catalyst holding units 30 is notlimited to two, but the substrate processing apparatus can include anarbitrary number of catalyst holding units 30. Further, the dimensionmay be changed for each of the catalyst holding units 30. For example,the substrate processing apparatus can use the catalyst holding unit 30large in dimension and the catalyst holding unit 30 small in dimension.The catalyst holding unit 30 small in dimension can especially providehigh controllability of the etching rate of the wafer W in theprocessing performed on the wafer W, so that the use of the catalystholding units 30 having different dimensions can contribute to thefurther improvement of the uniformity in the plane of the wafer. As aspecific example, the substrate processing apparatus can process thecentral portion of the wafer W with use of the catalyst holding unit 30large in dimension, and can process the edge of the wafer W and thevicinity thereof with use of the catalyst holding unit 30 small indimension.

Further, as another embodiment, a plurality of catalyst holding members32 can also be mounted on the single swing arm 50. In this case, therespective sizes of the catalyst holding units 32 may be different fromone another or may be the same as one another. For example, thesubstrate processing apparatus can also be configured in such a mannerthat the single swing arm 50 is provided with the catalyst holding unit30 large in dimension, and the catalyst holding units 30 small indimension disposed on both sides of the catalyst holding unit 30 largein dimension so as to sandwich the catalyst holding unit 30 large indimension Further, the catalysts held on the different catalyst holdingunits 32 may be the same as one another or may be different from oneanother. As a modification of the embodiment illustrated in FIG. 51, oneof the catalyst holding units 30 may be replaced with the cleaning unitfor cleaning the wafer W. In this case, a sponge material for cleaningcan be used instead of the catalyst holding member 32. In this case, thewafer W can be cleaned without being transferred to another locationbefore or after being processed.

Further, as a modification of the embodiment illustrated in FIG. 51, apolishing pad for performing the processing according to theconventional CMP may be used instead of one of the catalyst holdingunits 30. In this case, the substrate processing apparatus can improvethe rate at which the wafer W is processed by performing the CMPprocessing before and/or after the CARE processing. Further, the presentsubstrate processing apparatus can be effectively used for theplanarization of the wafer containing a dissimilar interface.

FIG. 53 is a perspective view schematically illustrating a configurationof the substrate processing apparatus as one embodiment. The substrateprocessing apparatus according to the embodiment illustrated in FIG. 53includes a plurality of catalyst holding units 30 and a single substrateholding unit 20. In the embodiment illustrated in FIG. 53, the substrateholding unit 20 is configured to be able to rotate the wafer W placed onthe substrate holding unit 20, similarly to the other embodiments. Inthe embodiment illustrated in FIG. 53, the catalyst holding units 30 areembodied as a large number of relatively small catalyst holding units 30enough to almost entirely cover the surface of the wafer W. Althoughbeing not illustrated in detail in FIG. 53, each of the catalyst holdingunits 30 can be configured similarly to the other embodiments disclosedin the present disclosure. For example, as one example, each of thecatalyst holding units 30 can be configured to be able to supply theprocessing liquid PL from the surface of the catalyst 31 to the plane ofthe wafer W. Further, each of the catalyst holding units 30 can beconfigured to be mounted on the single head 30-74 (refer to FIG. 31),which is not illustrated in FIG. 53. This single head 30-74 can berotatably configured. Alternatively, the single head 30-74 may benon-rotatably configured, and the individual catalyst holding units 30may be rotatably configured. Alternatively, the individual catalystholding units 30 may be configured rotatably together with the rotationof the single head 30-74. Further, the single head 30-74 can beconfigured movably in the direction in the plane of the wafer W by, forexample, the arm 50, which is not illustrated in FIG. 53. Further, eachof the catalyst holding units 30 can also be configured to be able toindividually adjust the pressure with which the catalyst is in contactwith the wafer W with use of, for example, the pressure chamber 33(refer to FIGS. 3 and 7) and/or an individual elevating mechanism ofeach of the catalyst holding units 30. For example, the catalyst holdingunits 30 may be grouped into a plurality of regions in the radialdirection of the wafer W, and configured to individually adjust thepressure with which the catalyst is in contact with the wafer W for eachof the regions.

I. Ninth Embodiment

FIG. 15 schematically illustrates a configuration of the substrateprocessing apparatus 710 as a ninth embodiment. Further, FIG. 16 is across-sectional view of the substrate processing apparatus 710. Thesubstrate processing apparatus 710 includes a cylindrically formedcatalyst holding unit 730, a substrate holding unit 739, and aprocessing liquid supply unit 740. Further, although not illustrated,the substrate processing apparatus 710 includes a conditioning unit anda monitoring unit similarly to the other embodiments, as necessary. Thecatalyst holding unit 730 includes a first catalyst holding unit 730 aand a second catalyst holding unit 730 b. The catalyst holding unitincludes a cylindrical core member 731 having one end connected to arotational driving unit and the other end connected to a chemical supplyline, a cylindrical elastic member 732 disposed around the core member,and a catalyst 733 formed on a surface of the elastic member 732. In thepresent embodiment, the first catalyst holding unit 730 a and the secondcatalyst holding unit 730 b are arranged along a straight line, andperform a horizontal movement to a predetermined position on the waferW, a vertical motion into a contact with the wafer W, and a rotationalmotion driven by the rotational driving unit as motions thereof. Thevertical motion is carried out by a method using an air cylinder or aball screw, which also serves to adjust the pressure with which thecatalyst is in contact with the wafer W in addition to the verticalmotion. Further, regarding the rotational motion, the first catalystholding unit 730 a and the second catalyst holding unit 730 b areconfigured rotatably in opposite directions from each other. Further,the substrate holding unit 739 may employ any of the suction platemethod, the roller chuck method, and the clamp method, like theabove-described examples, but is assumed to employ the suction platemethod in the present embodiment. Further, the processing liquid supplyunit 740 also includes catalyst holding unit internal supply ports 741in addition to the above-described supply from outside the wafer W.Especially, the catalyst holding unit internal supply ports 741 areconnected to a cylindrical portion provide in the core member 731through an elastic member, and a plurality of catalyst holding unitinternal supply ports 741 are arranged along the direction in which thecatalyst holding unit 730 extends.

In this substrate processing apparatus 710, the catalyst holding unit730 contacts the wafer W with a predetermined contact pressure afterbeing horizontally moved to the predetermined position of the wafer Wheld on the substrate holding unit 730. At this time, the wafer W andthe catalyst holding unit 730 may simultaneously start the rotationalmotions. The holing unit 730 a and the second catalyst holding unit 730b rotate in the opposite directions from each other, and further rotatein directions for cancelling out relative speeds with respect to thedirection in which the wafer W rotates. Further, the supply of theprocessing liquid may also be simultaneously started from the processingliquid supply units 740 and 741. According to this configuration, thesubstrate processing apparatus 710 can reduce a difference between therelative speed between the first catalyst holding unit 730 a and thewafer W, and the relative speed between the second catalyst holding unit730 b and the wafer W, and as a result thereof, can reduce a damage thatthe surface of the wafer W would incur due to the friction.

FIG. 52 schematically illustrates a configuration of the substrateprocessing apparatus 710 as one embodiment. The embodiment illustratedin FIG. 52 includes cylindrically formed catalyst holding units 730,similarly to the embodiment illustrated in FIGS. 15 and 16. Thesubstrate processing apparatus according to the second embodimentillustrated in FIG. 52 includes four sets of seven catalyst holdingunits 730 a to 730 f. In the embodiment illustrated in FIG. 52, each ofthe catalyst holding units 730 a to 703 f and the other features can beconfigured similarly to the embodiment described with reference to FIGS.15 and 16. In the embodiment illustrated in FIG. 52, each of thecatalyst holding units 730 a to 730 f passively rotates according to therotation of the wafer W similarly to the embodiment illustrated in FIGS.15 and 16, whereby the substrate processing apparatus 710 can reduce thedamage that would be incurred by the catalyst holding units 730 and thedetachment from the catalyst holding units 730 due to the frictionbetween each of the catalyst holding units 730 a to 730 f and the waferW. Especially in the embodiment illustrated in FIG. 52, the substrateprocessing apparatus 710 includes the plurality of catalyst holdingunits 730 a to 730 f independently rotatable in the radial direction ofthe wafer W, so that each of the catalyst holding units 730 a to 730 fcan passively rotate according to the distribution of the speed variablealong the radial direction of the wafer W, which can further reduce thedamage that would be incurred by the catalyst holding units 730 and thedetachment from the catalyst holding units 730 due to the frictionbetween the wafer W and the catalyst holding units 730.

In the embodiment illustrated in FIG. 52, among at least several sets inthe sets of the catalyst holding units 730 a to 730 f, each of thecatalyst holding units 730 a to 730 f may be arranged so as to belocated at positions different from one another in the radial directionof the wafer W. Arranging them in this manner allows grooves or spacesbetween the catalyst holding units 730 a to 730 f to be laid out indifferent manners with respect to the radial direction of the wafer Wamong the sets of the catalyst holding units 730 a to 730 f, which canreduce occurrence of unevenness of the etching amount due to the patternin which the catalyst holding units 730 a to 730 f are laid out duringthe processing of the wafer W. Further, in the embodiment illustrated inFIG. 52, the catalyst holding units 730 a to 730 f may be configured tohold the same catalysts among them or may be configured in such a mannerthat at least some of the catalyst holding units 730 a to 730 f holddifferent kinds of catalysts. Further, the catalyst holding units 730 ato 730 f may be configured to contact the wafer W with equal contactpressures, or may be configured to be controlled independently of oneanother to contact the wafer W with different contact pressures.

Having described aspects of the present invention based on severalembodiments, the above-described embodiments of the invention areintended only to facilitate the understanding of the present invention,and are not intended to limit the present invention thereto. It isapparent that the present invention can be modified and improved withoutdeparting from the gist of the present invention, and equivalentsthereof are also included in the present invention. Further, thecomponents described in the claims and the specification of the presentapplication can be arbitrarily combined or omitted within a range thatcan solve at least a part of the above-described problems or achieve atleast a part of the advantageous effects.

REFERENCE SIGNS LIST

-   -   10 substrate processing apparatus    -   20 substrate holding unit    -   20-4 extension portion    -   20-6 vacuum suction plate    -   20-8 vacuum line    -   20-10 suction hole    -   21 wall    -   30 catalyst holding unit    -   30-10 tilt sensor    -   30-18 air cylinder mechanism    -   30-32 gimbal mechanism    -   30-40 processing liquid supply passage    -   30-42 supply port    -   30-44 buffer portion    -   30-48 support member    -   30-49 catalyst electrode    -   30-50 counter electrode    -   30-51 inlet passage    -   30-52 wall    -   30-53 outlet passage    -   30-55 piezoelectric element    -   30-70 disk holder portion    -   30-72 catalyzer disk portion    -   30-74 head    -   30-76 contact probe    -   31 catalyst    -   32 catalyst holding member (elastic member)    -   32-6 Peltier element    -   33 pressure chamber    -   34 a support frame    -   35 a pressure adjustment portion    -   36 b bore    -   37 c groove    -   40 processing liquid supply unit    -   50 swing arm    -   51-1 shaft    -   50-2 cover    -   50-12 air cylinder    -   50-14 load cell    -   50-15 PID controller    -   51 rotational center    -   60 conditioning unit    -   60-2 conditioning stage    -   60-6 passage    -   60-8 wall    -   60-10 catalyst measurement sensor    -   60-12 regeneration electrode    -   61 scrub cleaning unit    -   62 cleaning liquid supply unit    -   90 control unit    -   110 substrate processing apparatus    -   120 substrate holding unit    -   121 substrate temperature control unit    -   210 substrate processing apparatus    -   220 substrate holding unit    -   240 processing liquid supply unit    -   241 supply port    -   242 processing liquid suction unit    -   243 suction port    -   270 processing liquid holding unit    -   271 internal space    -   310 substrate processing apparatus    -   410 substrate processing apparatus    -   480 monitoring unit    -   490 control unit    -   491 parameter change unit    -   510 substrate processing apparatus    -   580 potential adjustment unit    -   581 reference electrode    -   582 power source    -   601 substrate processing system    -   602 swing arm    -   604 substrate holding head    -   605 polishing table    -   606 dresser    -   607 swing arm    -   608 slurry supply nozzle    -   609 substrate feed unit    -   610 substrate processing unit    -   630 catalyst holding unit    -   640 processing liquid supply unit    -   650 swing arm    -   710 substrate processing apparatus    -   730 catalyst holding unit    -   730 a first catalyst holding unit    -   730 b second catalyst holding unit    -   731 core member    -   732 elastic member    -   733 catalyst    -   739 substrate holding unit    -   704 processing liquid supply unit    -   741 catalyst holding unit internal supply port    -   W wafer    -   PL processing liquid

What is claimed:
 1. A substrate processing apparatus for processing aprocessing target region of a substrate by bringing the substrate and acatalyst into contact with each other in the presence of processingliquid, the substrate processing apparatus comprising: a substrateholding unit configured to hold the substrate; a catalyst holding unitconfigured to hold the catalyst; and a conditioning unit configured tocondition a surface of the catalyst, the conditioning unit disposedoutside the substrate holding unit, a swing arm to which the catalystholding unit is attached, the swing arm configured to move the catalystholding unit between the substrate holding unit and the conditioningunit.
 2. The substrate processing apparatus according to claim 1,wherein the conditioning unit includes a scrub cleaning unit configuredto scrub and clean the surface of the catalyst.
 3. The substrateprocessing apparatus according to claim 1, wherein the conditioning unitincludes a chemical supply unit configured to supply a chemical forremoving an etching product adhered on the surface of the catalyst. 4.The substrate processing apparatus according to claim 1, wherein theconditioning unit includes an electrolytic regeneration unit configuredto remove the etching product on the surface of the catalyst with use ofan electrolytic action, and wherein the electrolytic regeneration unitincludes a regeneration electrode configured to be electricallyconnectable to the catalyst, and is configured to remove the etchingproduct adhered on the surface of the catalyst with use of theelectrolytic action by applying a voltage to between the catalyst andthe regeneration electrode.
 5. The substrate processing apparatusaccording to claim 1, wherein the conditioning unit includes a platingregeneration unit configured to regenerate the catalyst by plating thecatalyst with a regeneration catalyst prepared from the same kind ofcatalyst as the catalyst, and wherein the plating regeneration unitincludes a regeneration electrode configured to be electricallyconnectable to the catalyst, and is configured to regenerate thecatalyst by plating the catalyst with the regeneration catalyst byapplying a voltage to between the catalyst and the regenerationelectrode with the catalyst immersed in liquid containing theregeneration catalyst.
 6. The substrate processing apparatus accordingto claim 1, wherein the conditioning unit includes a conditioning stagedisposed so as to face the surface of the catalyst.
 7. The substrateprocessing apparatus according to claim 6, further comprising a catalystcleaning nozzle configured to supply water and/or a chemical forcleaning the surface of the catalyst to the surface of the catalyst. 8.The substrate processing apparatus according to claim 7, wherein thecatalyst cleaning nozzle is disposed outside the conditioning stage. 9.The substrate processing apparatus according to claim 7, wherein thecatalyst cleaning nozzle is disposed inside the conditioning stage, andwherein the conditioning stage includes a passage for passing the waterand/or the chemical into the conditioning stage, the passage being influid communication with the catalyst cleaning nozzle.
 10. The substrateprocessing apparatus according to claim 6, wherein the conditioning unitincludes a scrub member disposed on the conditioning stage for cleaningthe surface of the catalyst.
 11. The substrate processing apparatusaccording to claim 6, further comprising; an electrode configured to beelectrically connectable to the catalyst; a regeneration electrodedisposed on the conditioning stage; and a power source configured toapply a voltage to between the electrode and the regeneration electrode.12. The substrate processing apparatus according to claim 11, whereinthe substrate processing apparatus is configured to electrolyticallyetch the surface of the catalyst by applying the voltage in such amanner that the electrode on the catalyst side becomes a positive sideand the regeneration electrode becomes a negative side.
 13. Thesubstrate processing apparatus according to claim 11, wherein thesubstrate processing apparatus is configured to reduce an oxide on thesurface of the catalyst by applying the voltage in such a manner thatthe electrode on the catalyst side becomes a negative side and theregeneration electrode becomes a positive side.
 14. The substrateprocessing apparatus according to claim 11, further comprising an ionexchanger provided on the regeneration electrode, wherein the substrateprocessing apparatus is configured to apply the voltage with thecatalyst and the ion exchanger located in proximity to or in contactwith each other.
 15. The substrate processing apparatus according toclaim 6, wherein the conditioning stage includes a liquid reservoirportion configured to be able to keep liquid on the conditioning stage.16. The substrate processing apparatus according to claim 15, furthercomprising an ultrasonic wave generator configured to emit an ultrasonicwave to the liquid kept in the liquid reservoir portion.
 17. Thesubstrate processing apparatus according to claim 6, wherein theconditioning stage is rotatably configured.
 18. The substrate processingapparatus according to claim 6, further comprising a catalystmeasurement sensor for measuring a status of the surface of thecatalyst.
 19. The substrate processing apparatus according to claim 18,wherein the catalyst measurement sensor includes at least one of (i) aresistance sensor configured to measure electric resistance of thecatalyst, (ii) a thickness sensor configured to measure the thickness ofthe catalyst, and (iii) an optical sensor.
 20. The substrate processingapparatus according to claim 1, wherein the catalyst includes metal, andwherein the substrate processing apparatus includes an electrodeelectrically connectable to the metal of the catalyst, the electrodeincluding a metal having larger ionization tendency than the metal ofthe catalyst.
 21. The substrate processing apparatus according to claim1, further comprising a gas supply nozzle for supplying gas to thesurface of the catalyst.
 22. A method for processing a processing targetregion of a substrate by bringing the substrate and a catalyst intocontact with each other in the presence of processing liquid, the methodcomprising: supplying the processing liquid to the processing targetregion of the substrate; bringing the catalyst into contact with theprocessing target region of the substrate; moving the substrate and thecatalyst relative to each other with the substrate and the catalyst keptin contact with each other; cleaning the substrate with a chemical;cleaning the substrate with water; and conditioning a surface of thecatalyst while cleaning the substrate with the chemical or the water,wherein the conditioning includes moving the catalyst to a conditioningunit disposed outside the substrate by swinging a swing arm configuredto move the catalyst.